Scribd
Upload
659 views

HW 2 S

The document provides calculations to determine various properties of an electron moving through silicon. It is given that the electron's drift velocity is 1/10 the thermal velocity. The calculations show that the electron will experience 209 collisions over a 1 μm region, requiring a voltage of 162 kV/m to produce the given drift velocity. A second calculation determines the electron current density in silicon with no electric field present, given the electron concentration varies linearly from 1017 to 6x1016 cm-3 over 2 μm.

Uploaded by

andy3939
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
659 views

HW 2 S

The document provides calculations to determine various properties of an electron moving through silicon. It is given that the electron's drift velocity is 1/10 the thermal velocity. The calculations show that the electron will experience 209 collisions over a 1 μm region, requiring a voltage of 162 kV/m to produce the given drift velocity. A second calculation determines the electron current density in silicon with no electric field present, given the electron concentration varies linearly from 1017 to 6x1016 cm-3 over 2 μm.

Uploaded by

andy3939
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

1.

8 An electron is moving in a piece of lightly doped silicon under an applied field at 27oC so
that its drift velocity is one-tenth of the thermal velocity. Calculate the average number of
collisions it will experience in traversing by drift a region 1 m wide. What is the voltage
applied across this region?
The drift velocity is obtained by calculating the thermal velocity using the effective mass for
conductivity calculations:
v
1 3kT
1 3 1.38 10 23 300
= 22.9 km/s
v d = th =
=
10 10 me*
10
0.26 9.1 10 31
The transist time is obtained from the length of the region divided by the drift velocity
L
10 6
= 43.7 ns
tr =
=
v d 22.9 10 3
The collision time is obtained from the mobility
m * 0.1414 0.26 9.1 10 31
= 0.21 ps
c = n e =
q
1.6 10 19
The number of collisions is therefore tr/c = 209
The electric field equals:
22.9 10 3
=162 kV/m
n
0.1414
and the applied voltage equals E x L = 0.162 V
E=

vd

1.10The electron concentration in a piece of uniform, lightly doped, n-type silicon at room
temperature varies linearly from 1017 cm-3 at x = 0 to 6 x 1016 cm-3 at x = 2 m. Electrons are
supplied to keep this concentration constant with time. Calculate the electron current density
in the silicon if no electric field is present. Assume n = 1000 cm2/V-s and T = 300 K.

dn
= 1.6 10 19 25.9 ( ) 2 10 20 = -828 A/cm2
dx
1.12(Dielectric relaxation in solids) Consider an homogenous one-carrier conductor of
conductivity and permittivity . Imagine a given distribution of the mobile charge density
(x, y, z; t = 0) in space at t = 0. We know the following facts from electro-magnetism,
provided we neglect diffusion current:
J = q n nE + qD n

r
r r
r rr
rr
d
D = , D = E , J = E , J =
dt

a) Show from these facts that (x, y, z; t) = (x, y, z; t = 0) e-t/(/). This result shows that
uncompensated charge cannot remain in a uniform conducting material, but must
accumulate at discontinuous surfaces or other places of non-uniformity.

Combining the equations yields:


rr
rr rr
d
J = E = D = =

dt
solving the resulting differential equation yields (x, y, z; t) = (x, y, z; t = 0) e-t/(/)
b) Compute the value of the dielectric relaxation time / for intrinsic silicon; for silicon
doped with 1016 donors cm-3; and for thermal SiO2 with = 10-16 (-cm)-1.
Intrinsic silicon:
= q ( n ni + p ni ) = 1.6 10 19 1.45 1010 (1414 + 470.5) = 4.37 x 10-6 (-cm)-1
the dielectric relaxation time equals / = (11.9 x 8.854 x 10-14)/ 4.37 x 10-6 = 2.41 ns
Doped silicon:
= q n N d = 1.6 10 19 1181 1016 = 1.89 (-cm)-1
the dielectric relaxation time equals / = (11.9 x 8.854 x 10-14)/ 1.89 = 0.56 ps
SiO2
the dielectric relaxation time equals / = (3.9 x 8.854 x 10-14)/ 10-16 = 3,453 s
1.18 The values in Tables 1.3 and 1.4 are not entirely consistent. To see that this is the case,
a) Calculate Eg(T = 300 K) using the equation in Table 1.4 and compare the result with Eg in
Table 1.3
7.02 10 4 T 3 / 2
= 1.157
E g ,1 (T ) = 1.16
T + 1108
Eg,2 (Table 1.3) = 1.124 eV
b) Use both values of Eg to calculate ni from Equation 1.1.25 with Nc and Nv as given in
Table 1.3
E g ,1
ni ,1 = N c N v exp(
) = 3.21 x 109 cm-3
2kT
E g ,2
ni , 2 = N c N v exp(
) = 6.13 x 109 cm-3
2kT
c) Calculate ni at 300 K using the temperature-variation formula in Table 1.4.
7014
) = 1.41 x 1010 cm-3
ni ,3 = 3.87 1016 T 3 / 2 exp(
T

You might also like