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Questions and Answer

Exam practicequestions

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Tarisai Doro
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So. Rf Sul 78% 14.42 300+ TOP RADIO RECEIVERS Que... x ° Oo < : engineeringinterviewquestions.com 24. When a receiver has good blocking performance, this means that A. it does not suffer from double-spotting B. its image frequency rejection is poor C. itis unaffected by AGC derived from nearby transmissions D. its detector suffers from burnout ANSWER: B 25. An AM receiver uses a diode detector for demodulation. This enables it satisfactorily to receive A. single-sideband, suppressed-carrier B. single-sideband, reduced-carrier Cc. ISB D. Single-sideband, full-carrier ANSWER: D RADIO RECEIVERS COMMUNICATION Questions and Answers :: I WILL UPDATE REMAINING QUEST AS SOON AS EARLY —> KEEP IN TOUCH So. Rf Sul 78% 14.42 x 300+ TOP RADIO RECEIVERS Que... Q «e . engineeringinterviewquestions.com 22. One of the following cannot be used to demodulate SSB: A. Product detector B. Diode Balance modulator C. Bipolar transistor balanced modulator D. Complete phase-shift generator ANSWER: C 23. Indicate the false statement. Noting that no carrier is transmitter with J3E, we see that A. the receiver cannot use a phase comparator for AFC B. adjacent-channel rejection is more difficult C. production of AGC is a rather complicated process D. the transmission is not compatible with A3E ANSWER: B 24. When a receiver has good blocking So. Rf Sul 78% 14.42 300+ TOP RADIO RECEIVERS Que... Q «e : . x engineeringinterviewquestions.com 20. If the intermediate frequency is very high (indicate false statement) A. image frequency rejection is very good B. the local oscillator need not be extremely stable C. the selectivity will be poor D. tracking will be improved ANSWER: D 21. A low ratio of the ac to the dc load impedance of a diode detector results in A. diagonal clipping B. poor AGC operation C. negative-peak clipping D. poor AF response ANSWER: C 22. One of the following cannot be used to demodulate SSB: A. Product detector So. Rf Sul 78% 14.42 300+ TOP RADIO RECEIVERS Que... . x HH < : engineeringinterviewquestions.com ANSWER: A 18. Three-point tracking is achieved with A. variable selectivity B. the padder capacitor C. double spotting D. double conversion ANSWER: B 19. The local oscillator of a broadcast receiver is tuned to a frequency higher than the incoming frequency A. to help the image frequency rejection B. to permit easier tracking C. because otherwise an intermediate frequency could not be produced D. to allow adequate frequency coverage without switching ANSWER: D 20. If the intermediate frequency is ve) high (indicate false statement) So. Rf Sul 78% 14.42 300+ TOP RADIO RECEIVERS Que... ° x HH < : engineeringinterviewquestions.com ANSWER: C 16. One of the main functions of the RF amplifier in a superheterodyne receiver is to A. provide improved tracking B. permit better adjacent-channel rejection C. increase the tuning range of the receiver D. improve the rejection of the image frequency ANSWER: D 17. A receiver has poor IF selectivity. It will therefore also have poor A. blocking B. double-spotting C. diversion reception D. sensitivity ANSWER: A 18. Three-point tracking is achieved with So. Rf Sul 78% 14.42 300+ TOP RADIO RECEIVERS Que... ° x HH < : engineeringinterviewquestions.com ANSWER: B 14. Indicate the false statement. The superheterodyne receiver replaced the TRF receiver because the latter suffered from A. gain variation over the frequency coverage range B. insufficient gain and sensitivity C. inadequate selectivity at high frequencies D. instability ANSWER: B 15. The image frequency ofa superheterodyne receiver A. is created within the receiver itself B. is due to insufficient adjacent channel rejection C. is not rejected be the IF tuned circuits D. is independent of the frequency to which the receiver is tuned ANSWER: C So. Rs Sl 78% 14.42 300+ TOP RADIO RECEIVERS Que... ° x HH < : engineeringinterviewquestions.com ANSWER: A 12. Indicate which of the following circuits could not demodulate SSB: A. Balance modulator B. Product modulator C. BFO D. Phase discriminator ANSWER: D 13. If a FET is used as the first AF amplifier ina transistor receiver, this will have the effect of