EEE221 PHYSICAL ELECTRONICS

PROJECT REPORT ON PN DIODE CHARACTERIZATION

PREPARED BY
Musa Knimi Bakna

MATRIC NUMBER
2017/2/67502CM

GROUP
12

LECTURER IN CHARGE:
ENGR. DR. HENRY OHIZE

DEPARTMENT OF TELECOMMUNICATION ENGINEERING

AUGUST 2018
Introduction
The goal of the device characterization projects is to expose students to real
microelectronics devices: current-voltage characteristics, parameter extraction
techniques, and models. These projects use the LT Spice Simulation software. The
LT Spice installation and user guide. LTspice is a circuit simulator based on the
SPICE simulator and available as a free download from Linear Technology
(www.linear.com). LTspice is the most popular freeware SPICE simulator.

Engineers working at the cutting edge often use state-of-the-art design and
simulation tools in their work. This is worthwhile even if it means dealing with a
few bugs, small annoyances, and less than optimal documentation. As an
engineer trainee working at the state-of-the-art institution, I approached this
project in a conservative way and carry out the assignment as early as possible. I
also seek help of any difficulties I faced during the simulation and report
respectively.
The Lab

1. Task 1

1.1. 1N4005 (rectifier diode)

1.2. EK04 (Schottky barrier diode)
1.3. 1N4733 (Zener diode)
1.4. C566C-RFS-CT0W0BB2 (red LED)

The Characteristics of the above devices are;

1.1. 1N4005 (rectifier diode)

Rating/Characteristics Value
Forward Voltage 1.1V
Forward Current (sustained) 1A
Peak Forward Current (surge) 30A
Peak Reverse Voltage 600V
Maximum Reverse Current 5 µA
Maximum Average Power Dissipation 3W

1.2. EK04 (Schottky barrier diode)

Rating/Characteristics Value
Forward Voltage 1V
Forward Current (sustained) 1A
Peak Forward Current (surge) 25V
Peak Reverse Voltage 45V
Maximum Reverse Current 1mA
Maximum Average Power Dissipation 1W
1.3. 1N4733 (Zener diode)
Rating/Characteristics Value
Forward Voltage 1.2V
Forward Current (sustained) 200 mA
Peak Forward Current (surge) 4A
Peak Reverse Voltage 100V
Maximum Reverse Current 890mA
Maximum Average Power Dissipation 1W

1.4. C566C-RFS-CT0W0BB2 (red LED)

Rating/Characteristics Value
Forward Voltage 1.2V
Forward Current (sustained) 20 mA
Peak Forward Current (surge) 4A
Peak Reverse Voltage 100V
Maximum Reverse Current 10µA
Maximum Average Power Dissipation 50mW
2. Task 2

• Spice code for 1N4005 rectifier diode

• plot of the I-V characteristics of 1N4005 rectifier diode

3. Task 3

DFLR1400 Standard Recovery Rectifier IV Characteristics (chose diode)

• As seen from the plotted IV characteristics of 1N4005 rectifier diode and

DFLR1400 Standard Recovery Rectifier, it can be noted that the voltage
(forward Voltage) state at which 1N4005 rectifier diode started “turning
on” is almost the same with that of DFLR1400 Standard Recovery Rectifier
I.e. between 600mV and 650mV same with the forward current. This may
be as a result that both diodes are rectifiers and the graph forward biased
and nonlinear. By forward biased I mean from the circuit the higher
potential is connected to the anode. Also, the peak current for both diodes
differs
COMPARISON BETWEEN SPICE’S RESULT AND ANALYTICAL RESULT FOR
DFLR1400 STANDARD RECOVERY RECTIFIER

Analytically DFLR1400 Standard Recovery Rectifier have a forward current of 1A

that’s is the diode most overcome 1A of current before it can enter the state of
“fully on” which is obvious from the graph above we see that from above 1A the
graph was now linear.

➢ The IV Characteristics of 1N4005 rectifier diode (for Task 2)

Diode Voltage (V) Diode Current (A) Characteristic

0 0 One of “off”, “just
turning on”, “Fully on”
At 50mV 0 Off
At 100mV 0 Off
At 150mV 0 Off
At 200mV 0 Off
At 250mV 0 Off
At 300mV 0 Off
At 350mV 0 Off
At 400mV 0 Off
At 450mV 0 Off
At 500mV 0 Off
At 600mV 0 Off
At 650mV 0.005 Just turning on
At 700mV 0.020 Just turning on
At 750mV 0.070 Just turning on
At 800mV 0.231 Just turning on
At 850mV 0.602 Just turning on
At 900mV 1.199 Fully on
At 950mV 1.957 Fully on
At 1V 2.834 Fully on
➢ The IV Characteristics of DFLR1400 Rectifier Diode (for Task 3)

Diode Voltage (V) Diode Current (A) Characteristic

0 0 One of “off”, “just
turning on”, “Fully on”
At 50mV 0 Off
At 100mV 0 Off
At 150mV 0 Off
At 200mV 0 Off
At 250mV 0 Off
At 300mV 0 Off
At 350mV 0 Off
At 400mV 0 Off
At 450mV 0 Off
At 500mV 0 Off
At 600mV 0.002 Just turning on
At 650mV 0.007 Just turning on
At 700mV 0.012 Just turning on
At 750mV 0.030 Just turning on
At 800mV 0.080 Just turning on
At 850mV 0.190 Just turning on
At 900mV 0.433 Fully on
At 950mV 0.836 Fully on
At 1V 1.395 Fully on
4. Task 4

➢ This is the original plot of IV characteristics of 1N4005 rectifier diode in

task 2 before variation
 ➢ This is the varied plot of IV characteristics of 1N4005 rectifier diode in
task 2 after varying the Ohmic resistance (RS) from RS=42.0m to
RS=200.0m

OBSERVATION AFTER VARIATION

The ohmic resistance (RS) value was varied (increased from 42.0m to 200.0m)
amongst the given parameters and it was so interesting to observed that the diode
became more resistive where the flow of current (I) was negligible and the voltage
level where the diode started turning on was also reduce. This was done to study
the effect of how a device with high resistance changes its output for both current
and voltage. This I suppose is true that resistance R is inversely proportional to
current according to Ohm’s law I=V/R.
5. Plagiarism Declaration

1. I know that plagiarism is wrong. Plagiarism is to use another's work and

pretend that it is one's own.
2. I have used the required convention for citation and referencing. Each
contribution to and quotation in this assignment from the work(s) of other
people has been attributed and has been cited and referenced.
3. This submission is my own work.
4. I acknowledge that despite it been a group work, I have not allowed, and
will not allow, anyone to copy my work with the intention of passing it on
as his or her own work.
5. I acknowledge that copying someone else's assignment or essay, or part of
it, is wrong, and declare that this is my own work.

Name: Knimi Musa Bakna

Matriculation Number: 2017/2/67502CM

Signature of Declaration: