TCNT2000

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Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
A E FEATURES
• Package type: SMD
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 3.4 x 2.7 x 1.5
• Operating range within > 20 % relative collector
17091-2 current: 0.2 mm to 5 mm
Cath Coll • Emitter wavelength: 940 nm
Top view
• Moisture sensitivity level (MSL): 3
DESCRIPTION • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
The TCNT2000 is a reflective sensor in a miniature SMD
package. It has a compact construction where the emitting APPLICATIONS
light source and the detector are arranged in the same
plane. The operating infrared wavelength is 940 nm. The • Position sensor
detector consists of a silicon phototransistor. The sensor • Optical switch
analog output signal (photo current) is triggered by • Optical encoder (e.g. disc and tape drives for DVD and/or
detection of reflected infrared light from a close by object. camera applications)
The sensor has a built in daylight blocking filter, which • Object detection (e.g. paper presence in printer and copy
greatly suppresses disturbing ambient light and therefore machines)
increases signal to noise ratio.

PRODUCT SUMMARY
DISTANCE FOR DISTANCE RANGE FOR TYPICAL OUTPUT CURRENT
DAYLIGHT BLOCKING
PART NUMBER MAXIMUM CTRrel (1) RELATIVE Iout > 20 % UNDER TEST (2) FILTER INTEGRATED
(mm) (mm) (mA)
TCNT2000 1 0.2 to 5 1.5 Yes
Notes
(1) CTR: current transfere ratio, I /I
out in
(2) Conditions like in table basic charactristics/sensors

ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME (1) REMARKS
TCNT2000 Tape and reel MOQ: 1000 pcs Drypack, MSL 3
Note
(1) MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT (EMITTER)
Reverse voltage VR 5 V
Forward current IF 100 mA
Forward surge current tp ≤ 100 μs IFSM 500 mA
OUTPUT (DETECTOR)
Collector emitter breakdown voltage V(BR)CEO 20 V
Emitter collector voltage VECO 7 V
Collector current IC 20 mA
SENSOR
Total power dissipation Tamb ≤ 25 °C Ptot 170 mW
Ambient temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature In accordance with fig. 11 Tsd 260 °C

Rev. 1.2, 17-Aug-12 1 Document Number: 83796

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TCNT2000
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS

180 120

160
PV - Power Dissipation (mW)

100

IF - Forward Current (mA)

140

120 80
RthJA = 285 K/W
100
60
80 RthJA = 285 K/W

60 40

40
20
20

0 0
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT (EMITTER)
IF = 20 mA 1.25 1.45
Forward voltage VF V
IF = 100 mA 1.4 1.7
Temperature coefficient of VF IF = 20 mA TKVF - 1.0 mV/K
Peak wavelength IF = 100 mA λP 940 nm
Reverse current VR = 5 V IR 10 μA
OUTPUT (DETECTOR)
Collector emitter breakdown voltage IC = 0.1 mA, E = 0 V(BR)CEO 20 V
Emitter collector voltage IE = 100 μA, E = 0 VECO 7 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1 30 nA
SENSOR
Collector current VCE = 5 V, IF = 20 mA, d = 1 mm IC 0.4 1.5 3.0 mA
Current transfer ratio IC/IF, d = 1 mm, VCE = 5 V CTR 4 %
Rise time IC = 0.8 mA, VCE = 5 V, RL = 100 Ω tr 10 70 μs
Fall time IC = 0.8 mA, VCE = 5 V, RL = 100 Ω tf 15 70 μs

Object:
Flat Mirror
d = working distance 1 mm

15190

Fig. 3 - Test Circuit

Rev. 1.2, 17-Aug-12 2 Document Number: 83796

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TCNT2000
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Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

100 8000
Tamb = 25 °C Tamb = 25 °C
20 ms pulse 7000 VCE = 5 V
IF - Forward Current (mA)

IC - Collector Current (μA)

d = 1 mm
6000

5000

10 4000

3000

2000

1000

1 0
0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 60 70 80 90 100
VF - Forward Voltage (V) IF - Forward Current (mA)

Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Collector Current vs. Forward Current

1.5 130
VCE = 5 V

IC rel - Relative Collector Current (%)

120 IF = 10 mA
1.4
VF - Forward Voltage (V)

IF = 20 mA
110 IF = 50 mA

1.3
100
IF = 10 mA
90
1.2
IF = 20 mA
80
IF = 50 mA
1.1
70

1.0 60
- 60 - 40 - 20 0 20 40 60 80 100 120 140 - 60 - 40 - 20 0 20 40 60 80 100 120 140
Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C)

Fig. 5 - Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Collector Current vs. Ambient Temperature

10 000 100
VCE = 20 V
IC rel - Relative Collector Current (%)
ICEO - Collector Dark Current (nA)

90 IF = 50 mA
VCE = 5 V
1000 80 Tamb = 25 °C
70
100 60
50
10 40
30
1 20
10
0.1 0
0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8
Tamb - Ambient Temperature (°C) d - Distance (mm)

Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 9 - Relative Collector Current vs. Distance

Rev. 1.2, 17-Aug-12 3 Document Number: 83796

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TCNT2000
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Vishay Semiconductors
REFLOW SOLDER PROFILE
110
IC rel - Relative Collector Current (%)

IF = 20 mA
100 300
VCE = 5 V
90 Tamb = 25 °C
max. 260 °C
80 x - direction 255 °C
250 245 °C
y - direction 240 °C
70
217 °C
60

Temperature (°C)
200
50 max. 30 s
y - direction
40
150
30
max. 120 s max. 100 s
20
100
10
x - direction
0
-3 -2 -1 0 1 2 3 4 50 max. ramp up 3 °C/s max. ramp down 6 °C/s
s - Displacement (mm)
0
0 50 100 150 200 250 300
Fig. 10 - Relative Collector Current vs. Displacement
19841 Time (s)
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PRECAUTIONS FOR USE
1. Over-current-proof
Customer must apply resistors for protection, otherwise
slight voltage shift will cause big current change (Burn out
will happen).
2. Storage
2.1. Storage temperature and rel. humidity conditions are:
5 °C to 30 °C, RH 60
2.2. Floor life must not exceed 168 h, acc. to JEDEC level 3,
J-STD-020.
Once the package is opened, the products should be used
within 168 h. Otherwise, they should be kept in a damp proof
box with desiccant.
Considering tape life, we suggest to use products within one
year from production date.
2.3 If opened more than 168 h in an atmosphere 5 °C to
30 °C, RH 60 %, devices should be treated at
60 °C ± 5 °C for 15 h.
2.4 If humidity indicator in the package shows pink color
(normal blue), then devices should be treated with the
same conditions as 2.3.

Rev. 1.2, 17-Aug-12 4 Document Number: 83796

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 TCNT2000
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters

TAPE AND REEL DIMENSIONS in millimeters: TCNT2000

1000 pcs/reel

Reel Dimensions Tape Dimensions

Rev. 1.2, 17-Aug-12 5 Document Number: 83796

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12 1 Document Number: 91000