A. improving the effectiveness of the AGC B. reducing the effect of negative-peak clipping c. reducing the effect of noise at low modulation depths D. improving the selectivity of the receiver ANSWER: B So. Rs Sl 78% 14.42 x 300+ TOP RADIO RECEIVERS Que... Q «e . engineeringinterviewquestions.com 10. The controlled oscillator synthesizer is sometimes preferred over the direct one because A. itis asimpler piece of equipment B. its frequency stability is better C. it does not require crystal oscillator D. it is relatively free of spurious frequency ANSWER: D 11. The frequency generated by each decade ina direct frequency synthesizer is much higher than the frequency shown; this is done to A. reduce the spurious frequency problem B. increase the frequency stability of the synthesizer C. reduce the number of decades D. reduce the number of crystals required ANSWER: A 12. Indicate which of the following u(t) conld not demoadiilate SCR: On -- Sell 78% 14.41 300+ TOP RADIO RECEIVERS Que... ° x HH < : engineeringinterviewquestions.com ANSWER: A 9. Indicate the false statement in connection with communications receivers. A. The noise limiter cuts off the receiver’s output during a noise pulse. B. A product demodulator could be used for the reception of Morse code. C. Double conversion is used to improve image rejection D. Variable sensitivity is used to eliminate selective fading ANSWER: D 10. The controlled oscillator synthesizer is sometimes preferred over the direct one because A. itis asimpler piece of equipment B. its frequency stability is better C. it does not require crystal oscillator D. itis relatively free of spurious wrea{4) BON: ME Sul 78% 14.41 300+ TOP RADIO RECEIVERS Que... Q «e . x engineeringinterviewquestions.com 7. Ina ratio detector A. the linearity is worse than in phase discriminator B. stabilization against signal strength variations is provided C. the output is twice that obtainable froma similar phase discriminator D. the circuit is the same as ina discriminator, except that the diodes are reversed ANSWER: A 8. The typical squelch circuit cuts off A. an audio amplifier when the carrier is absent B. RF interference when the signal is weak c. An IF amplifier when the AGC is maximum D. An IF amplifier when the AGC is minimum ANSWER: A BON: ME Sul 78% 14.41 300+ TOP RADIO RECEIVERS Que... xX «@ Hh < : engineeringinterviewquestions.com ANSWER: B 5. To prevent overloading of the IF amplifier ina receiver, one should use A. squelch B, variable sensitivity Cc. variable selectivity D. double conversion ANSWER: B 6. A superheterodyne receiver with an IF of 450 kHz is tuned toa signal at 1200 kHz. The image frequency is A. 750 kHz B. 900 kHz C. 1650 kHz D. 2100 kHz ANSWER: D 7. Ina ratio detector On -- Sell 78% 14.41 300+ TOP RADIO RECEIVERS Que... Q «e : . x engineeringinterviewquestions.com ANSWER: A 3. Ina radio receiver with simple AGC A. an increase in signal strength produces more AGC B. the audio stage gain is normally controlled by the AGC C. the faster the AGC time constant the more accurate the output D. the highest AGC voltage is produced ANSWER: A 4. Ina broadcast superheterodyne receiver, the A. local oscillator operates below the signal frequency B. mixer input must be tuned to the signal frequency C. local oscillator frequency is normally double the IF D. RF amplifier normally works at 455 above the carrier frequency ON a RE Sl 78% 14.41 300+ TOP RADIO RECEIVERS Que... engineeringinterviewquestions.com Q With the increase in temperature, the concentration of charge carriers increases resulting in increase in conductivity of semiconductors. The conductivity of metal decreases with the increase in temperature. 22. Why temperature coefficient of resistance of a semiconductor is le la BOM: ar all 87% Hf 13:59 300+ TOP SEMICONDUCTORS - P... x «ar OH «< engineeringinterviewquestions.com 19. Define diffusion current ina semiconductor. The diffusion of charge carriers is a result of a gradient of carrier concentration (i.e., the difference of carrier concentration from one region to another). In this case concentrations of charge carriers (either electrons or holes ) tend to distribute themselves uniformly throughout the semiconductor crystal. This movement continues until all carriers are evenly distributed throughout the material. This type of movement of charge carriers is called diffusion current. 