PowerElectronicDevices

Power Electronic Devices

Outline
1.1 An introductory overview of power electronic devices
1.2 Uncontrolled devicepower diode
1.3 Half- controlled devicethyristor
1.4 Typical fully- controlled devices
1.5 Other new power electronic devices

PowerSemiconductorDevices:Categorization
Power Semiconductor Devices can be categorised into three groups:
Un-Controlled:
Diode
Fully-Controlled:
Power transistors: e.g. BJT, MOSFET, IGBT.
Semi-Controlled:
Thyristor (SCR).
GTO

PowerSemiconductorDevices:Categorization

POWER SEMICONDUCTOR DIODES (Un-Controlled)

General purpose power diodes
Fast recovery power diodes
Schottky power diodes
POWER TRANSISTOR (Fully-Controlled)
Power BJT
Power MOSFETs
Insulated Gate Bipolar Transistors (IGBTs)
POWER THYRISTOR (Semi-Controlled)
Silicon Controlled Rectifier (SCR)
Gate turn-off Thyristor (GTO)
Diacs, Triacs, Unijunction transistors, etc.
Complete range of family members (more than 15 members)

Features of power electronic devices

The electric power that power electronic device deals with is usually
much larger than that the information electronic device does.
Usually working in switching states to reduce power losses
O n -sta te

V o lta g e a c ro ss th e d e v ic e is 0

p = v i= 0

V =0
O ff-sta te

C u rre n t th ro u g h th e d e v ic e is 0

p = v i= 0

i= 0

Need to be controlled by information electronic circuits.

Very often, drive circuits are necessary to interface between
information circuits and power circuits.
Dissipated power loss usually larger than information electronic
devices special packaging and heat sink are necessary.

Configuration of systems using power electronic devices

Power electronic system:

Electric isolation:
optical, magnetic
Control circuit (in a broad sense)
Control
circuit

detection circuit
drive circuit

Power circuit (power

stage, main circuit)

Protection circuit is also very often used in power electronic system

especially for the expensive power semiconductors.

Terminals of a power electronic device

A power electronic
device usually has
a third terminal
control terminal
to control the
states of the device

A power electronic device

must have at least two
terminals to allow power
circuit current flow through.

Drive
Circuit

Control signal from drive circuit must be connected between the control
terminal and a fixed power circuit terminal (therefore called common
terminal

Uncontrolled device Power diode

Appearance

PN junction

Direction of
inner electric field
-

p region

Space charge
Region
(depletion region,
potential
barrier region)

n region

PN junction with voltage applied in the forward direction

+
+

+
+

- +
W
WO

PN junction with voltage applied in the reverse direction

Effective direction
of electronic field
-

+
+

+
+

WO
W

Construction of a practical power diode

Anode
+
+

n+ epi
-

19

-3

Na =10 cm

n- substrate
Cathode

10m
14 -3

Breakdown
Voltage dependent

19 -3

250m

Nd =10 cm
Nd =10 cm

Features different from low-power (information electronic) diodes

Larger size
Vertically oriented structure
n drift region (p-i-n diode)
Conductivity modulation
Junctioncapacitor
The positive and negative charge in the depletion region is variable with the
changing of external voltage. variable with the changing of external
voltage.
Junction capacitor C Junction capacitor CJ .
Potential barrier capacitor CB
Junction capacitor CJ
Diffusion capacitor CD

Junction capacitor influences the switching characteristics of

power diode.

Static characteristics of power diode

I
IF

V TO V F

Turn-off transient
IF

di F
dt

tF t 0

Turn- on transient
v

V FP

t rr
td

VF

iF

tf
t1 t 2
di R
dt
I RP
V RP

VR

VF

2V
0

t fr

PowerTransistors
Usedextensivelyincontrolcircuitsasboth
switchesandpoweramplifiers.
Asmallcurrentisusedcontrolamuchlarger
current.

 Currentgainisexpressedas:

or h FE

IC

IB

Powerisdissipatedanytimethereiscurrent
throughitandvoltageacrossit.

