SMD General Purpose

Transistor (NPN)
MMBT2222A

SMD General Purpose Transistor (NPN)

Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance

Mechanical Data SOT-23

Case: SOT-23, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.008 gram

Maximum Ratings (T Ambient=25ºC unless noted otherwise)

Symbol Description MMBT2222A Unit

Marking Code 1P

VCBO Collector-Base Voltage 75 V

VCEO Collector-Emitter Voltage 40 V

VEBO Emitter-Base Voltage 6.0 V

IC Collector Current 0.6 A

350 mW
Ptot Power Dissipation above 25°C (note 1)
2.8 mW/° C

RθJA Thermal Resistance, Junction to Ambient 357 ° C /W

TJ Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to +150 °C

Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. A/AH 2007-11-13

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Page 1 of 3
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
 SMD General Purpose Transistor (NPN)

MMBT2222A
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)

Symbol Description Min. Max. Unit Conditions

35 - VCE=10V, IC=0.1mA
50 - VCE=10V, IC=1mA
75 - VCE=10V, IC=10mA
VCE=10V, IC=10mA
hFE D.C. Current Gain 35 -
Ta=-55° C
100 300 VCE=10V, IC=150mA*
40 - VCE=10V, IC=500mA*
50 - VCE=1.0V, IC=150mA*
V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=10mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
- 0.3 IC=150mA, IB=15mA
VCEsat Collector-Emitter Saturation Voltage* V
- 1.0 IC=500mA, IB=50mA
0.6 1.2 IC=150mA, IB=15mA
VBEsat Base-Emitter Saturation Voltage* V
- 2.0 IC=500mA, IB=50mA
ICEX Collector Cut-off Current - 10 nA VEB=3V, VCE=60V
10 nA VCB=60V, IE=0
ICBO Collector Cut-off Current - VCB=60V, IE=0,
10 µA
Ta=125° C
IBL Base Cut-off Current - 20 nA VEB=3V, VCE=60V
IEBO Emitter Cut-off Current - 10 nA VEB=3V, IC=0
VCE=20V, IC=20mA,
fT Current Gain-Bandwidth Product 300 - MHz
f=100MHz
VCB=10V, f=1.0MHz,
Cobo Output Capacitance - 8.0 pF
IE=0
VEB=0.5V, f=1.0MHz,
Cibo Input Capacitance - 25 pF
IC=0
VCE=10V, IC=100µA,
NF Noise Figure - 4.0 dB
Rs=1kΩ, f=1kHz
VCB=20V, IC=20mA,
rb’Cc Collector Base Time Constant - 150 ps
f=31.8 MHz
td Delay Time - 10 IB1=15mA
IC=150mA
tr Rise Time - 25 VCC=30V
ns VEB=0.5V
ts Storage Time - 225 IB1=IB2=15mA
IC=150mA
tf Fall Time - 60 VCC=30V
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%

Rev. A/AH 2007-11-13

www.taitroncomponents.com Page 2 of 3
 SMD General Purpose Transistor (NPN)

MMBT2222A
Dimensions in mm
SOT-23

How to contact us:

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Http://www.taitroncomponents.com

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Rev. A/AH 2007-11-13

www.taitroncomponents.com Page 3 of 3