PROFET® BTS307

Smart High-Side Power Switch

Product Summary
Overvoltage protection Vbb(AZ) 65 V
Operating voltage Vbb(on) 5.8 ... 58 V
Features On-state resistance RON 250 m
 Overload protection Load current (ISO) IL(ISO) 1.7 A
 Current limitation
 Short circuit protection
 Thermal shutdown PG-TO263-5-2
 Overvoltage protection
 Fast demagnetization of inductive loads
 Reverse battery protection1)
 Open drain diagnostic output
 Open load detection in OFF-state
 CMOS compatible input
 Loss of ground and loss of Vbb protection
 Electrostatic discharge (ESD) protection

 Green Product (RoHS compliant)

 AEC Qualified

Application
 C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
 Most suitable for inductive loads
 Replaces electromechanical relays, fuses and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

+ V bb
3
Voltage Overvoltage Current Gate
source protection limit protection
V Logic

Voltage Charge pump Limit for OUT

unclamped 5
sensor Level shifter ind. loads Temperature
Rectifier sensor
2 IN
Open load
Load
ESD Logic detection

4 ST
Short circuit
detection

GND PROFET
1
Signal GND Load GND

)
1
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet 1 2013-10-10
 BTS307

Pin Symbol Function

1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback
5 OUT O Output to the load
(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 65 V
Supply voltage for short circuit protection2) Vbb 40 V
Tj Start=-40 ...+150°C
Load current (Short circuit current, see page 4) IL self-limited A
Operating temperature range Tj -40 ...+150 °C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC), TC  25 °C Ptot 50 W
Electrostatic discharge capability (ESD) IN, ST: VESD 1.0 kV
(Human Body Model) all other pins: tbd (>1.0)
Input voltage (DC) VIN -0.5 ... +36 V
Current through input pin (DC) IIN 2.0 mA
Current through status pin (DC) IST 5.0
see internal circuit diagrams page 5

Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC -- -- 2.5 K/W
junction - ambient (free air): RthJA -- -- 75

2)
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher Vbb.
Data Sheet 2 2013-10-10
 BTS307
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)
IL = 2 A, Vbb = 24 V Tj=25 °C: RON -- 220 250 m
Tj=150 °C: 390 500
Nominal load current, ISO Norm (pin 3 to 5) 1.4 1.7
VON = 0.5 V, TC = 85 °C IL(ISO) -- A
Output current (pin 5) while GND disconnected or IL(GNDhigh) -- -- 1.1 mA
GND pulled up, Vbb=32 V, VIN= 0, see diagram
page 6
Turn-on time to 90% VOUT: ton 15 -- 80 s
Turn-off time to 10% VOUT: toff 20 -- 70
RL = 12 , Vbb = 20V, Tj =-40...+150°C
Slew rate on, 10 to 30% VOUT, dV /dton -- -- 6 V/s
RL = 12 , Vbb = 20V, Tj =-40...+150°C
Slew rate off, 10 to 30% VOUT, -dV/dtoff -- -- 7 V/s
RL = 12 , Vbb = 20V, Tj =-40...+150°C

Operating Parameters
Operating voltage 3) Tj =-40...+150°C: Vbb(on) 5.8 -- 58 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.7 -- 4.7 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.9 V
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.5 V
see diagram page 10 Tj =-40...+150°C:
Undervoltage hysteresis Vbb(under) -- 0.4 -- V
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage protection4) Tj =-40...+150°C: Vbb(AZ) 65 70 -- V
Ibb=40 mA
Standby current (pin 3), Ibb(off) A
VIN=0 Tj=-40...+150°C: -- 10 50
5)
Operating current (Pin 1) , VIN=5 V IGND -- 2.2 -- mA

3) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
4)
See also VON(CL) in table of protection functions and circuit diagram page 6.
5) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Data Sheet 3 2013-10-10
 BTS307
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions6)
Initial peak short circuit current limit (pin 3 to 5) IL(SCp)
Tj =-40°C: -- -- 19 A
Tj =25°C: -- 10 --
Tj =+150°C: 4.0 -- --
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C: VON(CL) 59 -- 75 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis Tjt -- 10 -- K
Reverse battery (pin 3 to 1) 7) -Vbb -- -- 32 V

Diagnostic Characteristics
Open load detection current IL(off) -- 6 -- A
(included in standby current Ibb(off))
Open load detection voltage Tj=-40..150°C: VOUT(OL) 2.4 3 4 V
Short circuit detection voltage V
(pin 3 to 5) VON(SC) -- 2.5 --

Input and Status Feedback8)

Input resistance RI -- 20 -- k
see circuit page 5
Input turn-on threshold voltage VIN(T+) 1 -- 2.5 V
Input turn-off threshold voltage VIN(T-) 0.8 -- -- V
Input threshold hysteresis  VIN(T) -- 0.5 -- V
Off state input current (pin 2), VIN = 0.4 V IIN(off) 1 -- 30 A

On state input current (pin 2), VIN = 3.5? V IIN(on) 10 25 70 A

Delay time for status with open load td(ST OL3) -- 200 -- s
after Input neg. slope (see diagram page 10)
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) -- -- 0.4

6)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
7) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
8)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet 4 2013-10-10
 BTS307
Truth Table
Input- Output Status
level level BTS307
Normal L L L
operation H H H
9
Open load L ) H
H H H
Short circuit L L L
to GND H L L
Short circuit L H H
to Vbb H H H
Overtem- L L L
perature H L L
Under- L L L
voltage H L L
Overvoltage no overvoltage shutdown,
see normal operation
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10)

Terms Status output

+5V
Ibb
3
I IN R ST(ON)
Vbb ST
IN
2 IL VON
PROFET OUT ESD-
I ST 5
ZD
ST GND
4
V VST GND
IN
ESD-Zener diode: 6.1 V typ., max 5 mA;
V 1
bb IGND VOUT RST(ON) < 0  at 1.6 mA, ESD zener diodes are not to
R
GND be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).