PD I C VCE

ClassAOperation
Biasedinthemiddleoftheoperationalrange.
Inputsignalincreasesordecreasesthebase
current.
Currentattheloadisinverted.
Load
R1
1.15K
+ V1
10V

C1
1uF
Q1
NPN
R2
100

ClassBOperation
Transistorisbiasedjustbelow0.7V
(operationalbiaspoint).
Onlyhalfasignalwillbeamplified.
Load
R1

+ V1
10V

C1
1uF
Q1
NPN
R2

ClassCOperation
Transistoriseitherfullysaturatedorcutoff.
Actsasaswitch.
Load

+ V1
10V

R1
220

Q1
NPN

PowerDissipation
Transistorsareratedontheamountofpower
theycandissipate.
Thegreaterthecurrentflowthroughthe
transistor,thegreaterpower,thusheat,it
mustdissipate.
Excessiveheatwillcausedamagetothe
device.

HeatSinks
Heatsinksareusedtodrawheatfromthe
device.Typicallymetalwithfinsforair
cooling.
HeatSinkcompoundisusedtoincrease
thermaltransfer.

InsulatingtheCase

Onmanypowertransistors,thecaseitselfis
connectedtothecollectorandmayneedto
beinsulated.
Athinfilmofmicaistypicallyused.

DarlingtonPair
Integrateddualtransistorsthatprovideavery
largebeta(>500).
Smallcurrentonbasethe1st stagecontrolsa
largecurrentbiasingthe2nd stage.

Q1
NPN
Q2
NPN

FieldEffectTransistors
PerformsjobsimilartoaBJT.
JunctionsareGate,Drain,Source.
GateSourceVoltage(VGS)controlstheload
current(IDS).
JFET(JunctionFET)isoneversion,doesnot
havelargecurrentcontrol.
NChanneluseanegativegatevoltage,P
Channeluseapositive.

 MOSFETscapacitivecouplethegate
preventinganydirectpathforcurrentflow.
Cancontrolhighcurrents.
Gainiscalledtransconductance andmeasured
insiemens ormhos.Itistheinverseof
resistance.
Gain=Changeincurrent
Changeinvoltage

Thyristors

Thyristors
Objectives:
Describethebasicstructureandoperationofa4
layerdiode
Identifythe4layerdiodesymbol
Discussanapplication

Half controlleddeviceThyristor
Thyristor Openedthepowerelectronicsera
1956,invention,BellLaboratories
1957,developmentofthe1stproduct,GE
1958,1stcommercializedproduct,GE
Thyristor replacedvacuumdevicesinalmostevery
powerprocessingarea.
Stillinuseinhighpowersituation.Thyristor stillhasthe
highestpowerhandlingcapability.

The Basic Four Layer Device

The 4-layer diode is constructed of four alternating layers of p and n
materials forming two pn junctions. This basic thyristor is also
known as a silicon unilateral switch (SUS), Shockley diode, or a 4layer diode.

The Basic Four Layer Device

The currents in a 4-layer diode are shown in the
equivalent circuit in Figure.

The Basic Four Layer Device

4-layer diode characteristics curve

The Basic Four Layer Device

Definition of terms:
Forward-Breakover Voltage (VBR(F))
- the maximum forward voltage that can be applied to the device prior to switching
Forward-Blocking region
- the region in which the device has a very high forward resistance (ideally an open)
and is in the off state
Forward-Conduction region
- the region in which the device is in the on state
Holding Current (IH)
- the minimum current which must pass through the device in order for it to remain in
the on' state
Switching current (IS)
- the value of the anode current at the point where the device switches from the
forward-blocking region to forward-conduction region.

The Basic Four Layer Device

Example: A certain 4-layer diode is biased in the forward-blocking region with an anode-tocathode voltage of 20V. Under this bias condition, the anode current is 1 uA. Determine the
resistance of the diode in the forward-blocking region.
Example: Determine the value of anode current when the device is on. VBR(F) = 100V. Assume
VBE = 0.7V and VCE(sat) = 0.1 for the internal transistor structure.

