EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

EC2403 RF AND MICROWAVE ENGINEERING

QUESTION BANK
Unit I- TWO PORT RF NETWORKS- CIRCUIT REPRESENTATION

PART A

1. State the limitations in measuring Z,Y and ABCD parameters at microwave frequencies
( N/D 2011).
2. Specify the X-band frequency range and wavelength. ( N/D 2011)
3. Specify the ABCD relationship of a lossless transmission line (N/D 2005)
4. Specify the k-band frequency range and wavelength ( M/J 2007)
5. Define Q- Factor
6. Define – Skin Effect
7. Define- Straight wire Inductance
8. State the different types of high frequency inductors.
9. State the different types of high frequency resistors.
10. State the different types of high frequency capacitors.
11. Draw the equivalent circuit of a practical capacitor (N/D 2012).
12. State reciprocity theorem.
13. Why are S parameters used in microwaves?
14. Define- Scattering Matrix
15. Define – Return Loss
16. What is the zero property of S- matrix?
17. What is meant by symmetry of scattering matrix? ( A/M 2008)
18. What is wave guide?
19. Define – Lossless Network
20. Why are S parameters used in microwaves?
21. Define – Straight wire Inductance
22. Which one is called junction?
23. Write the unitary property for a lossless junction.
24. State the principal advantage of microwave frequencies over lower frequency.
25. List the applications of waveguide twist.
26. What are the basic types of directional couplers?
27. Express power input and power output under matched conditions for a two port network in terms
of wave components. ( M/J 2013)
28. Define- Reciprocal and Symmetrical Networks (M/J 2013)
29. Name the properties of S- parameters. ( N/D 2012)
30. A 5 dB attenuator is specified as having VSWR of 1.2. Assuming that the device is reciprocal,
find “S” parameters. ( N/d 2011)
31. Define- Two Port Network
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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

32. Mention the purposes of resistors.

33. Name the types of resistors.
34. Write the applications of Inductors.
35. What is wire?
36. Mention the many forms of wire.
37. Write about the skin effect in a wire.
38. Give short note on straight-wire inductance in wire.
39. Define transducer power gain.
40. What are the parameters used to evaluate the performance of an amplifier?

UNIT I- PART B
1. Prove the symmetry property of [s] in a reciprocal network.
2. Discuss about unitary property for a lossless junction
3. Explain the S-matrix representation of multi port network.
4. Explain in detail about low frequency parameters.
5. How microwave junction can be described by scattering matrix. Derive the scattering matrix
relation between input and output of a nxn junction.
6. Explain the transmission matrix for 2-port networks ( N/D 2011)
7. List and explain the properties of S parameters ( N/D 2011)
8. Explain the symmetry property in reciprocal network. ( N/D 2011)
9. Write in detail about resistors and its types. ( N/D 2011)
10. Give the [ABCD] matrix for a two-port network and derive its [s] matrix. ( N/D 2012)
11. Formulate scattering matrix for a n- port microwave network ( N/D 2012)

UNIT II: RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS

PART A
1. What is meant by power gain of an amplifier? ( N/D 2012)
2. Define – Unconditional Stability
3. Define – Unilateral Power Gain
4. Define – Available Power Gain
5. Write the expression for noise figure of a two port amplifier (N/ D 2011)
6. Define – Noise figure
7. What is the need for impedance matching Network ( N/D 2012)
8. What are the considerations in selecting a matching network? ( N/D 2012)
9. State the various types of waveguide Stub?
10. Define – Positive RF feedback
11. Name the types of Magnetron.
12. Define – Transit time
13. Why impedance matching is required? What are the other constraints required? (M/J 2013)
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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

14. Define Power gain of an amplifier in terms of S- parameters and reflection coefficients.
( N/D 2012)
15. Draw typical output stability circle and input stability circle. (M/J 2013)
16. What are the major bands available in microwave frequencies?
17. Describe IEEE microwave frequency bands.
18. Write the applications of microwaves.
19. Enumerate the basic advantages of microwaves.
20. What is H-plane tee?
21. What is E- plane Tee?
22. What is sum arm?
23. Name some uses of waveguide- tees.
24. Define – Tee Junction
25. What is sum arm?
26. Why bends are used?
27. Define – Gradual twists
28. Give a note on directional couplers
29. What is circulator?
30. What do you meant by isolation?
31. Define – directivity of directional coupler
32. Write the characteristics of a three- port Tee- Junction.