20. Define drift current ina semiconductor. The steady flow of electrons in one direction caused by applied electric field constitutes an electric current, called the drift current. 21. Define what happens to the conductivity of semiconductor with rise in temperature? Compare with the BOM: 9 Full 87% 13.59 300+ TOP SEMICONDUCTORS - P... x «ar OH «< engineeringinterviewquestions.com 17. Define what do you mean by drift velocity and mobility of a free electron? The average velocity of an electron is known as drift velocity whereas mobility of an electron is defined as the drift velocity per unit electric field. 18. Define mobility of a carrier. Show that the mobility constant of electron is larger than that of a hole. Mobility is defined as the average particle drift velocity per unit electric field. The mobility of electrons is more than that of holes because the probability of an electron having the energy required to move to an empty state n the conduction band is much greater than the probability of an electron having the energy required to move to the empty state in valence band. The mobility of electron is about double that of a hole. 19. Nefine diffusion current ina BOM: ar all 87% Hf 13:59 300+ TOP SEMICONDUCTORS - P... Q «e engineeringinterviewquestions.com x 15. In which bands do the movement of electrons and holes take place? Free electrons move in valence band while holes in valence band. 16. Define what is the mechanism by which conduction takes place inside the semiconductor? Conduction occurs in any given material when an applied electric field causes electrons to move ina desired direction within the material. This may be due to one or both of two processes, electron motion and hole transfer. In case of former process, free electrons in the conduction band move under the influence of the applied electric field. Hole transfer involves electrons which are still attached to the atoms i.e. those in valence band. 17. Define what do you mean by drift velocity and mobility of a free electy ML. 2. nd ee ei Pe nd ee BOM: ar all 87% H 13:58 300+ TOP SEMICONDUCTORS - P... x «ar OH «< engineeringinterviewquestions.com 13. Define what is the main factor for controlling the thermal generation and recombination? Temperature, because with the increase in the temperature, concentrations of free electrons and holes increase and the rate of recombination is proportional to the product of concentration of free electrons and holes and also the rate of production of electron-hole pairs (thermal generation) increases with the rise in temperature. 14. Define mean life of a carrier. The amount of time between the creation and disappearance of a free electron is called the life time. It varies from a few nanoseconds to several microseconds depending how perfect the crystal is and other factors. 15. In which bands do the movement electrons and holes take place? (4) BOM: ar all 87% H 13:58 300+ TOP SEMICONDUCTORS - P... Q «e engineeringinterviewquestions.com x 12. Why does a pure semiconductor behave like an insulator at absolute zero temperature? For a pure semiconductor at a temperature of absolute zero (-273.150C)the valence band is usually full and there are may be no electron in the conduction band and it is difficult to provide additional energy required for lifting electron from valence band to conduction band by applying electric field. Hence the conductivity of a pure semiconductor at absolute zero temperature is zero and it behaves like an insulator. 13. Define what is the main factor for controlling the thermal generation and recombination? Temperature, because with the increase in the temperature, concentrations of free electrons and holes increase and the rate of recombination is proportional to the product of concentration of free electr and holes and also the rate of production 0 BOM: All 87% OB 13:58 300+ TOP SEMICONDUCTORS - P... Q «e . x engineeringinterviewquestions.com 11. Which of the two semiconductor materials Si or Ge has larger conductivity at room temperature? Why? Since energy required in transferring electrons from valence band to conduction band is more in case of Si than that in case of germanium , the conductivity of Ge will be more than that of Si at room temperature. Online BSc, MSc or PhD 90% of Students studying with Unicaf couldn't afford a Degree before Unicaf University Contact us > 12. Why does a pure semiconductor behave like an insulator at absolute On --. Bull 87% HB 13:58 300+ TOP SEMICONDUCTORS - P... x «ar OH «< engineeringinterviewquestions.com 9. Define what is intrinsic semiconductor 2 An intrinsic semiconductor is one which is made of the semiconductor material in the extremely pure form (impurity content not exceeding one part in 100 million parts of semiconductors). 