The Basic Four Layer Device

An Application:

SiliconControlledRectifier(SCR)

Objectives:
Afterthelecturestudentsshouldbeableto:
DescribethebasicstructureandoperationofanSCR
Identifytheschematicsymbolanddrawanequivalent
circuit
ExplaintheSCRcharacteristiccurvesanddefinevariousSCR
parameters
ExplaintheoperationofanSCRpowercontrolcircuitfor
controllingaresistiveload.
Definefiringdelayangleandconductionangle,andshow
howtheyaffecttheaverageloadcurrent.
ConstructanSCRcircuitforusewitha115Vacsupplyand
measurethegatecurrentandgatevoltagenecessarytofire
theSCR.

Silicon-Controlled Rectifier (SCR)

The silicon-controlled rectifier (SCR) is a four layer device with three
terminals, anode, cathode, and gate, used to control rather large
currents to a load.

Appearance and symbol of SCR

Silicon-Controlled Rectifier (SCR)

The silicon-controlled rectifier (SCR) equivalent circuit is
shown in Figure.

Silicon-Controlled Rectifier (SCR)

Two Transistor Model of SCR

Silicon-Controlled Rectifier (SCR)

Silicon-Controlled Rectifier (SCR)

Quantitative description of thyristor operation

IC1 IB2

IB1 IC2

AsIE1 increasesIC1 alsoincreasessince

IC1 IE1
sinceIC1 =IB2,IB2 alsoincreaseshenceIC2
increasessince

IC2 IB2

sinceIC2 =IB1,IB1 alsoincreases

Quantitative description of thyristor operation

IK IG IA
IA IC1 IC2
IC1 1IA IC2 2IK
IA 1IA 2IK
IK

IA(11)

IA(11)

IG IA

2
IA(11) 2IG 2IA
2IG
IA
1(1 2)

Example
ThetwotransistoranalogyofanSCRhasthe
followingdata:
GainofPNPtransistor=0.4
GainofNPNtransistor=0.5
Gatecurrent=50mA
Calculatetheanodecurrentofthedevice

Silicon-Controlled Rectifier (SCR)

Turning the SCR ON:
1. The anode must be more positive than the cathode
2. a positive pulse of current is applied to the gate
Turning the SCR OFF:
1. anode current interruption
2. forced commutation

Other methods to trigger SCR on

Thermal triggering the temperature of the forward biases
junction is increased until the reverse-biased junction
breakdown.
Radiation Triggering achieved with the help of charged
carriers which are produced by bombardment of the SCR
with external high energy particles like neutrons or protons.
Voltage triggering - the voltage applied across the anode and
cathode of SCR in increased which decreases the width of the
depletion region
dv/dt triggering dv/dt is made more than the value of the
critical rate of rise of the voltage

Silicon-Controlled Rectifier (SCR)

SCR Characteristics and Ratings:
Forward-Breakover Voltage (VBR(F))
- the voltage at which the SCR enters the forward-conduction region.
Holding Current (IH)
- the value of anode current below which the SCR switches from the forwardconduction region to the forward-blocking region
Gate trigger current(IGT)
- the value of the gate current necessary to switch the SCR from the forwardblocking region to the forward-conduction region under specified conditions..
Average forward current (IF(avg))
- the maximum continous anode current (dc) that the device can withstand in the
conduction state under specified conditions.
Reverse-breakdown voltage (VBR(R))
- the parameters that specifies the value of reverse voltage from cathode to anode at
which the device breaks into the avalanche region and begins to conduct heavily.

SCR Waveforms

Conduction Angle is the region where the SCR is

operating.
Firing Delay Angle is the number of degrees of an ac cycle
that elapses before the SCR is turned ON.

SCR Waveforms

Figure 3: 60 Deg Firing Angle

Figure 4: 135 Deg Firing Angle

Silicon-Controlled Rectifier (SCR)

Example:
Which condition would cause the larger load current, a firing delay angle of 30o or a
firing delay angle of 45o?
Solution:
The firing delay angle of 30o, because the SCR would then spend a greater portion of
the cycle time in the ON state.
Example:
If the conduction angle of an SCR is 90o and it is desired to double the average load
current, what new conduction angle is necessary? The supply is an ac sine wave.
Solution:
180o. Doubling the conduction angle doubles the average load current, because the first
90o of a sine wave is the image of the second 90o. However, in general, it is not true that
doubling the conduction angle will double the average current.

