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Isc BU2520DX: Isc Silicon NPN Power Transistor

The BU2520DX is a high switching speed, high voltage silicon NPN power transistor from INCHANGE Semiconductor. It is intended for use in horizontal deflection circuits of large screen color TV receivers. The transistor has absolute maximum ratings including a collector-emitter voltage of 800V and collector current of 10A continuous and 25A peak. It also has thermal and electrical characteristics specified such as a junction to case thermal resistance of 2.8 K/W and DC current gain ranging from 13 to 9.5 depending on collector current and voltage.

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60 views3 pages

Isc BU2520DX: Isc Silicon NPN Power Transistor

The BU2520DX is a high switching speed, high voltage silicon NPN power transistor from INCHANGE Semiconductor. It is intended for use in horizontal deflection circuits of large screen color TV receivers. The transistor has absolute maximum ratings including a collector-emitter voltage of 800V and collector current of 10A continuous and 25A peak. It also has thermal and electrical characteristics specified such as a junction to case thermal resistance of 2.8 K/W and DC current gain ranging from 13 to 9.5 depending on collector current and voltage.

Uploaded by

Darknezz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU2520DX

DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode

APPLICATIONS
·For use in horizontal deflection circuits of large screen
color TV receivers

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 7.5 V

IC Collector Current-Continuous 10 A

ICM Collector Current-peak 25 A

IB Base Current-Continuous 6 A

IBM Base Current-peak 9 A

Collector Power Dissipation


PC 45 W
@TC=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 2.8 K/W

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU2520DX

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 6A ;IB= 1.2A 1.1 V

VCE= BVCES; VBE= 0 1.0


ICES Collector Cutoff Current mA
VCE= BVCES; VBE= 0;TC=125℃ 2.0

IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 100 300 mA

hFE-1 DC Current Gain IC= 1A ; VCE= 5V 13

hFE-2 DC Current Gain IC= 6A ; VCE= 5V 5 7 9.5

VECF C-E Diode Forward Voltage IF= 6A 2.2 V

COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 115 pF

Switching times

tstg Storage Time 5.5 μs


IC= 6A , IB(end)= 1.0A; LB= 5.3μH
-VBB= 4V; (-dIB/dt= 0.8A/μs)
tf Fall Time 0.5 μs

isc website：www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor BU2520DX

isc website：www.iscsemi.cn 3

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