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Vlsi Technology Assignments

The document discusses phosphorus diffusion and implantation in silicon. It provides calculations to determine: 1) The amount of phosphorus introduced into silicon through predeposition for 1 hour. 2) The junction depth and surface concentration after a subsequent 2 hour drive-in. 3) The implantation dose from a 10 minute beam and peak impurity concentration from the implantation profile.

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rahul
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19 views

Vlsi Technology Assignments

The document discusses phosphorus diffusion and implantation in silicon. It provides calculations to determine: 1) The amount of phosphorus introduced into silicon through predeposition for 1 hour. 2) The junction depth and surface concentration after a subsequent 2 hour drive-in. 3) The implantation dose from a 10 minute beam and peak impurity concentration from the implantation profile.

Uploaded by

rahul
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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1. Phosphorus is diffused into a uniformly doped p-type silicon with N B = 1016/cm3 at 11500C.

Given that the solid-solubility of phosphorus in silicon at 11500C is 1020/cm3 and the diffusion

coefficient at this temperature is 1x10-12cm2/sec, (a) calculate the total number of phosphorus

atoms per unit area of the silicon surface after a predeposition time of 1 hour. (b) If after this,

drive in is carried out for 2 hours at the same temperature, what will be the final junction depth

and the surface concentration?

(a) The total amount of phosphorus introduced in silicon per unit area after predeposition is

∞
Q(t) = ∫ [N(x, t) − N B ]dx = 2N o
Dt
……(1)
0
π

20 10-12 x3600
Therefore Q = 2x10 = 6.77x1015 /cm2
π

(b) Now after drive-in, the surface concentration is given by setting x = 0 in the following

eqn.

Q  x2 
N(x, t) = exp −  + N B ……..(2)
πDt  4Dt 

So, if the drive-in is carried out for 2 hours at the same temperature, we have

6.77x1015
Ns = + 1016 = 4.5x1019/cm3
πx10 x7200
-12

In order to obtain the junction depth, we note that at the junction, the phosphorus

concentration becomes equal to the original background (boron) doping concentration of the

sample, i.e. N(x j ,t) = N B . From eqn. 2, we can now write

Q  x2   x 2j 
exp −  = N B or, 4.5x1019 exp −  = 1016
πDt  −12 
 4Dt   4x10 x7200 

from which the junction depth is obtained as x j = 4.92µm.


2. Phosphorus is implanted in a p-type silicon sample with a uniform doping concentration of

1016/cm3. If the beam current density is 2µA/cm2 and the implantation is carried out for ten

minutes, calculate the implantation dose. Also find the peak impurity concentration assuming R p

= 1.1µm and ∆R p = 0.3µm.

Solution: From the following eqn., we obtain the value of the implantation dose as

Jt
Qo = ……..(1)
q

Where J is the beam current density and t is the implantation time. Therefore

2 × 10 −6 × 10 × 60
Qo = −19
= 7.5 × 1015 cm − 2
1.6 × 10

The peak impurity concentration occurs at x = R p . Substituting this in eqn. (2) given below, we

get the peak concentration as

Qo  1x−R 
2

N(x) = exp −    …….(2)
p

ΔR p 
 2  ΔR p  
2π
  

7.5 × 1015
Np = −4
= 6.267 × 1020 cm−3
0.3 × 10 × 2π

The surface concentration is obtained by setting x = 0 in eqn. (2). Thus

 1  − 1.1 2 
Ns = 6.267 × 1020 exp −  18
  = 1.3747× 10 cm
-3

 2  0.3  

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