DRAM Component Part Numbering System: MT 42 A 128M16 D1 KL - 25 IT ES:A
The document describes Micron's part numbering system for DRAM components such as DDR5, DDR4, DDR3, DDR2, DDR, and mobile memory. It provides details on what each section of the part number represents, including product family, production status, operating temperatures, and more.
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DRAM Component Part Numbering System: MT 42 A 128M16 D1 KL - 25 IT ES:A
The document describes Micron's part numbering system for DRAM components such as DDR5, DDR4, DDR3, DDR2, DDR, and mobile memory. It provides details on what each section of the part number represents, including product family, production status, operating temperatures, and more.
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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DRAM Component Part Numbering System
The part numbering system is available at www.micron.com/numbering
DDR5/DDR4/DDR3/DDR2/DDR/SDRAM, Mobile LPDDR4/LPDDR3/LPDDR2/LPDDR/LPSDR, RLDRAM® & GDDR6/GDDR5X/GDDR5 Memory MT 42 A 128M16 D1 KL - 25 IT ES :A Micron Technology Die Revision Designator
Product Family Production Status
40 = DDR4 SDRAM ES = Engineering sample 41 = DDR3 SDRAM MS = Mechanical sample 42 = Mobile LPDDR2 Blank = Production 44 = RLDRAM 3 46 = DDR SDRAM/Mobile LPDDR Operating Temperatures 47 = DDR2 SDRAM Blank = Commercial temperature 48 = SDRAM/Mobile LPSDR IT** = Industrial temperature 49 = RLDRAM (1 & 2) AT = Automotive temperature 51 = GDDR5 WT= Wireless temperature 52 = Mobile LPDDR3 XT= Wide temperature 53 = Mobile LPDDR4 (2x16 ch/die) UT= Ultra temperature 58 = GDDR5X **The number one (1) and the capital letter “I” utilize the same laser mark—“I” 60 = DDR5 SDRAM 61 = GDDR6 Special Options (Multiple processing codes are separated by a space and are listed in hierarchical order) Voltage A = Automotive A = 1.2V VDD G = Graphics AX = 1.275V VDD L = Low power B = 1.1V VDD M = Reduced standby C = 5.0V VCC X = Product Longevity Program (Automotive & Industrial only) D = 1.1V VDD, 0.6V VDDQ G = 3.0V VDD Access/Cycle Time t H = 1.8V VDD DRAM Speed Grade RAC Access HC = 1.8V VDD, 1.2V I/O Technology Mark Time J = 1.5V VDD All DRAM -0 Untested K = 1.35V VDD -A Untested L = 1.2V VDD LC = 3.3V VDD DRAM Speed Grade MAX Clock PC Targets M = 1.25V VDD TechnologyMark Frequency CL-tRCD-tRP N = 1.0V VDD DDR4 -093E 1067 MHz 15-15-15 R = 1.55V VDD SDRAM -093H 1067 MHz 18-15-15 V = 2.5V VDD -083 1200 MHz 17-17-17 -083E 1200 MHz 16-16-16 Component Configuration -083H 1200 MHz 20-18-18 Depth, Width -083J 1200 MHz 19-17-17 Blank = Bits -075 1333 MHz 19-19-19 K = Kilobits -075E 1333 MHz 18-18-18 M = Megabits -075H 1333 MHz 22-19-19 G = Gigabits -068 1467 MHz 21-21-21 -068E 1467 MHz 20-20-20 Device Versions -062E 1600 MHz 22-22-22 Alphanumeric character(s) specified by individual datasheet -062H 1600 MHz 26-22-22 DDR3 -15E 667 MHz 9-9-9 Mobile devices SDRAM -125 800 MHz 11-11-11 D1 = Single die (LPDDR2, LPDDR3, LPDDR4) -125E 800 MHz 10-10-10 LF = Single die (LPDDR) -107 933 MHz 13-13-13 LG = Single die, reduced page-size addressing (LPDDR) -093 1067 MHz 14-14-14 D2 = 2-die stack (LPDDR2, LPDDR3, LPDDR4) DDR2 -3 333 MHz 5-5-5 L2 = 2-die stack (LPDDR) SDRAM -25 400 MHz 6-6-6 D4 = 4-die stack (LPDDR2, LPDDR3, LPDDR4) -25E 400 MHz 5-5-5 L4 = 4-die stack (LPDDR) -187E 533 MHz 7-7-7 D6 = 6-die stack (LPDDR3) DDR SDRAM -75 133 MHz 2.5-3-3 D8 = 8-die stack (LPDDR4) SDRAM -6T 167 MHz 2.5-3-3 -5B 200 MHz 3-3-3 RLDRAM only SDRAM -75 133 MHz 3-3-3 Blank = Common I/O -7E 133 MHz 2-2-2 C = Separate I/O -6A 167 MHz 3-3-3 -5 200 MHz 3-3-3 GDDR5X only Mobile -046 2133 MHz Blank = Initial version LPDDR4 -053 1866 MHz 1, 2, 3, etc. = Sequential number for product variations -062 1600 MHz -075 1333 MHz DRAM Package Codes -093 1066 MHz Codes range from 1-3 characters depending on the product. -125 800 MHz Please refer to the datasheet for package details. -125 800 MHz -18 533 MHz -375 266 MHz Mobile -15 667 MHz 10-10-10 LPDDR3 -125 800 MHz 12-12-12 Mobile -18 533 MHz LPDDR2 -25 400 MHz -3 333 MHz -37 266 MHz -5 200 MHz Mobile -75 133 MHz LPDDR -6 167 MHz -54 185 MHz -5 200 MHz -48 208 MHz Mobile -8 125 MHz LPSDR -75 133 MHz -6 167 MHz RLDRAM -5 200 MHz 1&2 -33 300 MHz -25 400 MHz with tRC 20ns -25E 400 MHz with tRC 15ns -18 533 MHz RLDRAM 3 -125 800 MHz with tRC (MIN) 12ns -125E 800 MHz with tRC (MIN) 10ns -107 933 MHz with tRC (MIN) 10ns -107E 933 MHz with tRC (MIN) 8ns -093 1067 MHz with tRC (MIN) 10ns -093E 1067 MHz with tRC (MIN) 8ns GDDR5 Data Rate -50 1.25 GHz 5 Gb/s -60 1.5 GHz 6 Gb/s -70 1.75 GHz 7 Gb/s -80 2.0 GHz 8 Gb/s GDDR5X Data Rate -100 1.25 GHz 10 Gb/s -110 1.375 GHz 11 Gb/s -120 1.5 GHz 12 Gb/s -140 1.75 GHz 14 Gb/s GDDR6 Data Rate -10 1.25 GHz 10 Gb/s -12 1.5 GHz 12 Gb/s -13 1.625 GHz 13 Gb/s -14 1.75 GHz 14 Gb/s
Micron, the Micron logo, and RLDRAM are trademarks of Micron Technology, Inc. Products and specifications are subject to change without notice. Dates are estimates only.