Heterostructure

Tutorial

Julie Huadan Zhao

Aug. 8, 1997

Table of Contents

1. Introduction .................................................................................. 1

2. Part I: Energy Bands in Abrupt Heterojunctions .............................. 2

3. Part II: Energy Bands in Graded Heterojunctions ............................... 13

4. Part III: I-V Characteristics of Heterojunctions................................... 18

5. Reference ............................................................................................ 20

1. Introduction
This tutorial is companion notes for Notes on Heterostructure Fundamentals
written by Professor Mark S. Lundstrom [1]. The purpose of this tutorial is to help
students learn to work with problems related to heterostructures by stepping through a
series of excises.
This tutorial contains a set of exercises related to heterojunctions. The first part of
tutorial will work on examples of drawing energy band diagram for abrupt
heterojunctions.

The first five examples are related to different doping profile

Al0.3Ga0.7As/GaAs Heterojunction. The last example in part I is to draw energy band

diagram for In0.8Ga0.2As/GaP n-P heterojunction. The second part of the tutorial will
work on examples of drawing energy band diagram for graded heterojunctions and
computing the grading distance.

The first example of Part II will deal with

Al0.3Ga0.7As/GaAs Heterojunction with different grading distance to see which grading

distance to good enough get rid of the spike in energy band diagram for abrupt
heterojunctions. The second example of Part II will calculate the grading distance needed
to get rid of the spike in the energy band diagram for abrupt heterojunctions. The third
part of the tutorial will work on I-V characteristics of heterojunctions.
In the tutorial, we will use a simulation program called Adept to plot energy band
diagram for heterojunctions. In addition, Adept will plot the I-V characteristics for us in
Part III of the tutorial. Adept is a simulation program on the Web. Go to Simulation Hub
on Web. The WWW address for it is: http://www.ecn.purdue.edu/labs/punch Click on
the list of Hubs. Then select Semiconductor Simulation Hub. Use guess acess to get in
and select tools. Then, you will see a list of tools in Semiconductor Simulation Hub.
Select Adept and go to first step of Run Adept -- Modify/Create Adept Input files. Go to
example folder. You will find all input files for this tutorial under tutorial directory.

2. Part I: Energy Bands in Abrupt Heterojunctions

Example 1: Draw energy band diagram for Al0.3Ga0.7As/GaAs N-p Heterojunction under
equilibrium condition.
Material parameters for Al0.3Ga0.7As:
= 3.827

NC = 0.857e18 cm-3

NV = 0.111e20 cm-3

= 11.9

mng = 0.08034

mp = 0.57941

= 4.070

NC = 0.462e18 cm-3

NV = 0.942e19 cm-3

= 12.847

mng = 0.06700

mp = 0.5200

EG = 1.797eV

ni = 0.255e04 cm-3

ND = 1.0e16 cm-3

NA = 0.00

Material parameters for GaAs:

EG = 1.422eV

ni = 0.238e07 cm-3

ND = 0.00

NA = 1.0e16 cm-3

Note: The material parameters are also avaliable in the Semiconductor Simulation Hub Semiconductor
Database on line.

Step1: Draw energy band diagram for isolated N type Al0.3Ga0.7As and p type GaAs
separatly.
Useful parameters:
NC

n0 ) = 0.0259 * log(

NV

p0 ) = 0.0259 * log(

N = k * T * log(
p = k * T * log(

EC

GN

0.875e18

1.0e16) = 0.115eV

0.942e19

1.0e16) = 0.177eV

EC

FN
Fp
EV

EV

Gp

Step 2: Draw the trivial part of the energy band diagram after we put two material
together.
We know that Fermi Level is a constant independent of position.

So, we can

draw a straight line for Fermi level. Then, it is reasonable to expect that regions for far
away from the heterojunction to be identical in character to the isolated semiconductor.

EC
EF

EV
Step 3: Draw the missing near-junction portion of the energy band diagram.
Go back to step 1 and take a look at the isolated energy band diagram. Since p
tyep GaAs has a lower Fermi Level, electrons will flow to p side of junction when we put
two material together. So, N side valence and conduction band will bend up and p side
valence and conduction band will bend down. In addition, another important thing to
keep in mind -- after putting two materials together, 'EC and 'EV will keep the same.