10. Why silicon and germanium are the two widely used semiconductor materials? Because the energy required to release an electron from their valence band (i.e. to break their covalent bonds ) is very small (1.12eV for Si and 0.72eV for Ge). 11. Which of the two semiconductor materials Si or Ge has larger conductivity at room temperature? Why? Since energy required in transferring electrons from valence band to conan) band is more in case of Si than that in ¢ af cearmanium the conductivity of Ce will aN©-. @r all 87% HW 13:58 300+ TOP SEMICONDUCTORS - P... Q «e engineeringinterviewquestions.com x of electrons. 7. Define a hole in a semiconductor. When an energy is supplied to a semiconductor a valence electron is lifted to a higher energy level. The departing electron leaves a vacancy in the valence band. The vacancy is called a hole. Thus, a vacancy left in the valence band because of lifting of an electron from the valence band to conduction band is known as a hole. 8. Define what is hole current? The movement of the hole (positively charged vacancy in the valence band) from positive terminal of the supply to negative terminal through semiconductor constitutes hole current. 9. Define what is intrinsic semiconductor 2 An intrinsic semiconductor is one wni(A) made of the semiconductor material in the aNO-- Ball 87% fl 13:57 300+ TOP SEMICONDUCTORS - P... x a engineeringinterviewquestions.com Q The outermost shell of an atom is called valence shell and the electrons in this shell are called valence electrons. Formation of energy bands occur owing to overlapping of energy levels of these valence electrons in valence shells. With the decrease in interatomic distance between the atoms ina crystal, the energy levels of electrons i outermost shells of atoms overlap to (A) energy bands. aNO-- @e all 87% fl 13:57 x engineeringinterviewquestions.com 300+ TOP SEMICONDUCTORS - P... Q «e : J - - J Questions and Answers pdf SEMICONDUCTORS ~— PN JUNCTION Theory Questions :- 1. What is Fermi level? The maximum energy that an electron ina metal has at the absolute zero temperature is called the Fermi level of energy. 2. What is the basis for classifying (4) material as a conductor, semiconductor, aNO-- Ar all 87% ff 13.57 x engineeringinterviewquestions.com 300+ TOP SEMICONDUCTORS - P... Q «e PN JUNCTION Theory Questions and Answers pdf SEMICONDUCTORS — PN JUNCTION Theory Questions :- 1. What is Fermi level? The maximum energy that an electronina metal has at the absolute zero temper is called the Fermi level of energy. BNO-. Beall 87% 13:56 300+ TOP SEMICONDUCTORS - P... Q «e engineeringinterviewquestions.com x Z. What Is the basis tor Classitying a material as a conductor, semiconductor, or a dielectric? Define what is the conductivity of perfect dielectric? Conductors possess high conductivity whereas the characteristic property of insulating materials (or dielectrics) is poor conductivity. Semiconductors occupy an intermediate position between conductors and insulators. Though there is no rigid line separating the conductors from semiconductors and semiconductors from insulators, but still according to resistivity the materials of resistivity of the order from 10-8 to 10-3 , 10-13 to 106 and 106 to 1018 ohm-meters may be classified as conductors, semiconductors and dielectrics respectively. Another classification is based on temperature coefficient of resistivity. Metals have positive temperature coefficient of resistivity. Semiconductors have small negative temperature coefficient of resistivity and insulators have large negative temperature coefficient of aNO-- @, ll 88% M 13:55 300+ TOP RECTIFIERS Questions a... . xX @ QH< : engineeringinterviewquestions.com 17. Define what is meant by voltage regulation of a dc power supply? The change in voltage from no-load to full- load condition is known as voltage regulation. 