黃光
黃光
Objectives
High Resolution
High PR Sensitivity
Precision Alignment
Precise Process Parameters Control
Low Defect Density
Step of Lithography
Wafer clean
Pre-bake
Photoresist spin coating
Soft bake
Alignment and exposure
Post exposure bake(PEB)
Development
Hard bake
Pattern inspection
Negative and Positive Photoresists
Photoresist
Substrate
UV light
Mask/reticle
Photoresist
Exposure
Substrate
Negative
Photoresist
Substrate After
Positive Development
Photoresist
Substrate
Photoresist Composition
Polymer
Solvents
Sensitizers
Additives
Polymer
Solid organic material
Transfers designed pattern to wafer surface
Changes solubility due to photochemical reaction when
exposed to UV light.
Positive PR: from insoluble to soluble
Negative PR: from soluble to insoluble
Solvent
Dissolves polymers into liquid
Allow application of thin PR layers by spinning.
Sensitizers
Controls and/or modifies photochemical reaction of
resist during exposure.
Determines exposure time and intensity
Additives
Various added chemical to achieve desired process
results, such as dyes to reduce reflection.
Negative Photoresist
Disadvantages
Polymer absorbs the development solvent
Poor resolution due to PR swelling
Environmental and safety issues due to the main
solvents xylene.
Positive Photoresist