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MESFET

MESFET stands for metal–semiconductor field-effect transistor. It is quite similar to a JFET in construction and terminology, but uses a Schottky junction instead of a p-n junction for its gate. MESFETs are commonly used for microwave frequency communications and radar due to their high frequency performance. They are usually constructed using compound semiconductors like GaAs, InP, or SiC.

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234 views2 pages

MESFET

MESFET stands for metal–semiconductor field-effect transistor. It is quite similar to a JFET in construction and terminology, but uses a Schottky junction instead of a p-n junction for its gate. MESFETs are commonly used for microwave frequency communications and radar due to their high frequency performance. They are usually constructed using compound semiconductors like GaAs, InP, or SiC.

Uploaded by

Karthik Kichu
Copyright
© © All Rights Reserved
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MESFET

MESFET stands for metalsemiconductor eld-eect ten producing a mushroom-like prole in cross section.
transistor. It is quite similar to a JFET in construction
and terminology. The dierence is that instead of using a
p-n junction for a gate, a Schottky (metal-semiconductor) 2 Application
junction is used. MESFETs are usually constructed
in compound semiconductor technologies lacking high
Numerous MESFET fabrication possibilities have been
quality surface passivation such as GaAs, InP, or SiC, and
explored for a wide variety of semiconductor systems.
are faster but more expensive than silicon-based JFETs
Some of the main application areas are:
or MOSFETs. Production MESFETs are operated up
to approximately 45 GHz,[1] and are commonly used for
microwave frequency communications and radar. The Military communications
rst MESFETs were developed in 1966, and a year later
As front end low noise amplier of microwave re-
their extremely high frequency RF microwave perfor-
ceivers in both military radar devices and commu-
mance was demonstrated.[2]
nication.

Commercial optoelectronics
1 Functional Architecture Satellite communications

As power amplier for output stage of microwave


links.

As a power oscillator.

3 See also
MESFET schematic.
Field eect transistor
The MESFET diers from the common insulated gate
FET or MOSFET in that there is no insulator under the High electron mobility transistor (HEMT)
gate over the active switching region. This implies that Heterojunction bipolar transistor
the MESFET gate should, in transistor mode, be biased
such that one does not have a forward-conducting metal
semiconductor diode instead of a reversed-biased deple-
tion zone controlling the underlying channel. While this
4 References
restriction inhibits certain circuit possibilities as the gate
must remain reverse-biased and cannot therefore exceed [1] Lepkowski, W.; Wilk, S.J.; Thornton, T.J. (2009), 45
GHz Silicon MESFETs on a 0.15 m SOI CMOS Pro-
a certain voltage of forward bias, MESFETs analog and
cess, SOI Conference, 2009 IEEE International, Foster
digital devices work reasonably well if kept within the City, CA: 12, ISBN 978-1-4244-4256-0, ISSN 1078-
connes of design limits. The most critical aspect of the 621X
design is the gate metal extent over the switching region.
Generally the narrower the gate modulated carrier chan- [2] GaAs FET MESFET radio-electronics.com.
nel the better the frequency handling abilities, overall.
Spacing of the source and drain with respect to the gate,
and the lateral extent of the gate are important though
somewhat less critical design parameters. MESFET cur-
rent handling ability improves as the gate is elongated lat-
erally, keeping the active region constant, however is lim-
ited by phase shift along the gate due to the transmission
line eect. As a result, most production MESFETs use a
built up top layer of low resistance metal on the gate, of-

1
2 5 TEXT AND IMAGE SOURCES, CONTRIBUTORS, AND LICENSES

5 Text and image sources, contributors, and licenses


5.1 Text
MESFET Source: https://en.wikipedia.org/wiki/MESFET?oldid=761230282 Contributors: Mulad, Bemoeial, DocWatson42, Pjacobi,
Matt Britt, Hooperbloob, Skela, Rikimaru~enwiki, Gilliam, Hugo-cs, CyrilB, Rogerbrent, Dicklyon, CmdrObot, Was a bee, Thijs!bot,
Dawnseeker2000, AntiVandalBot, Kar.ma, Rod57, Billr wiki, Andy Dingley, SieBot, Calliopejen1, Laoris, Vcaeken, MenoBot, Brews
ohare, Arjayay, Addbot, MrOllie, Numbo3-bot, Yobot, AnomieBOT, Materialscientist, Maggyero, DrilBot, AndyHe829, EmausBot,
Dcirovic, Wbm1058, Avionix1, Hemlatak.elec, TheUnnamedNewbie, Nijoakim, Aygent543, KasparBot and Anonymous: 25

5.2 Images
File:MESFET.png Source: https://upload.wikimedia.org/wikipedia/commons/4/4c/MESFET.png License: CC BY-SA 3.0 Contributors:
Dr. W. Rutherford, Rutherford Research, http://www.rutherford-research.ca Original artist: Dr. W. Rutherford, Rutherford Research,
http://www.rutherford-research.ca

5.3 Content license


Creative Commons Attribution-Share Alike 3.0

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