Scribd
Upload
151 views

Model Test Paper

This document contains a 3-hour final assessment test for an ECE3002 VLSI System Design course. The test contains 10 questions worth 10 marks each, for a total of 100 marks. The questions cover a range of topics including transistor modeling, logic gates, latches, adders, and barrel shifters. Students are provided with relevant device parameters and asked to perform calculations, derive expressions, design circuits, and discuss tradeoffs between design approaches.

Uploaded by

Nishant Panchal
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
151 views

Model Test Paper

This document contains a 3-hour final assessment test for an ECE3002 VLSI System Design course. The test contains 10 questions worth 10 marks each, for a total of 100 marks. The questions cover a range of topics including transistor modeling, logic gates, latches, adders, and barrel shifters. Students are provided with relevant device parameters and asked to perform calculations, derive expressions, design circuits, and discuss tradeoffs between design approaches.

Uploaded by

Nishant Panchal
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

Final Assessment Test – April 2018

Course: ECE3002 - VLSI System Design


Class NBR(s): 1485 / 1488 / 1491 / 1495 / 1499 / 1504 Slot: A2+TA2
Time: Three Hours Max. Marks: 100
General Instructions:
i) k’n = 140 µA/V2, Vtn = 0.4V, VDD = 3V, k’p = 60µA/V2, Vtp = -0.4V, Cox =1.6x10-6F/cm2, γ = 0.5 (V1/2),
2|φF|= 0.6V, λ = 0.7V-1.
ii) Assume relevant data wherever it is necessary.
iii) Assume missing data if any with justification.
Answer ALL Questions
(10 X 10 = 100 Marks)

1. Find the region of operation for each transistor in Fig.1. Calculate the drain current in each of the [10]
cases.

Fig.1

2. Derive the drain current equation of NMOS transistor at various regions of operations. Discuss any [10]
three non-ideal effects.

3. a) Determine the value of Out in Fig. 2 if A, B and C is HIGH and LOW. [6]

Fig. 2
b) Compare the merits and demerits of FinFET with CMOS devices. [4]

4. i. Derive the expression for output voltage of CMOS inverter at region C. Determine the transistor [10]
size ratio so that VM = 1.5V
ii. If you desire to design an inverter such that NMH> NML, then how do you size the NMOS and
PMOS transistors of the inverter? Explain your answer.

Page 1 of 3
5. Calculate the path delay from in to out. In order to minimize the delay, what should the size of the [10]
gates in Fig. 3 from In to Out.

Fig. 3

6. i) What is the logic function implemented by the CMOS transistor network in Fig. 4? Size the [10]
NMOS and PMOS devices so that the output resistance is the same as that of an inverter with an
NMOS W/L = 4 and PMOS W/L = 8.
ii) What are the input patterns that give the worst case tpHL and tpLH.

Fig. 4

7.(a) Identify the logic function of the stick diagram in Fig.5 [10]
i) sketch a transistor-level schematic
ii) estimate the area from the stick diagram for λ = 65 nm.

Fig. 5

OR
Page 2 of 3
7.(b) For the CMOS compounded OAI21 logic [10]
i. sketch a transistor-level schematic
ii. draw the optimized stick diagram using Euler’s path.
iii. estimate the area from the stick diagram for λ = 90 nm.

8. Complete the following questions. [10]


i. Identify the logic shown in Fig. 6.
ii. What function X and Y does this circuit realize?
iii. Design the circuit using n type domino logic.

Fig. 6

9. Design Pulsed Latches and Enabled Latches. Explain the operation of latches using waveforms. [10]

10.(a) Design a 16-bit adder using 4-bit Carry Look ahead Adder. Discuss the limitation in direct realization [10]
16-bit Carry Look ahead Adder.

OR

10.(b) Discuss in detail about the design and working of 4-bit Barrel shifter. [10]



Page 3 of 3

You might also like