BSR316P

SIPMOS® Small-Signal-Transistor
Product Summary
Features
VDS -100 V
• P-Channel
RDS(on),max 1.8 W
• Enhancement mode / Logic level
ID -0.36 A
• Avalanche rated

• Pb-free lead plating; RoHS compliant

• Footprint compatible to SOT23 PG-SC59

• Qualified according to AEC Q101

• Halogen free according to IEC61249-2-21

Type Package Tape and Reel Information Marking Halogen-free Packing

BSR316P PG-SC59 H6327 = 3000 pcs. / reel LC Yes Non dry

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

steady state

Continuous drain current ID T A=25 °C -0.36 A

T A=70 °C -0.29

Pulsed drain current I D,pulse T A=25 °C -1.44

Avalanche energy, single pulse E AS I D=-0.36 A, R GS=25 W 25 mJ

Gate source voltage V GS ±20 V

Power dissipation P tot T C=25 °C 0.5 W

Operating and storage temperature T j, T stg -55 ... 150 °C

ESD class JESD22-A114-HBM 1A (250V to 500V)

Soldering temperature 260 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev 1.07 page 1 2015-07-24

 BSR316P

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, minimal footprint,

R thJA - - 250 K/W
junction - ambient steady state

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA - - -100 V

Gate threshold voltage V GS(th) V DS=V GS, I D=-170 µA -2 -1.5 -1

V DS=-100 V, V GS=0 V,
Zero gate voltage drain current I DSS - -0.1 -1 µA
T j=25 °C

V DS=-100 V, V GS=0 V,
- -10 -100
T j=150 °C

Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA

V GS=-4.5 V,
Drain-source on-state resistance R DS(on) - 1.8 2.2 W
I D=-0.33 A

V GS=-10 V,
- 1.3 1.8
I D=-0.36 A

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 0.3 0.5 - S
I D=-0.29 A

Rev 1.07 page 2 2015-07-24

 BSR316P

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics3)

Input capacitance C iss - 124 165 pF

V GS=0 V, V DS=-25 V,
Output capacitance C oss - 25 33
f =1 MHz
Reverse transfer capacitance C rss - 13 20

Turn-on delay time t d(on) - 5 8 ns

Rise time tr V DD=-50 V, - 6 9

V GS=-10 V,
Turn-off delay time t d(off) I D=-0.36 A, R G,ext=6 W - 71 106

Fall time tf - 26 39

Gate Charge Characteristics2), 3)

Gate to source charge Q gs - 0.3 0.4 nC

Gate to drain charge Q gd V DD=-80 V, - 1.6 2.4

I D=-0.36 A, V GS=0 to -
Gate charge total Qg 10 V - 5.3 7.0

Gate plateau voltage V plateau - -2.7 - V

Reverse Diode

Diode continuous forward current IS - - -0.36 A

T C=25 °C
Diode pulse current I S,pulse - - -1.44

V GS=0 V, I F=0.36 A,
Diode forward voltage V SD - -0.8 -1.1 V
T j=25 °C

Reverse recovery time3) t rr - 40.6 - ns

V R=-50 V, I F=|I S|,
3) Q rr di F/dt =100 A/µs
Reverse recovery charge - 46.4 - nC

2)
See figure 16 for gate charge parameter definition
3)
Defined by design. Not subjected to production test

Rev 1.07 page 3 2015-07-24

 BSR316P
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); |V GS|≥10 V

0.6 0.4

0.5

0.3

0.4
Ptot [W]

-ID [A]
0.3 0.2

0.2

0.1

0.1

0 0
0 40 80 120 160 0 40 80 120 160

TA [°C] TA [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

101 103

100 µs 0.5
limited by on-state
100 resistance 1 ms
102
0.2
10 ms
0.1
ZthJS [K/W]

0.05
-ID [A]

100 ms
10-1 101
0.02

0.01
DC

single pulse
10-2 100

10-3 10-1
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101
-VDS [V] tp [s]

Rev 1.07 page 4 2015-07-24

 BSR316P
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

1.6 3
6V
10 V 7V
-3 V
1.4 4.5 V 2.8

2.6
1.2 -3.2 V
-4 V -3.5 V
2.4
1

RDS(on) [W]
-3.5 V
2.2
ID [A]

0.8 -4 V

2
-3 V
0.6 -4.5 V
1.8
-5 V
0.4
1.6
-2.5 V
-7 V
0.2 1.4
-10 V

0 1.2
0 1 2 3 4 0 0.4 0.8 1.2 1.6

-VDS [V] -ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

1 1

150 °C

0.8 0.8
25 °C

0.6 0.6
-ID [A]

gfs [S]

0.4 0.4

0.2 0.2

0 0
0 1 2 3 4 5 0.0 0.2 0.4 0.6
-VGS [V] -ID [A]

Rev 1.07 page 5 2015-07-24

 BSR316P
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-0.36 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-170 µA

4 2.5

3.5
2 98 %

typ
1.5
RDS(on) [W]

2.5

-VGS(th) [V]
98 %

2
1
typ.
2%

1.5

0.5
1

0.5 0
-60 -20 20 60 100 140 -60 -20 20 60 100 140

Tj [°C] Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

103 101

100

Ciss
C [pF]

IF [A]

25 °C
102 10-1

150 °C 150 °C, 98%

25 °C, 98%
10-2
Coss

Crss
101
0 20 40 60 80 100 0 0.4 0.8 1.2 1.6

-VDS [V] -VSD [V]

Rev 1.07 page 6 2015-07-24

 BSR316P

Package Outline

SC-59: Outline

Footprint

Packaging
Tape

Dimensions in mm

Rev 1.07 page 7 2015-07-24

 BSR316P
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-0.36 A pulsed
parameter: T j(start) parameter: V DD

100 10

9
25 °C
8

100 °C
7
20 V
6
125 °C
-IAV [A]

-VGS [V]
50 V
10-1 5

80 V
4

10-2 0
100 101 102 103 0 2 4 6
tAV [µs] -Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA

120

V GS

115 Qg

110
-VBR(DSS) [V]

105

V gs(th)
100

95
Q g(th) Q sw Q gate

90 Q gs Q gd
-60 -20 20 60 100 140

Tj [°C]

Rev 1.07 page 8 2015-07-24

 BSR316P

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.

Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.

Rev 1.07 page 9 2015-07-24

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Infineon:
BSR316PH6327XTSA1