Three Phase PSD 36 IdAVM = 35 A

Rectifier Bridges VRRM = 800-1800 V

Preliminary Data Sheet

VRSM VRRM Type

V V
800 800 PSD 36/08 ~
1200 1200 PSD 36/12 ~
1400
1600
1400
1600
PSD 36/14
PSD 36/16
~
1800 1800 PSD 36/18

Symbol Test Conditions Maximum Ratings Features

IdAVM TC = 62°C, module 35 A • Package with ¼” fast-on terminals
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 550 A • Isolation voltage 3000 V∼
VR = 0 t = 8.3 ms (60 Hz), sine 600 A • Planar glasspassivated chips
TVJ = TVJM t = 10 ms (50 Hz), sine 500 A • Blocking voltage up to 1800 V
VR = 0 t = 8.3 ms (60 Hz), sine 550 A • Low forward voltage drop
2
∫ i dt TVJ = 45°C t = 10 ms (50 Hz), sine 1520
2
A s • UL registered E 148688
2
VR = 0 t = 8.3 ms (60 Hz), sine 1520 A s
2
Applications
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A s • Supplies for DC power equipment
2
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A s • Input rectifiers for PWM inverter
TVJ -40 ... + 150 °C • Battery DC power supplies
TVJM 150 °C • Field supply for DC motors
Tstg -40 ... + 150 °C
Advantages
VISOL 50/60 HZ, RMS t = 1 min 2500 V∼
• Easy to mount with one screw
IISOL ≤ 1 mA t=1s 3000 V∼
• Space and weight savings
Md Mounting torque (M5) 2 Nm
• Improved temperature and power
(10-32 UNF) 18 lb. in cycling capability
Weight typ. 22 g
Package, style and outline
Dimensions in mm (1mm = 0.0394”)

Symbol Test Conditions Characteristic Value

IR VR = VRRM TVJ = 25°C ≤ 0.3 mA
VR = VRRM TVJ = TVJM ≤ 2.0 mA
VF IF = 150 A TVJ = 25°C ≤ 1.7 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 7.4 mΩ
RthJC per diode; DC current 7.5 K/W
per module 1.25 K/W
RthJK per diode; DC current 8.4 K/W
per module 1.4 K/W
dS Creeping distance on surface 12.7 mm
dA Creeping distance in air 9.4 mm
2
a Max. allowable acceleration 50 m/s

POWERSEM GmbH, Walperdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 PSD 36

4
200 IF(OV) 10
------
IFSM 2
1:TVJ= 150°C IFSM (A) As
[A]
2:TVJ= 25°C TVJ=45°C TVJ=150°C
1.6 480 500
150

1.4

1.2 3
100 10 TVJ=45°C
TVJ=150°C
1
0 VRRM
50 0.8
1/2 VRRM
IF 1 0.6 1 VRRM
2
0
2
10
0.5 1 1.5 2 2.5 0.4 1 2 4 6 10
VF[V] 100 101 t[ms] 102 103 t [ms]

2
Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 ∫i dt versus time
voltage drop per diode per diode IFSM: Crest value. (1-10ms) per diode (or thyristor)
t: duration

80 60 { EMBED CorelDraw.Grafik.8 }
[W] PSD 36N TC
65
0.41 0.1 = RTHCA [K/W]
70 70
0.72 75

60 80
85
90
50 1.35
95
100
40 105
110
2.6
30 115
120
DC
125
20 sin.180°
6.35 130
rec.120° 135
10 rec.60° 140
PVTOT rec.30° 145
0 °C
150
10 30 0 50 100 150
IFAVM [A] Tamb [K]

Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature at case temperature

{ EMBED CorelDraw.Grafik.8 }

Fig. 6 Transient thermal impedance per diode (or thyristor),

calculated

POWERSEM GmbH, Walperdorfer Str. 53  2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20