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2SC5446 PDF

This document provides specifications for the Toshiba 2SC5446 transistor. It is a silicon NPN triple diffused mesa transistor intended for use in high-speed switching applications such as horizontal deflection output for high resolution displays and color televisions. Key features include a maximum collector-base voltage of 1700V, saturation voltage below 3V, and fall time as fast as 0.1 microseconds. The document provides maximum ratings, electrical characteristics, and packaging/marking details.

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Malak Rathor
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0% found this document useful (0 votes)
147 views6 pages

2SC5446 PDF

This document provides specifications for the Toshiba 2SC5446 transistor. It is a silicon NPN triple diffused mesa transistor intended for use in high-speed switching applications such as horizontal deflection output for high resolution displays and color televisions. Key features include a maximum collector-base voltage of 1700V, saturation voltage below 3V, and fall time as fast as 0.1 microseconds. The document provides maximum ratings, electrical characteristics, and packaging/marking details.

Uploaded by

Malak Rathor
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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2SC5446

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5446
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION Unit: mm

DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS

z High Voltage : VCBO = 1700 V


z Low Saturation Voltage : VCE (sat) = 3 V (Max.)
z High Speed : tf (2) = 0.1 µs (Typ.)

ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Collector−Base Voltage VCBO 1700 V


Collector−Emitter Voltage VCEO 600 V
Emitter−Base Voltage VEBO 5 V
DC IC 18
Collector Current A JEDEC ―
Pulse ICP 36
Base Current IB 9 A JEITA ―

Collector Power Dissipation PC 200 W TOSHIBA 2-21F2A


Junction Temperature Tj 150 °C Weight: 9.75 g (typ.)
Storage Temperature Range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

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2SC5446
ELECTRICAL CHARACTERISTICS (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT

Collector Cut−off Current ICBO VCB = 1700 V, IE = 0 ― ― 1 mA


Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 10 µA
Emitter−Base Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 600 ― ― V
hFE (1) VCE = 5 V, IC = 2 A 10 ― 40
DC Current Gain hFE (2) VCE = 5 V, IC = 9 A 6 ― 13 ―

hFE (3) VCE = 5 V, IC = 14 A 4 ― 8


Collector−Emitter Saturation Voltage VCE (sat) IC = 14 A, IB = 3.5 A ― ― 3 V
Base−Emitter Saturation Voltage VBE (sat) IC = 14 A, IB = 3.5 A ― 1.0 1.5 V
Transition Frequency fT VCE = 10 V, IC = 0.1 A ― 1.7 ― MHz
Collector Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 290 ― pF
Storage Time tstg (1) ICP = 9 A, IB1 (end) = 1.5 A ― 2.5 3.5
µs
Fall Time tf (1) fH = 64 kHz ― 0.12 0.3
Switching Time
Storage Time tstg (2) ICP = 7 A, IB1 (end) = 1.25 A ― 2.1 2.3
µs
Fall Time tf (2) fH = 100 kHz ― 0.10 0.15

Marking

Part No. (or abbreviation code)


TOSHIBA
2SC5446
Lot No.
JAPAN
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SC5446

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2SC5446

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2SC5446

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2SC5446

RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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