Step 4: Check energy band diagram by using Adept in Semiconductor Simulation Hub.
Go to Adept program on the Web. The simulation input file for this example will
be found uner tutorial directory in the example folder with file name example1. Follow
First Timer Users Guide in Adept to do the simulation. Also, check the energy band
digram drawn by Adept by calculating the following parameters.
qVbi = ( p N ) + EGp p N = ( 4.07 3.827) + 1.422 0.115 0.177 = 1.373eV
Vbi = 1.373V
VJp = Vbi *[
Vjp
VJN

N ND
11.9 * 1.0e16
] = 1.373 *[
] = 0.660V
N ND + p NA
11.9 * 1.0e16 + 12.847 * 1.0e16

N ND
p NA

VJN = Vjp *

p NA
N ND

= 0.660 *

12.847 * 1.0e16
= 0.713V
11.9 * 1.0e16

xp = [

2 p 0 VJp
qN A

2 * 12.847 * 8.85e 14 * 0.660 2

] =[
] = 3.02e 05cm
1.6e 19 * 1.0e16
1
2

NA xp = ND xN
xN =

NA xp
ND

1.0e16 * 3.02e 05
= 3.02e 05cm
1.0e16

Here is the complete energy band diagram generated by Adept:

Example 2: Draw energy band diagram for Al0.3Ga0.7As/GaAs N-p+ Heterojunction

under equilibrium condition. What difference would you expect to see from example 1?
Al0.3Ga0.7As: ND = 1.0e16 cm-3
GaAs: NA = 5.0e19 cm-3

Step 1: Follow the first three steps in example 1 to draw the energy band diagram for this
heterojunction.
NC

n0 ) = 0.0259 * log(

NV

p0 ) = 0.0259 * log(

N = k * T * log(
p = k * T * log(

0.875e18

1.0e16) = 0.115eV

0.942e19

5.0e19) = 0.043eV

Step 2: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Modify the input file for example 1 and see if you can get the right energy band
diagram. You can check your input file by going to example folder and looking into
example2 under tutorial directory. Check the energy band diagram by calculating the
same parameters as in example 1.
Here is the energy band diagram generated by Adept:

Example 3: Draw energy band diagram for Al0.3Ga0.7As/GaAs P-n Heterojunction under
equilibrium condition. What difference would you expect to see from example 1?
Al0.3Ga0.7As: NA = 1.0e16 cm-3
GaAs: ND = 1.0e16 cm-3

Step 1: Follow the first three steps in example 1 to draw the energy band diagram for this
heterojunction.
NV

p0 ) = 0.0259 * log(

NC

n0 ) = 0.0259 * log(

P = k * T * log(
n = k * T * log(

0.111e20

0.462e18

1.0e16) = 0.182eV

1.0e16) = 0.097eV

Step 2: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Modify the input file for example 1 and see if you can get the right energy band
diagram. You can check your input file by going to example folder and looking into
example3 under tutorial directory. Check the energy band diagram by calculating the
same parameters as in example 1.

Here is the energy band diagram generated by Adept:

Example 4: Draw energy band diagram for Al0.3Ga0.7As/GaAs N-n Heterojunction under
equilibrium condition.
Al0.3Ga0.7As: ND = 1.0e16 cm-3
GaAs: ND = 1.0e16 cm-3

Step 1: Follow the first three steps in example 1 to draw the energy band diagram for this
heterojunction.
NC

n 0 ) = 0.0259 * log(

NC

n0 ) = 0.0259 * log(

N = k * T * log(
n = k * T * log(

0.875e18

0.462e18

1.0e16) = 0.115eV

1.0e16) = 0.097eV

Step 2: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Modify the input file for example 1 and see if you can get the right energy band
diagram. You can check your input file by going to example folder and looking into

example4 under tutorial directory. Check the energy band diagram by calculating the
same parameters as in example 1.
qVbi = [( N + N ) ( n + n ) = n N + n N
= 4.07 3.827 + 0.097 0.115 = 0.225eV
Vbi = 0.225V

Here is the energy band diagram energated by Adept:

10

Important Note: Other equations we used in example 1 to calculate other parameters

will not work here because those equations are for pn junctions. Do simulation in Adept
to see the energy band diagram. We can see that VJN is approximately equal to Vbi. Not
like what we expected that two side will have the same depletion width, most depletion
region are on the N side.

11

Example 5: Draw energy band diagram for Al0.3Ga0.7As/GaAs P-p Heterojunction under
equilibrium condition.
Al0.3Ga0.7As: NA = 1.0e16 cm-3
GaAs: NA = 1.0e16cm-3

Step 1: Follow the first three steps in example 1 to draw the energy band diagram for this
heterojunction.