UNIT II- PART B

1. Discuss the various aspects of amplifier – power relations for RF transistor amplifier design.
2. Explain stability considerations for RF transistor amplifier design.(N/D 2011)
3. Explain various stabilization methods.( N/D 2011)
4. Discuss gain considerations for RF amplifier.
5. A microwave amplifier is characterized by its S- parameters. Derive equations for power gain for
a transistor amplifier. ( M/J 2013)
6. What is matching network? Why is it required? ( N/D 2012)
7. Derive the transducer power gain for a transistor amplifier. (M/J 2013)
8. Discuss about the design of T- section and Pi- section and matching networks.

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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

UNIT III MICROWAVE PASSIVE COMPONENTS

PART A

1. What are scattering coefficients?

2. Find the resonant frequency of TE101 mode of an air filled rectangular cavity of dimensions 5cm *
4cm * 2.5cm.
3. Why is magic tee referred as E- H tee?
4. Draw the structure of two hole directional coupler ( N/D 2011)
5. What is meant by directivity of directional coupler? ( N/D 2009)
6. What are the basic types of directional coupler? ( A/M 2008)
7. Define – Isolator
8. Define – coupling factor
9. Define – Non-reciprocal Devices
10. State the properties of ferrites.
11. Give the significance of Rat- Race junctions. ( M/J 2013)
12. How a Faraday rotation isolator can be constructed by using ferrite rod? ( N/D 2008)
13. Define – guide wavelength
14. State the need for circulator in microwave applications.
15. A directional coupler is having coupling factor of 20 dB and directivity of 40 dB. If the incident
power is 900 mW, what is the coupled power? ( M/J 2013)
16. What is the voltage Standing Wave Ratio?
17. Write the properties of ferries.
18. Write the types of ferrite devices.
19. Define – four port circulator
20. Write the applications of circulators.
21. Name some uses of isolators.
22. Write the types of ferrite devices.
23. Derive the [S] matrix for 3 port circulator.
24. What do you meant by attenuation loss?
25. Mention the methods used to measure impedance.

UNIT III- PART B

1. Explain the properties of E-plane Tee and derive the expression of scattering matrix. ( M/J 2013)
2. Explain the properties of magic Tee and derive scattering matrix for it. ( M/J 2013)
3. Explain how directional coupler can be used to measure reflected power. (N/D 2012)
4. Explain the properties of H- plane Tee and give reasons why it is called shunt Tee. ( N/D 2012)
5. Derive the S matrix for directional coupler. ( N/D 2011)
6. Discuss the structure and principle of operation of isolator and circulator. ( N/D 2011)
7. Explain the construction and working of tunnel diode and its applications. (N/D 2011)
8. Explain the construction and working of varactor diode with neat diagram and its applications.
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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

UNIT IV : MICROWAVE SEMICONDUCTOR DEVICES

PART A
1. What are M-type tubes? ( A/M 2008)
2. State the advantages for Microwave IC’s ( A/M 2008)
3. What is the other name for O- type tube? ( N/D 2007)
4. Differentiate tunnel diode from normal PN diode ( N/D 2007)
5. What is HEMT? ( N/D 2011)
6. What is MESFET? ( N/D 2007)
7. State the limitations of bipolar devices at high frequencies ( N/D 2007)
8. State the limitations of bipolar devices at high frequencies ( N/D 2007)
9. State transferred electron effect. ( N/D 2012)
10. State Gunn Effect. ( N/d 2012)
11. What are the materials that exhibit Gunn Effect?
12. What are the major disadvantages of IMPATT diodes? ( N/D 2008)
13. State the advantages of parametric amplifier. ( N/D 2011)
14. What are the basic materials required for microwave integrated circuit? ( N/D 2007)
15. State the different types of lithography. ( A/M 2008)
16. State the various MMIC fabrication techniques.
17. What is GUUNN Effect? Name the materials that exhibit Gunn Effect? (M/J 2013)
18. Draw the voltage waveforms of TRAPPATT diode (M/J 2013)
19. Write the difficulties of MMICs.
20. State any two applications of parametric amplifier ( M/J 2007)
21. Write the advantages of ion-implantation method.
22. What are the different techniques used to fabricate MMIC.
23. Write the classification of microwave tubes.
24. Why the output cavity is called as catcher cavity?
25. Mention the application of two-cavity klystron.
26. Mention some characteristics of reflex klystrons.
27. Define– Reflex Klystron
28. What do you meant by Applegate diagram?
29. Define – Bunching
30. Draw the equivalent circuit of a reflex klystron
31. What is drift space?
32. Define – electronic Efficiency
33. What is drift space?
34. Name the two configurations of klystron.
35. What is the need for dielectric materials
36. Define– Substrate
37. Write some properties of resistive materials.

