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HW1

This document contains 5 questions related to transistor and circuit design. Question 1 asks to show that the current through two transistors in series is equal to the current through a single longer transistor using the Chockley model. Question 2 asks for the gate capacitance of a transistor given its dimensions and oxide thickness. Question 3 asks how much the threshold voltage changes for a transistor given operating conditions and doping information. Question 4 asks to find the threshold leakage current of an inverter. Question 5 has multiple parts asking how saturation current and subthreshold leakage currents would change if the threshold voltage was reduced.

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317 views

HW1

This document contains 5 questions related to transistor and circuit design. Question 1 asks to show that the current through two transistors in series is equal to the current through a single longer transistor using the Chockley model. Question 2 asks for the gate capacitance of a transistor given its dimensions and oxide thickness. Question 3 asks how much the threshold voltage changes for a transistor given operating conditions and doping information. Question 4 asks to find the threshold leakage current of an inverter. Question 5 has multiple parts asking how saturation current and subthreshold leakage currents would change if the threshold voltage was reduced.

Uploaded by

priyadarshini212007
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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1.

Show that the current through two transistors in series is equal to the current
through a single transistor of twice the length if the transistors are well described
by the Chockley model. Specifically, show that IDS1 = IDS2 in Fig. 1 when the
transistors are in their linear region: VDS < VDD-Vt, VDD > Vt (this is also true in
saturation).

2. A 90 nm long transistor has a gate oxide thickness of 16 A. What is the gate


capacitance per micron of width?
3. Consider the nMOS transistor in a 0.6 um process with gate oxide thickness of
100 A. The doping level is NA = 2.10-3 cm-3 and the nominal threshold voltage is is
0.7 V. The body effect is tied to ground with a substrate contact. How much does
the threshold change at room temperature if the source is at 4 V instead of 0?
4. Find the threshold leakage current of an inverter at room temperature if the input
A = 0. Let n= 2 p = 1mA/V2, n = 1.0, and Vt = 0.4 V. Assume the body effect
and DIBL coefficients are = = 0.
5. An nMOS transistor has a threshold voltage of 0.4 V and a supply voltage of
VDD = 1.2 V. A circuit designer is evaluating a proposal to reduce Vt by 100 mV
to obtain faster transistors.
a) By what factor would the saturation current increase (at Vgs = Vds = VDD) if
the transistors were ideal?
b) By what factor would the subthreshold leakage current increase at room
temperature at Vgs = 0? Assume n = 1.4.
c) By what factor would the subthreshold leakage current increase at 120 C?
Assume the threshold voltage is independent of temperature.

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