P = k * T * log(

NV

p0 ) = 0.0259 * log(

p = k * T * log(

NV

p0 ) = 0.0259 * log(

0.111e20

1.0e16) = 0.182eV

0.924e19

1.0e16) = 0.177eV

Step 2: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Modify the input file for example 1 and see if you can get the right energy band
diagram. You can check your input file by going to example folder and looking into
example4 under tutorial directory. Check the energy band diagram by calculating the
same parameters as in example 1. Do you notice any differece from our expectation?
Yes, as pointed in example 4, the equations are used to calculate parameters cant be used
in these example either.
qVbi = [( P + EGP + P ) ( p + EGp + p ) = ( p P ) + ( EGp EGP ) p + P
= 4.07 3.827 + 1.422 1.797 0.177 + 0.182 = 0.127eV
Vbi = 0.127V

12

Here is the energy band diagram generated by Adept:

13

Example 6: Draw energy band diagram for In0.8Ga0.2As/GaP n-P Heterojunction under
equilibrium condition.
Material parameters for In0.8Ga0.2As:
= 4.00

NC = 0.137e18 cm-3

NV = 0.659e19 cm-3

= 15.15

mng = 0.031

mp = 0. 41

= 2.04

NC = 0.186e20 cm-3

NV = 0.123e20cm-3

= 11.1

mng = 0.8200

mp = 0.6200

EG =0.550eV

ni = 0.229e14 cm-3

ND = 0.3e19 cm-3

NA = 0.00

Material parameters for GaP:

EG = 2.26eV

ni = 0.16e01cm-3

ND = 0.00

NA = 0.1e20 cm-3

Note: The material parameters are also avaliable in the Semiconductor Simulation Hub Semiconductor
Database on line.

Step 1: Follow the first three steps in example 1 to draw the energy band diagram for this
heterojunction.

n = k * T * log(

NC

n0 ) = 0.0259 * log(

NV

p0 ) = 0.0259 * log(

P = k * T * log(

0.137e18

0.3e19) = 0.034eV

0.123e20

0.1e20) = 0.0023eV

Step 2: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Go to Semiconductor Simulation Hub and select Adept. You can find input file
for this example named example6 in example folder under tutorial directory. Check the
envergy band diagram by Adept by calculating the following parameters.
qVbi = ( P n ) + EGP P n = 2.4 4.0 + 2.26 0.0023 + 0.034 = 0.6917eV
Vbi = 0.6917V

14

VJP = Vbi *[
VjP
VJn

n ND
15.05 * 0.3e19
] = 0.6917 *[
] = 0.2009V
1515
. * 0.3e19 + 111
. * 0.1e20
n ND + P NA

n ND
P NA

VJn = VjP *

P NA
111
. * 0.1e20
= 0.2009 *
= 0.4906V
15.15 * 0.3e19
n ND

2 P 0 VJP 2
2 * 111
. * 8.85e 14 * 0.2009 2
] =[
] = 4.9668e 07cm
1.6e 19 * 0.1e20
qN A
1

xP = [

N A xP = ND xn
xn =

N A x P 0.1e20 * 4.9668e 07
=
= 1.6556e 06cm
0.3e19
ND

Here is the energy band diagram generated by Adept:

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3. Part II: Energy Bands in Graded Heterojunctions

Example 7: Draw energy band diagram for Al0.3Ga0.7As/GaAs N-p Heterojunction under
equilibrium condition with linearly graded over the following distances:
b) 0.2 Pm

a) 500 Angstroms

c) 0.5 Pm

Material parameters for Al0.3Ga0.7As:

= 3.827

NC = 0.857e18 cm-3

NV = 0.111e20 cm-3

= 11.9

mng = 0.08034

mp = 0.57941

= 4.070

NC = 0.462e18 cm-3

NV = 0.942e19 cm-3

= 12.847

mng = 0.06700

mp = 0.5200

EG = 1.797eV

ni = 0.255e04 cm-3

ND = 1.0e16 cm-3

NA = 0.00

Material parameters for GaAs:

EG = 1.422eV

ni = 0.238e07 cm-3

ND = 0.00

NA = 1.0e16 cm-3

Note: The material parameters are also avaliable in the Semiconductor Simulation Hub Semiconductor
Database on line.

Step 1: Sketch the electrostatic potential profile for the junction.

