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Ass 1 Questions

This document contains an assignment on electronic circuits with questions about biasing techniques for BJTs and MOSFETs. It asks about defining DC load lines and stability factor expressions, drawing self bias circuits, conditions for thermal stability, and the need for compensation. It also asks to explain voltage divider bias, compensation using diodes and thermistors, and to calculate resistor values for a given BJT circuit. Finally, it asks to explain the biasing of enhancement type MOSFETs.
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0% found this document useful (0 votes)
9 views

Ass 1 Questions

This document contains an assignment on electronic circuits with questions about biasing techniques for BJTs and MOSFETs. It asks about defining DC load lines and stability factor expressions, drawing self bias circuits, conditions for thermal stability, and the need for compensation. It also asks to explain voltage divider bias, compensation using diodes and thermistors, and to calculate resistor values for a given BJT circuit. Finally, it asks to explain the biasing of enhancement type MOSFETs.
Copyright
© © All Rights Reserved
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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Electronic Circuits-I

Assignment I
Part-A
1 .What is biasing?
2. Define DC load line.
. 3. Draw the circuit of self bias using BJT.
4. Write the conditions of thermal stability.
5. .Write the general expression for stability factor.
6. What is the need for compensation technique?
7. What is the advantage of using emitter resistance in the context of biasing?
8. What are the disadvantages of base bias with collector feedback?
Part-B

1. Explain about voltage divider bias of BJT and derive the expression for stability factor
2.Explain about the compensation technique to stabilize Q point using diode and thermistor
3. A transistor with = 50, Vbe = 0.7V, Vcc = 22.5V & Rc = 5.6K is used in a biasing circuit. It is designed
to establish the quiescent point at Vce = 12V, Ic = 1.5mA, S = 3. Find the values of RE, R1 & R2.
4. Explain the biasing technique of enhancement type MOSFET

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