SCR Gate Characteristics

An SCR is fired in a short burst of current into the gate. This
gate current (iG) flows through the junction between the gate
and cathode and exists from the SCR on the cathode lead.
The amount of gate current needed to fire a particular SCR is
symbolized by IGT.
Holding Current symbolized by IHO. For most medium-sized
SCRs, IHO is around 10mA.

SCR Gate Characteristics

Figure 5: Gate to Cathode

Voltage (VGK) and the current
(IG) needed to fire an SCR

Figure 6: SCR with a 150

resistor in the gate lead and its
cathode terminal connected to
circuit ground

Example

For the circuit of Figure 6, what voltage is required at point X

to fire the SCR? The gate current needed to fire a 2N3669
is 20mA under normal condition.

Answer:Atleast3.7V

Silicon-Controlled Rectifier (SCR)

An Application:
ON-OFF Control of Current

Silicon-Controlled Rectifier (SCR)

Example:
Determine the gate current and the anode current when the switch, SW1, is
momentarily closed. Assume VAK = 0.8 V, VGK = 0.7V and IH = 20 mA.

Typical Gate Control Circuits

The simplest type of gate control circuit,

sometimes called a triggering circuit is
shown in Figure 7.
The purpose of R1 is to maintain some
fixed resistance in the gate lead even
when R2 is set to zero. This is necessary
to protect the gate from over currents.
R1 is also determines the minimum
firing delay angle.
One disadvantage of this simple
triggering circuit is that the firing angle
is adjustable only from about 0to 90
Figure 7: Very simple triggering
circuit for an SCR

TypicalGateControlCircuits

Silicon-Controlled Rectifier (SCR)

Typical Gate Control Circuits

Example:
For the circuit, assume the supply is 115Vrms, IGT = 15 mA, and r1 = 3
kohms. The firing delay is desired to be 90o. To what value should R2 be adjusted?

Silicon-Controlled Rectifier (SCR)

Capacitors Used to Delay Firing
- the firing delay angle can be adjusted past 90o

RC circuits should fall in the

range 1 30 ms.

Silicon-Controlled Rectifier (SCR)

Typical Gate Control Circuits

Example:
Suppose that it has been decided to use C1 = 0.068 uF and C2 = 0.033 uF in the gate
control circuit of figure.
a. Approximate the sizes of R1, R2 and R3 to give a wide range of firing adjustment.
b. If you then built the circuit and discovered that you could not adjust the firing delay
angle to less than 40o, what resistor would you experimentally change to allow adjustment below
40o?

Silicon-Controlled Rectifier (SCR)

Disadvantages of the previous gate control circuits:
a. temperature dependence
b. inconsistence firing behavior between SCRs of
the same type.
The solution is to replace the diode in the gate with a 4-layer
diode. The advantages of the 4-layer diode are that it is
relatively independent of temperature and that the break over
voltage can be held consistent from one unit to another.

Silicon-Controlled Rectifier (SCR)

An Application:
Half-Wave Power Control

Silicon-Controlled Rectifier (SCR)

An Application:
Lighting System for Power Interruptions

Unidirectional Full-Wave Control

Ensures that the firing

angle is identical for
both half cycles.
Design is similar to
full-wave control.

Bidirectional Full-Wave Control

(a) Full-wave unrectified power

control
- SCR1 can fire during the
positive half-cycle and SCR2
during the negative half cycle.
The current through the load
is not unidirectional

Bridge Circuits Containing an SCR

With the load inserted in one of

the ac lines leading to the
bridge, the load voltage is
unrectified.
With the load inserted in series
with the SCR itself, the load
voltage is rectified

SCR in DC Circuits

Automatic turn off does not

occur in DC circuit.
Often, main terminal current is
stopped by connecting a
temporary short circuit from the
anode to the cathode. This can
be done using a transistor
switch.