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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

UNIT IV- PART B

1. Explain the tunneling action in a tunnel diode. (M/J 2013)
2. Draw the construction and explain the working of IMPATT diode. ( M/J 2013)
3. With the help of two-valley, explain how negative resistance can be created in Gunn diode.
(N/D 2012)
4. With neat diagram, explain the working principle of Gunn diode, mention its application.
(N/D 2011)
5. Explain the characteristics and working of (N/D 2011)
I. Avalanche transit time diode
II. Parametric amplifier.
6. Explain the fabrication techniques of a monolithic microwave integrated circuit.(N/D 2012)
7. Explain the tunneling action in a tunnel diode. ( N/D 2012)
8. Draw the construction and explain the working of IMPATT diode. (N/D 2012)
9. List out the basic materials required for the manufacture of MMIC.
10. Describe the modes of operation of Gunn diode.

UNIT V : MICROWAVE TUBES AND MEASUREMENTS

PART A
1. State any four limitations of conventional tubes at high frequencies? ( N/D 2011)
2. A helix travelling wave tube operates at 4 GHz under a beam voltage of 10 kV and beams current
of 500 mA. If the helix is 25 ohms and interaction length is 20 cm, find the gain parameter.
3. What is the principle by which high power measurements could be done by calorimetric method?
(a/M 2008)
4. State the demerits of single bridge power meter. ( N/D 2008)
5. State any two sensors used to measure the power ( N/D 2009)
6. What is bolometer? ( M/J 2007)
7. What are the possible errors occur in measurement of standing wave ratio? ( N/D 2007)
8. Define – Reflection Loss
9. Define – Return Loss
10. What is VSWR meter?
11. What is colorimeter?
12. What are tunable detectors?
13. What is calorimetric direct heating method?
14. What is calorimetric indirect heating method?
15. Name the errors possible in VSWR measurements? (M/J 2007)
16. What is the role of slow wave structures in TWT? ( M/J 2013)
17. Compare o –type and M- type tube.
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EC2403- RF AND MICROWAVE ENGINEERING VII Semester ECE

18. Mention the advantages of smith chart in the design of matching network.
19. Why we go for double stub matching networks?
20. Define – unconditional stability
21. Draw the equivalent circuit of Gunn diode.
22. Write short notes on feedback of RF circuit.
23. Define – Transducer Power Gain.
24. Name the factors which are used for selecting a matching network.
25. Mention the advantages of smith chart in the design of matching network.

UNIT V- PART B
1. Describe how the frequency of a given microwave source can be measured. ( M/J 2013)
2. Explain the measurement of high VSWR with the help of block diagram (M/J 2013)
3. Draw and explain the operation of two – cavity klystron amplifier.
4. Explain the principle of the cavity klystron oscillator with neat sketch. (M/J 2013)
5. Describe how the frequency of a given microwave source can be measured. (N/D 2012)
6. Explain how low VSWR can be measured using microwave bench. (N/D 2012)
7. Discuss slotted line method of VSWR measurement. (N/D 2011)
8. Derive the expression for optimum distance of klystron in bunching process.
9. Explain the operation of TWT.
10. Derive the hull cut off magnetic and voltage equations.

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