EE-231 Electronics I

Engr. Dr. Hadeed Ahmed Sher

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, TOPI 23460
[email protected]

February 9, 2018

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 Overview

1 Transition and diffusion capacitance

2 Diode datasheet
Datasheet of 1N4148

3 Zener diode

4 Load line analysis

Example

5 Connection configurations
Series configuration
Parallel configuration

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 Transition and diffusion capacitance

Transition and diffusion capacitance

There are two kinds of capacitances.
At the depletion layer called transition capacitance CT
Diffusion capacitance CD
The junction or transition capacitance is formed due to depletion layer
separating the charges of p and n material.
C (0)
CT = (1)
(1 + VVKR )n
Diffusion current is in forward biased region and is due to charge injected
by the source.

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 Diode datasheet

What are datasheets for ?

The datasheets provide useful information about the device rating and
their proper use.
Usually the information provided includes
Maximum stress levels on the device.
The forward voltage VF . It is denoted as VK in the textbook.
Maximum forward current IF . It is denoted as ID in the textbook.
The reverse saturation current IR . It is denoted as IS in the textbook.
The peak inverse rating(PIV) or the reverse voltage rating. It is
denoted as VBV in the textbook.
Operating temperature range.
Capacitance levels.
Reverse recovery time (Significant importance in power electronics)
Dimensions for PCB design.
Every kind of diode has similar information. In these resources i will
discuss only Si diode.
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 Diode datasheet Datasheet of 1N4148

Datasheet of 1N4148

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 Diode datasheet Datasheet of 1N4148

Datasheet of 1N4148

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 Diode datasheet Datasheet of 1N4148

Datasheet of 1N4148

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 Diode datasheet Datasheet of 1N4148

Datasheet of 1N4148

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 Zener diode

Zener diode
Zener diode are special purpose diode that operate in reverse biased region
near the zener voltage.
In zener diode the direction of conduction is opposite.
The zener region depends on the doping and the type of material.

The zener diode is heavily doped for smaller zener voltage and vice versa.
If the current is limit then power dissipation of device is controlled and
hence the process of reverse breakdown is reversible.
Under forward biased condition it can be used as an ordinary diode.
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 Zener diode

Zener diode
Heavy doping means that the electric field has access to covalent bond
which it can rupture.
Under the zener breakdown region the voltage remains more or less
constant with varying current levels. This means that it can act as a
voltage source and can therefore stabilize the voltage across the load.

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 Zener diode

Zener diode
Since a zener is seldom used as an ordinary diode therefore only reverse
region characteristics are of interest.
The slope along the zener region can be extended at angle slightly less
than 90 to approximate a dynamic resistance.
A very popular application of a zener diode is a zener regulator which is
used to maintain fixed voltage across a load.
Let Vs and Rs be the thevenin of a rectifier circuit and EL be the load
resistance with a zener in parallel.
replace zener with equivalent circuit (Vz and Rz). Then using KCL
Vs − VL VL − VZ VL
Is = = Iz + IL = + (2)
Rs Rz RL
This can be simplified as
Vs Vz
Rs + Rz
VL = 1 1 1
(3)
Rs + RL + Rz

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 Zener diode

Zener diode

Suppose the Rs =1000 andRL =2000 and Rz =200 and Vz =10V then using
(3)for a Vs of 16V the output VL =10.02V and for VS of 24V the
VL =10.17V. Therefore, for a 50% change in input voltage the load voltage
change is only 1.5%.
Zener regulators are not used for high current applications and therefore
their use is limited.

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 Load line analysis

Load line analysis

Consider the simplest diode circuit shown.
The characteristic curve is superimposed on the IV plane of the network.
The intersection of these two curves solve the circuit and provides the
quiescent point Q. The selected diode must have IF greater than the value
on y axis and VBV greater than x axis value

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 Load line analysis Example

Example2.1
For the circuit shown find the VDQ ,
IDQ and VR . VD = E = 10V (5)
Draw a straight line between these
points and the value of VDQ =0.78V,
IDQ =18.5mV and VR .

VR = E − VD = 10 − 0.78 = 9.22V
(6)
Using the Q point values the DC
resistance can be computed as
VDQ
RD = = 42.16Ω (7)
IDQ

Replacing diode with RD the same

E
ID = = 20mA (4) values are computed.
R
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 Load line analysis Example

Example 2.1 using ideal and simplified models

Figure: Results are far from piecewise

linear model
Figure: Results are similar to that of
piecewise linear model
Ideal model are used only if the
system voltage are very high.

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 Connection configurations Series configuration

Series configuration

For the circuit shown find VD ,VR and ID . Using the simplified equivalent
method

VD =0.7V, VR =8-0.7=7.3 and ID =7.3/2.2k=3.32mA.

If the diode is reversed then VD =8V, VR =0 and ID =0.

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 Connection configurations Series configuration

Example 2.6

Determine the VD ,VR and ID .

In this circuit although the positive of the DC

supply is connected to anode, the threshold is not
crossed hence ID =0, VR =0 and VD =0.5V

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 Connection configurations Series configuration

Example 2.8

Determine the VD2 ,VR and ID .

In this circuit DC supply with one diode is

connected such that it results in reverse bias.
Therefore, the VD2 =20V,VR =0 and ID =0.
Note that D1 is no-bias.

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 Connection configurations Series configuration

Example 2.9

Determine the I, V1 ,V2 and Vo .

V1 = IR1 = 9.73V (9)

V2 = IR2 = 4.55V (10)

This circuit has two sources. Current Using KVL the output voltage is
I can be calculated using ohms law as
Vo = 4.55 − 5 = 0.5V (11)
10 + 5 − 0.7
I = = 2.07mA (8)
4.7k + 2.2k

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 Connection configurations Parallel configuration

Parallel configuration
For the circuit shown find Vo ,I, ID1 and ID2 .

Both the diodes are forward biased and therefore Vo is 0.7V.

E − VD
I =
= 28.18mA (12)
R
Current will divide equally therefore ID1 =ID2 =14.07mA.
Think
What if one diode is Ge ?
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