Noise Design Methods

RF Circuits

Ph.D. John Jairo Pantoja A. Universidad Nacional de Colombia

1
Noise Design Methods

Contents:
1. Introduction
2. Noise Parameters
3. Constant Noise Figure Circles
4. References

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1. Introduction
Si= Input signal power
Si So=G·Si So= Output signal power
Ni= Standard input thermal noise
No= Total output noise power
N= Amplifier excess noise power
Ni No=G·Ni+N G= Amplifier power gain

Si / Ni N
Noise factor F 1
S o / No G
Noise figure NF  10 log F (dB)
(Ni=kT0B=-174dBm/Hz+Bandwidth(dBHz) @ T=T0=290°K)

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2. Noise Parameters
2
4rn S  min
F(S )  Fmin  2 2
(1  S ) 1  min
Noise Parameters
Fmin : Minimum noise factor @ S= min
rn= Rn/Z0 : Normalized noise resistance
min=|min|qmin
Minimum-noise source reflection
coefficient @ F= Fmin

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2. Noise Parameters

Bias
Frequency
dependent
dependent

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3. Constant Noise Figure Circles

Let F= Fi  Fmin
|S- CFi| = rFi
A given F corresponds to a constant noise
figure circle in the S-Plane

min 1 2 2
CFi  rFi  Ni  Ni (1  min )
1  Ni 1  Ni
Fi  Fmin 2
where Ni  1  min
4rn

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3. Constant Noise Figure Circles

1.0
Swp Max

0.8
Noise Circles
NFmin-3dB

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4GHz

0.

0
2.
4 NFmin-2dB
0. 0
3.
NFmin-1dB 4.
0
5.0
0.2
NFmin 10.0

10.0
0.2

0.4

0.6
0.8
1.0

2.0

3.0
4.0
5.0
min
0

-10.0
2
-0.

S-Plane
0
-5. 0
.
-4
4 .0
. 3
-0
-

.0
.6

- 2
-0

Swp Min
-0.8

-1.0

4GHz

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4. References

[1] G. González, Microwave transistor amplifiers: analysis