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1.characteristics of SCR

This document describes an experiment to plot the voltage-current (V-I) characteristics of three power semiconductor devices: silicon controlled rectifier (SCR), metal-oxide-semiconductor field-effect transistor (MOSFET), and insulated-gate bipolar transistor (IGBT). The experiment aims to examine the structure and operation of these devices and study their switching characteristics. Procedures are provided to connect the circuit diagrams and take measurements to obtain the static output and transfer characteristics of each device by varying the gate voltage and measuring the drain/collector current and voltage. Questions are also provided about the applications and properties of SCRs, MOSFETs, and IGBTs.

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Venkat Sai Chowdary
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465 views6 pages

1.characteristics of SCR

This document describes an experiment to plot the voltage-current (V-I) characteristics of three power semiconductor devices: silicon controlled rectifier (SCR), metal-oxide-semiconductor field-effect transistor (MOSFET), and insulated-gate bipolar transistor (IGBT). The experiment aims to examine the structure and operation of these devices and study their switching characteristics. Procedures are provided to connect the circuit diagrams and take measurements to obtain the static output and transfer characteristics of each device by varying the gate voltage and measuring the drain/collector current and voltage. Questions are also provided about the applications and properties of SCRs, MOSFETs, and IGBTs.

Uploaded by

Venkat Sai Chowdary
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Characteristics of SCR, IGBT & Power MOSFET

AIM: To plot the V-I characteristics of SCR, MOSFET and IGBT.

OBJECTIVE: To examine the structure and operation of the SCR and to study the
MOSFET, IGBT switching characteristics.

APPARATUS:

Sl.No. NAME OF THE COMPONENTS RANGE QUANTITY

1. SCR, MOSFET & IGBT 230V/5A 1 no


characteristic kit module
2. Multi Meter 0-30V 2 no
3. RPS , Dual Channel 0-30V 1 no

THEORY:

SCR: The full form of SCR is “Silicon Controlled Rectifier”. It is a three terminal semi
conducting device. The three terminals are anode (A), cathode (K) and gate (G). SCR is used
as static switches in relay control, motor control, phase control, heater control, battery
chargers, inverter, and regulated power supplies. SCR characteristic is drawn between anode
to cathode voltage (VAK) vs. anode current (IA) for different values of gate current (IG).

MOSFET: MOSFET is a three terminal semi conducting device. Its conductivity can be
controlled by gate signal. The three terminals are gate (G), source (S) and drain (D). It can be
operated as an amplifier or as a switch. Static output characteristic curve is drawn between
drain current (ID) and drain to source voltage (VDS) for the given value of gate to source
voltage (VGS). Transfer characteristic is drawn between drain current (ID) vs. gate to source
voltage (VGS).

IGBT: IGBT is a three terminal semi-conductor device. The device is turned ON by applying
positive voltage greater than threshold between gate and emitter. The three terminals are base
(B) or gate (G), collector (C) & emitter (E). It can be operated as an amplifier or as a switch.
Static output characteristic curve is drawn between collector current (IC) and collector to
emitter voltage (VCE) for a given value of base/gate to emitter voltage (VGE).
CIRCUIT DIAGRAMS:
PROCEDURE:

For plotting SCR VI characteristics:

1. Connections are made as per the circuit diagram given in Fig.

2. Set R1 and R2 to mid positions and V1 and V2 to minimum.

3. Set a finite gate current (IG1) by varying R1 and V1.

4. Slowly vary V2 (or R2) and note down VAK and IA.

5. Repeat the steps 3 and 4 for second gate current (IG2)

6. Reverse the anode voltage polarity to find the reverse characteristics

For finding holding current of SCR:

1. Ensure SCR is at ON state

2. Remove the gate voltage and start reducing VAK ; simultaneously verify the state of SCR.
If SCR is turned off, note the current (IA) just before it comes to zero.

For finding latching current of SCR:

1. Ensure that the SCR is in the state of conduction.

2. Start reducing anode voltage (VAK) slowly; simultaneously check the state of SCR by
switching off gate supply. If SCR switches off just by removing gate terminal, and switches
on by connecting gate supply, then the corresponding anode current (IA) is the latching
current for the SCR.

For plotting MOSFET static (Drain) characteristic curves:

1. Connect the circuit as given in Fig.

2. Set a finite gate source voltage (VGS1) by varying R1 and V1.

3. By varying V2 (or R2), note down VDS and ID.

4. Repeat the steps 3 and 4 for second gate source voltage (VGS2).

For plotting IGBT static (Collector) characteristic curves:

1. Connect the circuit as given in Fig.

2. Set a finite gate source voltage (VGE1) by varying R1 and V1.

3. By varying V2 (or R2), note down VCE and IC.

4. Repeat the steps 3 and 4 for second gate source voltage (VGE2).
RESULTS:
Viva questions:

1. What is semi controlled device?

2. What is fully controlled device?

3. What is uncontrolled device?

4. What are the devices used for high frequency applications?

5. What are the different methods of turning on an SCR?

6. Why is dv/dt technique not used in SCR?

7. What are applications of SCR, MOSFET and IGBT?

8. Which parameter defines the transfer characteristics in MOSFET and IGBT?

9. Write the procedure to plot the transfer characteristics of MOSFET and IGBT using the
experimental setup?

10. What are the merits and demerits of SCR, MOSFET and IGBT?

11. What is rating of SCR, MOSFET and IGBT?

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