SM6002NFP

N-Channel Enhancement Mode MOSFET

Features

Pin Description
SD

60V/80A,

RDS(ON)=9.8m (max.) @ VGS=10V

Reliable and Rugged

Lead Free and Green Devices Available

Top View of TO-220-FP

(RoHS Compliant)

Applications
G

Synchronous Rectification.
Power Management in Inverter Systems.
S

N-Channel MOSFET

Ordering and Marking Information

Package Code
FP : TO-220-FP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device

SM6002N
Assembly Material
Handling Code
Temperature Range
Package Code
SM6002N FP :

XXXXX - Date Code

SM6002N
XXXXX

Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - Apr., 2010

www.sinopowersemi.com

Free Datasheet http://www.datasheet4u.com/

SM6002NFP
Absolute Maximum Ratings
Symbol

Parameter

Rating

Unit

Common Ratings (TA=25C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

60

VGSS

Gate-Source Voltage

25

Maximum Junction Temperature

175

TJ
TSTG

Storage Temperature Range

IS

V
C

-55 to 175

Diode Continuous Forward Current

TC =25C

80

TC=25C

300

TC=25C

80*

TC=100C

58

TC=25C

100

TC=100C

50

Mounted on Large Heat Sink

IDP

300s Pulse Drain Current Tested

ID

Continuous Drain Current

PD

Maximum Power Dissipation

RJC

Thermal Resistance-Junction to Case

RJA

Thermal Resistance-Junction to Ambient

62.5

EAS

Avalanche Energy, Single Pulsed (L=0.1mH)

100

A
W

1.5

C/W
mJ

Note* Current limited by bond wire.

Electrical Characteristics
Symbol

(TA = 25C Unless Otherwise Noted)

Parameter

Test Conditions

SM6002NFP
Min.

Typ.

Max.

60

30

Unit

Static Characteristics
BVDSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

VGS(th)
I GSS
RDS(ON)

VGS=0V, IDS=250A
VDS=48V, V GS=0V
TJ =85C

V
A

Gate Threshold Voltage

VDS=VGS, I DS=250A

Gate Leakage Current

VGS=25V, VDS=0V

100

nA

Drain-Source On-state Resistance

VGS=10V, IDS=40A

9.8

ISD =20A, V GS=0V

0.8

1.3

50

ns

90

nC

Diode Characteristics
VSD a

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

ISD =40A, dlSD /dt=100A/s

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SM6002NFP
Electrical Characteristics (Cont.)
Symbol

Parameter

(TA = 25C Unless Otherwise Noted)

Test Conditions

SM6002NFP
Min.

Typ.

Max.

1.3

3000

4200

430

250

17

30

15

27

62

110

32

58

76

106

14

25

Unit

Dynamic Characteristics b
RG

Gate Resistance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

tr

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

tf

VGS=0V,
VDS=30V,
Frequency=1.0MHz

VDD=30V, RL=30,
IDS=1A, V GEN=10V,
RG=6

Turn-off Fall Time

Gate Charge Characteristics

Qg

VGS=0V,VDS=0V,F=1MHz

pF

ns

Total Gate Charge

Qgs

Gate-Source Charge

Q gd

Gate-Drain Charge

VDS=30V, V GS=10V,
IDS=40A

nC

Note a : Pulse test ; pulse width300 s, duty cycle2%.

Note b : Guaranteed by design, not subject to production testing.

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

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SM6002NFP
Typical Operating Characteristics
Power Dissipation

Drain Current
90

120

80

100

ID - Drain Current (A)

Ptot - Power (W)

70

80

60

40

60
50
40
30
20

20
10
o

TC=25 C
0

20 40 60 80 100 120 140 160 180 200

TC=25 C,VG=10V
0

20 40 60 80 100 120 140 160 180 200

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

500

Lim
it

1ms

Rd
s(o
n)

ID - Drain Current (A)

100

Normalized Transient Thermal Resistance

10ms
100ms

10

1s

DC

TC=25 C

0.1
0.01

0.1

10

100 300

VDS - Drain - Source Voltage (V)

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

Duty = 0.5
0.2
0.1
0.05

0.1
0.02
0.01

0.01
Single Pulse

1E-3
1E-4

Mounted on minimum pad

o
RJA :62.5 C/W

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

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SM6002NFP
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance

Output Characteristics
200

10

180

ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

VGS= 7,8,9,10V

160
140
120
100
80

6V

60
40
20
0

8
VGS=10V
7

5V
0

20

40

60

80

100

120

ID - Drain Current (A)