Usefuly parameters for drawing the profiles:
NC

n0 ) = 0.0259 * log(

NV

p0 ) = 0.0259 * log(

N = k * T * log(
p = k * T * log(

0.875e18

1.0e16) = 0.115eV

0.942e19

1.0e16) = 0.177eV

qVbi = ( p N ) + EGp p N = ( 4.07 3.827) + 1.422 0.115 0.177 = 1.373eV

Vbi = 1.373V
VJp = Vbi *[
Vjp
VJN

N ND
11.9 * 1.0e16
] = 1.373 *[
] = 0.660V
N ND + p NA
11.9 * 1.0e16 + 12.847 * 1.0e16

N ND
p NA

VJN = Vjp *

p NA
N ND

= 0.660 *

12.847 * 1.0e16
= 0.713V
11.9 * 1.0e16

16

xp = [

2 p 0 VJp
qN A

2 * 12.847 * 8.85e 14 * 0.660 2

] =[
] = 3.02e 05cm
1.6e 19 * 1.0e16
1
2

NA xp = ND xN
xN =

NA xp
ND

1.0e16 * 3.02e 05
= 3.02e 05cm
1.0e16

Then, use the following equation to draw the electrostatic potential profile.
V (x) =

qVA
1.6e 19 * 1.0e16
( x + x p )2 =
( x + 3.02e 05) 2
2 p 0
2 * 12.847 * 8.85e 14

= 7.0363e08 * ( x + 3.02e 05) for x p < x < 0

V ( x ) = Vbi

qVD
1.6e 19 * 1.0e16
( x N x ) 2 = 1.373
(3.02e 05 x ) 2
2 N 0
2 * 11.9 * 8.85e 14

= 1.373 7.563e08 * (3.02e 05 x ) 2 for 0 < x < x N

V(x)
-xN

xp
x

Note: The compositional grading does not change the electrostatics, which are
determined by the depletion approximation.
Step 2: Sketch the electron affinity profile for the junction.
First, lets sketch an assumed electron affinity profile without grading. Then,
smooth the jump through the grading distance. So, we have the electron affinity profile
with grading.
F

(x)

-xN

xp

(x)

-xN

xp

17

Step 3: Sketch the energy band diagram for the junction.

By turning the electrostatic potential and electron affinity profiles upside down
and adding these two, we get the conduction band profile. We then find the valence band
profile by substracting the position dependent bandgap for Ec(x).

Step 4: Check the energy band diagram by using Adept in Semiconductor Simulation
Hub.
Go to Semiconductor Simulation Hub and select Adept. You can find input file
for this example named example7a, example7b and example7c in example folder under
tutorial directory. Check the energy band diagram by Adept to see if the spike is goine.
Here is the energy band diagram generated by Adept:
a)

18

b)

c)

19

Example 8: Compute the grading distance xg for example 7. Use Adept to draw energy
band diagram and see if the spike is gone.
x g = x n (1 1

EC

0.23
)
3
.
02
05
*
(
1
1
) = 2.76e 05cm
=
e

qVbi
1.373

Go to Semiconductor Simulation Hub and select Adept. You can find the input
file for this example under tutorial directory with name example8 in example folder. Do
the simulation and check the energy band diagram. Compare the energy band diagram in
example 1, is the spike gone?

Here is the energy band diagram generated by Adept:

20

4. Par III: I-V Characteristics of Heterojunctions

Example 9: Draw I-V characteristics of Al0.3Ga0.7As/GaAs N-p Heterojunction.

a) Draw I-V characteristic of N-p abrupt heterojunction with applying forward bias
voltage from 0 to 1.4 volts.
b) Draw I-V characteristic of N-p graded heterojunction with applying forward bias
voltage from 0 to 1.4 volts. Use the grading distance calculated in example 8. Then,
compare these two plots.

Step 1: Go to Adept and open the example folder. You can find the input file named
example9a under tutorial directory in example folder. Run the simulation and examine
the I-V plot.
Here is the I-V plot generated by Adept:

21

Step 2: Go to Adept and open the example folder. You can find the input file named
example9a under tutorial directory in example folder. Run the simulation and examine
the I-V plot.
Here is the I-V plot generated by Adept:

Step 3: Compare the above two plots. What difference do you see from these two plots?
Yes, graded heterojunction has a much higher current than the abrupt
heterojunctions. Because graded heterojunctions have a alomst constant Fermi Lever
under bias. However, abrupt heterojunctions do not have this characteristic as that of
graded ones. For abrupt heterojunctions, how the Fermi Level line up is best shown in
Fig 6.4 (p. 244) in Semiconductor Device Fundamentals[2]. So, in practice, we often use
graded heterojunction to increase the current.

22

References:
[1] Lundstrom, Mark S., Notes on Heterostructure Fundamentals, fall 1995.
[2] Pierret, Robert F., Semicondctor Device Fundamentals, 1996.

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