18. Why is it necessary to include voltage stabilizer in a power supply? The magnitude of output dc voltage may vary with the variation of either the input ac voltage or the magnitude of load current. So at the output of a rectifier-filter combination a voltage stabilizer is required. RECTIFIERS Interview Questions and Answers pdf free download :: ® Posted on engineer Q L Posted in RECTIFIERS Questions aNO-- ll 88% 13.54 300+ TOP RECTIFIERS Questions a... x @ QO < engineeringinterviewquestions.com 14. Define why R-C filters are suitable only for light loads? R-C filters have poor voltage regulation and need adequate ventilation to dissipate the heat developed in the resistor R. Thus R-C filters are suitable only for light loads. 15. Why is bleeder resistance employed in a filter circuit? A resistance, called the bleeder resistance, is placed across the filter ouput, to provide flow of necessary minimum current through the choke at all time. 16. What is the purpose of bleeder resistance in a rectifier circuit using L-C filter? Bleeder resistance RB is placed in parallel with the load so as to maintain a certain minimum current through the choke, even the load resistor gets open-circuited, a 4s) improves filtering action. aNO-- ll 88% 13.54 300+ TOP RECTIFIERS Questions a... x @ QO < engineeringinterviewquestions.com 11. Define why series inductor and L- section filters cannot be used with half- wave rectifiers? Series inductor and L-section filters cannot be used with half-wave rectifiers because operation of series inductor depends upon the current through it and needs a minimum current to flow at all times. 12. Why capacitor input filter is preferred to choke input filter? In capacitor input filter, the dc output is much larger and ripples are less in comparison to those in choke input filter. So, capacitor input filter is preferred to choke input filter. 13. Why 1-filters are not suitable for varying loads? Voltage regulation in case of m-filters is very poor and, therefore, m-filters are not s for varying loads. aNO-- ll 88% 13.54 300+ TOP RECTIFIERS Questions a... x @ QO < engineeringinterviewquestions.com 8. What is transformer utilization factor? Transformer utilization factor is defined as the ratio of power delivered to the load and ac rating of secondary of supply power transformer. 9. The output of a 60Hz full-wave bridge rectifier has a 60 Hz ripple. It this circuit working properly? A full-wave rectifier with 60Hz input must have lowest ripple frequency equal to twice the input frqeuency i.e. 120Hz. If the ripple frequency is 60Hz, it means some diodes in the circuit are not working. 10. Define what is meant by filter? Filter is a device that converts pulsating output of rectifier into a steady dc level. RECTIFIERS Interview Questions and Answers :: 414 Nafnrna «nrkhty cayrinc indunrtar and T NG@O-- Ball 88% 13:54 300+ TOP RECTIFIERS Questions a... x @ QO < engineeringinterviewquestions.com 5. Define why half-wave rectifiers are generally not used in dc power supply? The type of supply available from half-wave rectifier is not satisfactory for general power supply. That is Define why it is generally not used in dc power supply. 6. Define why diodes are not operated in the breakdown region in rectifiers? In breakdown region, a diode has a risk of getting damaged or burnt because the magnitude of current flowing through it increases in an uncontrollable manner. That is Define why didoes are not operated in the breakdown region in rectifiers. 7. Ripple as referred to in a rectifier circuit. The ac component contained in the pulsating output ofa rectifier is know 4s) ripple. Oan-.- Ball 88% 13:54 300+ TOP RECTIFIERS Questions a... x @ QO < engineeringinterviewquestions.com RECTIFIERS Questions :- 1. What is a dc power supply? The part of the equipment that converts ac into dc is called dc power supply. 2. Define what is a rectifier? A rectifier is a device which converts alternating current (or voltage) into unidirectional current (or voltage). 3. What is PIV of a diode in a rectifier circuit? Peak Inverse Voltage (PIV) is the maximum possible voltage that occurs across a diode when it is reverse biased. 4. What is the importance of peak inverse voltage? If the applied voltage in reverse biased condition exceeds peak inverse voltag rating of the diode, then the diode ma damaged.

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