VDS - Drain - Source Voltage (V)

Gate-Source On Resistance

Gate Threshold Voltage

1.8

30

IDS =250A

IDS=40A
25

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

1.6

20

15

10

1.4
1.2
1.0
0.8
0.6
0.4
0.2

0.0
-50 -25

10

VGS - Gate - Source Voltage (V)

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

25 50 75 100 125 150 175

Tj - Junction Temperature (C)

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SM6002NFP
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance

Source-Drain Diode Forward

200

2.2
VGS = 10V

100

IDS = 40A

1.8
o

IS - Source Current (A)

Normalized On Resistance

2.0

1.6
1.4
1.2
1.0
0.8
0.6

Tj=150 C
10
o

Tj=25 C

0.4
o

0.2
-50 -25

RON@Tj=25 C: 7m
0

25

50

0.1
0.0

75 100 125 150 175

1.2

1.5

Capacitance

Gate Charge
10

4500

VDS=30V

VGS - Gate-source Voltage (V)

4000

C - Capacitance (pF)

0.9

VSD - Source - Drain Voltage (V)

Frequency=1MHz

3500
Ciss

3000
2500
2000
1500
1000

Coss

500
5

8
7
6
5
4
3
2

10

15

20

25

30

35

40

VDS - Drain - Source Voltage (V)

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

IDS=40A

Crss
0

0.6

Tj - Junction Temperature (C)

5000

0.3

10

20

30

40

50

60

70

80

QG - Gate Charge (nC)

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SM6002NFP
Avalanche Test Circuit and Waveforms

VDS

tp

VDSX(SUS)

DUT

VDS
IAS

RG

VDD

VDD
IL

tp

EAS

0.01

tAV

Avalanche Test Circuit and Waveforms

VDS
RD

VDS

90%

DUT
RG

VGS
VDD
10%

VGS

tp

td(on) tr

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

td(off) tf

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SM6002NFP
Package Information
TO-220-FP
A

A1

L1

d1

A2

b2
S
Y
M
B
O
L
A
A1

T O -220FP
INCHES

M ILLIMETERS
M IN.

MAX.

M IN.

MAX.

4.20

4.80

0.165

0.189

2.60

3.20

0.102

0.126

A2

2.10

2.90

0.083

0.114

0.50

1.00

0.020

0.039

b2

0.90

1.90

0.035

0.075

0.30

0.80

0.012

0.031

0.319

0.358
0.650

8.10

9.10

d1

14.50

16.50

0.571

d2

12.10

12.90

0.476

0.508

9.70

10.70

0.382

0.421

14.50

0.512

0.570

2.54 BSC

0.100 BSC

13.00

L1

1.60

4.00

0.063

0.157

3.00

3.60

0.118

0.142

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

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SM6002NFP
Devices Per Unit
Package Type

Unit

Quantity

TO-220-FP

Tube

50

Classification Profile

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

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SM6002NFP
Classification Reflow Profiles
Profile Feature

Sn-Pb Eutectic Assembly

Pb-Free Assembly

100 C
150 C
60-120 seconds

150 C
200 C
60-120 seconds

3 C/second max.

3C/second max.

183 C
60-150 seconds

217 C
60-150 seconds

See Classification Temp in table 1

See Classification Temp in table 2

Time (tP)** within 5C of the specified

classification temperature (Tc)

20** seconds

30** seconds

Average ramp-down rate (Tp to Tsmax)

6 C/second max.

6 C/second max.

6 minutes max.

8 minutes max.

Preheat & Soak

Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*

package

body

Temperature

Time 25C to peak temperature

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process Classification Temperatures (Tc)

3
Package
Volume mm
Thickness
<350
<2.5 mm
235 C
2.5 mm

Volume mm
350
220 C

220 C

220 C

Table 2. Pb-free Process Classification Temperatures (Tc)

Package
Thickness
<1.6 mm
1.6 mm 2.5 mm
2.5 mm

Volume mm
<350
260 C
260 C
250 C

Volume mm
350-2000
260 C
250 C
245 C

Volume mm
>2000
260 C
245 C
245 C

Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TCT

Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104

Description
5 Sec, 245C
1000 Hrs, Bias @ 125C
168 Hrs, 100%RH, 2atm, 121C
500 Cycles, -65C~150C

Customer Service
Sinopower Semiconductor, Inc.
7F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818

Fax: 886-3-5642050

Copyright Sinopower Semiconductor, Inc.

Rev. A.1 - Apr., 2010

10

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