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Nota Final Exam

This document discusses electronics components and semiconductors. It describes conductors, insulators, and semiconductors, and how silicon can be doped to alter its properties. Semiconductors like silicon can be doped with donor or acceptor impurities to become n-type or p-type, respectively. Diodes contain a p-n junction, and their behavior depends on forward, reverse, or zero bias conditions which influence the depletion region. Diodes can be tested using an ohmmeter to check for shorts, opens or leaks.

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132 views7 pages

Nota Final Exam

This document discusses electronics components and semiconductors. It describes conductors, insulators, and semiconductors, and how silicon can be doped to alter its properties. Semiconductors like silicon can be doped with donor or acceptor impurities to become n-type or p-type, respectively. Diodes contain a p-n junction, and their behavior depends on forward, reverse, or zero bias conditions which influence the depletion region. Diodes can be tested using an ohmmeter to check for shorts, opens or leaks.

Uploaded by

zul
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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ELECTRONICS

SECTION A
CONDUCTOR
 Material that easily conducts electrical current.
 E.g: Copper, Silver, Gold, Aluminium.

INSULATOR

 Material that does not conduct electrical current under normal


conditions.
 E.g: Rubber, Glass, Plastics, Mica, Quartz.

SEMICONDUCTOR
 Material that is between conductors & insulators in its ability to
conduct electrical current.
 E.g: Silicon.
 Silicon has 4 valence electrons.
 Silicon atoms can form covalent bonds with each other.
 Donor impurities have 5 valence (pentavalent) electrons.
 Acceptor impurities have 3 valence (trivalent) electrons.
 N-type silicon has been doped with a donor impurity to make it
semiconduct.
 P-type silicon has been doped with an acceptor impurity to
make it semiconduct.
DOPING

 Process of adding impurities to intrinsic semiconductors to alter


their properties.
 Trivalent and Pentavalent elements are used to dope Silicon and
Germanium.
 When an intrinsic semiconductor is doped with Trivalent impurity,
it becomes a P-Type semiconductor.
 P stands for Positive, which means the semiconductor is rich in
holes or Positive charged ions.
 When an intrinsic semiconductor is doped with Pentavalent
impurity, it becomes N-Type semiconductor.
 N stands for Negative, N-type semiconductors have Negative
charged ions or in other words have excess electrons.

ENERGY DIAGRAM
MAJORITY & MINORITY CARRIERS

1. N-TYPE
 Holes are called minority carriers.
 Electrons are called the majority carriers.

2. P-TYPE
 Conduction (free) electron are called minority carriers.
 Holes are called majority carries.

DIODES

 Diodes have both P-regions and N-regions.


 The boundaries are called junctions.
 P-region is the anode side.
 N-region is the cathode side.
 Three possible bias conditions: zero, forward, and reverse.
 Zero bias is accompanied by a depletion region.
 Forward bias can collapse the depletion region.
 Reverse bias is enhances the depletion region.
 Bias determines if diodes will be off or on.
 The p-n Junction in which no external voltage is applied.
 Zero bias p-n Junction is also called as unbiased p-n junction.
 However, if the diodes terminals are shorted together, a few
holes (majority carriers) in the P-type material with enough
energy to overcome the potential barrier will move across
the junction against this barrier potential.
 The voltage potential is connected positive, to the P-
type material and negative, to the N-type material
across the diode which has the effect of Decreasing the
PN junction diodes width.
 If this external voltage becomes greater than the value
of the potential barrier, approx. 0.7 volts for silicon and
0.3 volts for germanium, the potential barriers
opposition will be overcome and current will start to
flow.
 The voltage potential is connected negative, to the
P-type material and positive, to the N-type material across
the diode which has the effect of Increasing the PN junction
diode’s width.
 The positive voltage applied to the N-type material attracts
electrons towards the positive electrode and away from the
junction, while the holes in the P-type end are also attracted
away from the junction towards the negative electrode.

SILICON DIODE OHMMETER TESTING

 Low resistance in both directions: the diode is shorted.


 High resistance in both directions: the diode is open.
 Relatively low resistance in the reverse direction: the diode is
leaky.
HALF WAVE & FULL WAVE DIAGRAM

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