This document reports on an experiment to construct and simulate the I-V characteristic curves of a resistor, diode, and NPN transistor. The resistor curve showed that as voltage increases, current decreases per Ohm's law. The diode curve in forward bias showed low current and voltage initially, then a rapid increase. In reverse bias the diode blocks most current. The transistor curve showed collector current increasing with input voltage while base current remained constant.
This document reports on an experiment to construct and simulate the I-V characteristic curves of a resistor, diode, and NPN transistor. The resistor curve showed that as voltage increases, current decreases per Ohm's law. The diode curve in forward bias showed low current and voltage initially, then a rapid increase. In reverse bias the diode blocks most current. The transistor curve showed collector current increasing with input voltage while base current remained constant.
College of Engineering, Computer Studies & Technology
ECE5 SATURDAY 10:30PM – 1:30 PM PHYSLAB
Section Day Time Room
COMM2LAB: Transmission Media and Antenna System Laboratory
Experiment Report No. 3 I-V CURVE PARTS
August 25, 2018 September 1, 2018
Date Performed Date Submitted
Remarks Grade
FATIGA, Fritz Joseph D.
BSECE / 5th Year Group No. 2
Engr. Carl John S. Carlos
Instructor SCHEMATIC DIAGRAM
Figure 1: I-V Curve using Resistor Circuit
Figure 2: I-V Curve using Diode Circuit
Figure 3: I-V Curve using 2N222 Transistor
OUTPUT
Graph 1: The Plotted Waveform of I-V
Curve resistor; V(vin) in green ; I(r1) in Blue ; I(V1) in Red Graph 2: The Plotted Waveform of I-V Curve of Diode; V(Vin) in Green; I(D2) in Blue; I(v1) in Red (FORWARD BIAS)
Graph 3: The Plotted Characteristic
curve of Diode in Reverse Bias Graph 4: The Plotted Waveform of I-V Curve of a NPN Transistor; V(Vce) in Green; Ic(Q1) in Red; Ib(Q1) in Blue ; Ie(Q1) in Violet INTERPRETATION
This activity was about constructing
and simulating the I-V characteristic curve of a Resistor, a Diode and NPN Transistor. Resistor The first part is constructing the circuit, a DC source is connected in series to a 1k-ohm resistor, and the DC source is set with 0v source. To gather the data of the characteristic curve, we have simulated it with DC sweep linearly with the setting .dc(V1 0 10v 1v) in which start to sweep with 0v up to 10v with an increment of 1v. The plotted Waveform shows that as the voltage increase, the value of the current decrease. These can be proven according to the ohm’s law that states that the current through a conductor between two points is directly proportional to the voltage across the two points.
Diode
To record the characteristic curve of
the diode, we just replaced the Resistor with a diode that is placed in forward biased. We set the DC sweep value to .dc( V1 0 550mV 750mV 10mV) where the starting input voltage is 550mv then stop value is 750mv with increment of 10mv. As shown in the graph 2, we have the characteristic curve of the Diode with its current. To further explain, when the diode is forward biased, anode positive with respect to the cathode, a forward or positive current passes through the diode and operates in the top right quadrant of its I-V characteristics curves. Starting at the zero intersection, the curve increases gradually into the forward quadrant but the forward current and voltage are extremely small. When the forward voltage exceeds the diodes P-N junctions’ internal barrier voltage, which for silicon is about 0.7 volts, avalanche occurs and the forward current increases rapidly for a very small increase in voltage producing a non- linear curve. The “knee” point on the forward curve.
Likewise, when the diode is reversed
biased, cathode positive with respect to the anode, the diode blocks current except for an extremely small leakage current, and operates in the lower left quadrant of its I-V characteristic curves. The diode continues to block current flow through it until the reverse voltage across the diode becomes greater than its breakdown voltage point resulting in a sudden increase in reverse current producing a fairly straight line downward curve as the voltage losses control. This reverse breakdown voltage point is used to good effect with Zener diodes.
Transistor
For constructing the I-V characteristic
curve of a transistor, we have used a 2N22 NPN transistor, we also have a current source connected to the base of the transistor with a 0A value and a DC source connected to the collector of the transistor as seen on Graph 4.Then we set the DC sweep setting for simulation in which the 1st source value is linearly sweep with 0 to 15v and increment of 10mV, then the 2nd source is the current source which is linearly sweep as well with a 0A to 100uA and increment of 10uA. In the plotted characteristic curve, as the Vinput is increases, so is the collector current, Ic, while the emitter current decreases in proportion to the collector current, then the Base current stays approximately constant with 0mA at 8v. CONCLUSION
In conclusion, the I-V Characteristic
Curves, also known as Current-Voltage Characteristic Curves or simply I-V curves of an electrical device or component, are a set of graphical curves which are used to define its operation within an electrical circuit. As its name suggests, I- V characteristic curves show the relationship between the current flowing through an electronic device and the applied voltage across its terminals. It is generally used as a tool to determine and understand the basic parameters of a component or device and which can also be used to mathematically model its behavior within an electronic circuit. In the Resistor, I have learned the basic relationship of voltage to current as the resistance is constant, to simplify the learn things from ohm’s Law. In the Diode, diode are non-linear and very different to that of the previous resistors linear I-V curves as their electrical characteristics are different. It is observed that the current is constant at below barrier potential and would only operate if it is forward biased. Lastly, the characteristic curve of the transistor shows how the collector current, IC, varies with the Collector- Emitter voltage, VCE, for a specific fixed value of the Base current, IB. NPN transistor is largely controlled by the current flowing into the base, positive current. For the usual collector-emitter voltage drops , the active region, the collector current IC is nearly independent of the collector-emitter voltage ,VVCE, and instead depends on the base current IB. Usually more voltage produces to more current, but in here the current only increases slightly with increasing voltage input.