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Lab 6

The experiment aimed to characterize the input and output properties of an NPN transistor in common emitter configuration. Various readings were taken by applying voltages to the base and collector terminals and measuring the corresponding currents. The input characteristics showed increasing base current with rising base-emitter voltage. The output characteristics exhibited rising collector current and falling collector-emitter voltage with increasing collector voltage for different fixed base currents.

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Muhammad Junaid Tabassum
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98 views

Lab 6

The experiment aimed to characterize the input and output properties of an NPN transistor in common emitter configuration. Various readings were taken by applying voltages to the base and collector terminals and measuring the corresponding currents. The input characteristics showed increasing base current with rising base-emitter voltage. The output characteristics exhibited rising collector current and falling collector-emitter voltage with increasing collector voltage for different fixed base currents.

Uploaded by

Muhammad Junaid Tabassum
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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EXPERIMENT No 7

Objective: To draw output and input characteristics of an NPN


transistor in common emitter configuration.

Apparatus:
DC Power Supplies 02
NPN Transistor 01
Digital Multimeter 01
Resistors
Circuit Diagram:

Rc
c

RB

Vcc
VBB

Procedure:
1. Take an NPN transistor.
2. Check its base emitter and collector with DMM .Fix it on project board
3. Make a circuit as circuit diagram .Note different readings for input and output
characteristics.
Observations:
INPUT CHARACTRISTICS

Sr # VBB VBE IB(uA)


1 0.202 0.202 0.00
2 0.605 0.605 0.00
3 01.00 0.704 29.60
4 01.40 0.706 69.40
5 01.80 0.707 1093
6 2.512 0.709 1803

OUTPUT CHARECTRISTICS
VCC 2 4 6 8 10
V

IB (uA) 10 10 10 10 10

VCE(v) 0.230 2.092 3.831 5.850 7.760


VRC(V) 1.770 1.908 2.116 2.150 2.240
IC(mA) 1.770 1.908 2.116 2.150 2.240
IB (uA) 20 20 20 20 20

VCE(v) 0.146 0.504 2.427 4.360 6.330


VRC(V) 1.854 3.496 3.573 3.640 3.670
IC(mA) 1.854 3.496 3.573 3.640 3.670
IB (uA) 30 30 30 30 30

VCE(v) 0.131 0.179 0.815 2.662 4.510


VRC(v) 1.869 3.821 5.185 5.338 5.490
IC(mA) 1.869 3.821 5.185 5.338 5.490
Conclusions:

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