Short circuit detection

Input circuit (ESD protection) Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
R
I + V bb
IN

ESD-ZD I
I V
I ON

GND
OUT

Logic Short circuit

ESD zener diodes are not to be used as voltage clamp unit detection
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).

)
9
Power Transistor off, high impedance, internal pull up current source for open load detection.
Data Sheet 5 2013-10-10
 BTS307
Inductive and overvoltage output clamp GND disconnect
+ V bb

V
Z 3
+5V
Vbb
IN
VON 2
12k PROFET OUT
5
OUT
ST
4
GND P R OFE T GND
V V 1
bb IN VST V
GND
VON clamped to -- V typ.

For Vbb=24V and VIN=0V: VST>2.8V @ IST   if pulled up as shown.

Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) .
Overvolt. and reverse batt. protection
+ V bb GND disconnect with GND pull up
V 3
Z2
R IN RI
IN Vbb
IN
Logic 2

PROFET OUT
ST 5
R ST
ST
V 4
Z1 P R O FE T GND
GND 1
R GND
V V V
V IN ST GND
bb
Signal GND

VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , Any kind of load. If VGND > VIN - VIN(T+) device stays off
RST= 15 k, RI= 20 k typ. Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive

Open-load detection load
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
3

high Vbb
IN
2

PROFET OUT
5
ST
OFF 4
GND
I
L(OL) 1

V
Logic Open load bb
unit detection V
OUT
Normal load current can be handled by the PROFET
itself.
Signal GND

Data Sheet 6 2013-10-10

 BTS307
Vbb disconnect with charged external Inductive Load switch-off energy
inductive load dissipation
E bb
S 3 E AS
high Vbb
IN ELoad
2
Vbb
OUT IN
PROFET
5 D
ST PROFET OUT
4
GND
= ST EL
1
GND L
V
bb ZL { RL ER

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

Energy stored in load inductance:

2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt,
with an approximate solution for RL  0 :
IL· L IL·RL
EAS= ·(V + |VOUT(CL)|)· ln (1+ )
2·RL bb |VOUT(CL)|

Data Sheet 7 2013-10-10

 BTS307
Options Overview
all versions: High-side switch, Input protection, ESD protection and reverse battery
protection with 150  in GND connection, protection against loss of ground
Type BTS 410D2 410E2 410G2 410H2 307 308
Logic version D E G H
Overtemperature protection with hysteresis
Tj >150 °C, latch function10)11) X X X
Tj >150 °C, with auto-restart on cooling X X X
Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 8 V X X
typ10) (when first turned on after approx. 150 s)
switches off when VON>8.5 V typ.10) X X
(when first turned on after approx. 150 s)
Achieved through overtemperature protection X X
Open load detection
in OFF-state with sensing current 6 A typ. X X X
in ON-state with sensing voltage drop across X X X
power transistor
Undervoltage shutdown with auto restart X X X X X X
Overvoltage shutdown with auto restart X X X X - X
Status feedback for
overtemperature X X X X X X
short circuit to GND X X - X X X
12)
short to Vbb -12) - -12) X X X
open load X X X X X X
undervoltage X - - - X -
overvoltage X - - - - -
Status output type
CMOS X
Open drain X X X X X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X X X X X X
Load current limit
high level (can handle loads with high inrush currents) X X
low level (better protection of application) X X X X
Protection against loss of GND X X X X X X

) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT 
10

0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
12)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
Data Sheet 8 2013-10-10
 BTS307

Timing diagrams
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
Figure 1a: Vbb turn on, :

IN
IN

t d(bb IN) V OUT

V
bb
normal
Output short to GND
operation

V I I
OUT L L(SCp)
I
L(SCr)
A

ST open drain
ST

t t
A
Heating up requires several milliseconds, depending on external
in case of too early VIN=high the device may not turn on (curve A)
conditions. External shutdown in response to status fault signal
td(bb IN) approx. 150 s
recommended.

Figure 2a: Switching an inductive load, Figure 4a: Overtemperature:

Reset if Tj <Tjt

IN
IN

ST
ST

V
V OUT
OUT

T
I J
L

t
t

Data Sheet 9 2013-10-10

 BTS307
Figure 5a: Open load, : detection in OFF-state, turn
on/off to open load
Figure 6a: Undervoltage:

IN
IN

t
d(ST OL3) V
ST bb

V Vbb(u cp)
bb(under)
V
bb(u rst)
V
OUT

V OUT

I
L open normal
ST open drain
*) t
t
td(ST,OL3) depends on external circuitry because of high
impedance Figure 6b: Undervoltage restart of charge pump
*) IL = 6 A typ

V on
Figure 5b: Open load, : detection in OFF-state, open
load occurs in off-state

IN
off-state

on-state

ST

V
OUT V
bb(u
rst)
V V
OUT(OL) bb(u cp)

V
bb(under)
I
L normal open normal Vbb

charge pump starts at Vbb(ucp) =5.6 V typ.

*) *) t

*) IL = 6 A typ

Data Sheet 10 2013-10-10

 BTS307
Figure 7a: Overvoltage, no shutdown:

IN

Vbb VON(CL)

V
OUT

VOUT(OL)

ST

Data Sheet 11 2013-10-10

 BTS307

Package and Ordering Code

All dimensions in mm
Published by
PG-TO263-5-2 Ordering code Infineon Technologies AG,
BTS307 E3062A SP001104812 D-81726 München
© Infineon Technologies AG 201
All Rights Reserved.

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or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.

Data Sheet 12 2013-10-10