Case Study
Broadband (2-18GHz)
GaN PA Design
GaN technology can be
used to realise broadband
microwave power amplifiers
with output power levels
of around 5 times those of
the best performing GaAs
PHEMT parts. This case GDSII Layout of the 2-18GHz GaN PA
study presents details of a
2-18GHz GaN PA MMIC with
a gain of 10dB and an
output power capability of
7W. Gallium nitride (GaN) processes with The design makes use of the 0.25µm
transistors suitable for operation at gate length GaN on SiC process of
microwave frequencies are now TriQuint Semiconductor. The distributed
commercially available from a number topology embeds multiple transistors
of foundries. The higher breakdown within low pass filter structures. The gate
voltage and maximum junction and drain capacitances of the transistors
temperature of GaN transistors make form the shunt capacitive elements of the
them well suited to the realisation of filters. A total of ten transistors have
high power amplifiers. The design been used to give an output power of
presented here is a Non-uniform around 7W over 2 to 18GHz. The NDPA
Distributed Power Amplifier (NDPA), design approach is to taper the
which allows simultaneous coverage of characteristic impedance of the drain line
the entire 2-18GHz band with high so as to try and maintain a near optimum
output power and flat gain. load impedance at each transistor.
Sheet Code RFi0603
Small-signal Performance
Plextek RF Integration Plextek Ltd., London Road, Great Chesterford, Essex CB10 1NY
UK
T: +44 (0) 1799 533200 E: [email protected] W: www.plextekrfi.com
Vd
RF Out
RF In
Vg
Simplified Schematic of the GaN NDPA
A simplified circuit schematic of The downside to this technique Careful design of the drain bias
the amplifier is shown above. It is that some available gain must choke is essential. The tracks
can be seen that series capacitors be sacrificed resulting in a trade- must be wide enough to carry the
are included at the gate of each off of gain versus power. The peak drain bias current and it
transistor. This allows the cut-off value of the series capacitors is must have a high enough
frequency of the gate line filter tapered along the gate line to inductance to present an
to be increased for a given maintain a constant drive level at adequate impedance at the low
transistor size so increasing the each transistor input. Gate bias end of the operating band. The
available output power for a feed resistors are required in approach adopted here is evident
particular upper operating parallel with each series gate in the amplifier layout plot
frequency. capacitor. shown overleaf.
Large-signal Performance
Plextek RF Integration Plextek London Road Great Chesterford Essex CB10 1NY UK
T: +44 (0) 1799 533200 E: [email protected] W: www.plextekrfi.com
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