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Kingston 8GB DDR3 1600 PC3-12800 (KVR16N11-8)

This document summarizes the specifications of an 8GB DDR3-1600 CL11 memory module from ValueRAM. The module uses sixteen 512M x 8-bit chips and has a JEDEC standard latency of 11-11-11 at 1.5V. Key specifications include a minimum row cycle time of 48.125ns, refresh to active/refresh command time of 260ns minimum, and row active time of 35ns minimum. The module has a height of either 0.740" or 1.180" and features on-die termination, burst lengths of 8 or 4, and average refresh periods of 7.8us or 3.9us depending on temperature.

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211 views2 pages

Kingston 8GB DDR3 1600 PC3-12800 (KVR16N11-8)

This document summarizes the specifications of an 8GB DDR3-1600 CL11 memory module from ValueRAM. The module uses sixteen 512M x 8-bit chips and has a JEDEC standard latency of 11-11-11 at 1.5V. Key specifications include a minimum row cycle time of 48.125ns, refresh to active/refresh command time of 260ns minimum, and row active time of 35ns minimum. The module has a height of either 0.740" or 1.180" and features on-die termination, burst lengths of 8 or 4, and average refresh periods of 7.8us or 3.9us depending on temperature.

Uploaded by

ninjasinaruto
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© © All Rights Reserved
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Memory Module Specifications

KVR16N11/8
8GB 2Rx8 1G x 64-Bit PC3-12800
CL11 240-Pin DIMM

DESCRIPTION SPECIFICATIONS
This document describes ValueRAM's 1G x 64-bit (8GB) DDR3- CL(IDD) 11 cycles
1600 CL11 SDRAM (Synchronous DRAM) 2Rx8, memory Row Cycle Time (tRCmin) 48.125ns(min.)
module, based on sixteen 512M x 8-bit FBGA components. The
Refresh to Active/Refresh 260ns(min.)
SPD is programmed to JEDEC standard latency DDR3-1600 Command Time (tRFCmin)
timing of 11-11-11 at 1.5V. This 240-pin DIMM uses gold
Row Active Time (tRASmin) 35ns(min.)
contact fingers. The electrical and mechanical specifications
Maximum Operating Power TBD W*
are as follows:
UL Rating 94 V - 0
Operating Temperature 0o C to +85o C
FEATURES
Storage Temperature -55o C to +100o C

• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply


*Power will vary depending on the SDRAM used.
• VDDQ = 1.5V (1.425V ~ 1.575V)

• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal banks

• Programmable CAS latency: 11, 10, 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (interleave without any limit, sequential with


starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write (either on the fly using A12 or
MRS)

• Bi-directional Differential Data Strobe

• Internal (self) calibration: Internal self calibration through ZQ


pin (RZQ: 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,


3.9us at 85°C < TCASE < 95°Cº

• Asynchronous Reset

• PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height
may vary from what is described here.

Continued >>

kingston.com Document No. VALUERAM1445-001.C00 12/18/15 Page 1


MODULE DIMENSIONS

kingston.com Document No. VALUERAM1445-001.C00 Page 2

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