Introduction Homework (Power Electronics)
Introduction Homework (Power Electronics)
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Fig 2-6a.
SOLUTION
1. The interior structure characteristics that the Power Diode has which
enable it to stand high voltage and large current than diodes in
information electronic circuit are;
Power diodes have wide depletion layer that helps them to restrict
the maximum electric field strength below the impact ionization
level.
Power diodes have low space charge density in the depletion layer
which helps it to yield a wide depletion layer for a given
maximum Electric fields strength.
The Power Diode has an Intrinsic Region (n-drift region) between
the P and N junction making it 3 layer device. This intrinsic region
with a low impurity makes it possible for the Power Diode to
accommodate high voltage.
Power Diodes are Larger than information diodes offering large
current conducting area.
trv= 100ns
tfi= 200ns
Vd= 300V
Io = 4A
The average switching Power Loss P S in the switch due to all transitions in the
circuit in Fig 2-6a is approximated as
1
PS=2VdIofs(tc(on)+tc(off))..(i)
But equationally, tc(on) = tri + tfv(ii)
=100+50
=150ns
-9
-7
= 150x10 s=1.5x10 s
tc(off) =
trv + tfi..(iii)
=100+200
=300ns
=300x10-9s= 3x10-7s
Substituting the values of tc(on) and tc(off in equation (i),
PS=2VdIofs(1.5x10-7 + 3x10-7s)
1
PS=2VdIofs(4.5x10-7)
PS=2.25x10-7 VdIofs
For values of Vd =300V and Io=4A,
Power loss Ps as a function of frequency fs
Ps = 2.25x10-7x300x4xfs
Ps=2.7x10-4fs
The table below shows the corresponding power losses with the selected
values of frequencies in the range 25-100 kHz.
Frequency fs
in kHz
Power Ps in
Watts
25
35
45
55
65
75
85
6.75
9.45
95
100
25.65
27.00
Figure 1below shows the plot of the switching power loss Ps (in Watts) as a
function of frequency fs (in kHz) in a range of 25-100 kHz
30
25
20
15
10
0
0
20
40
60
80
100
120