Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

Chapter 4
4.1
(a) (i) g m = 2

k n W
I DQ
2 L

0.1 W
W
0.5 = 2
(0.5) = 2.5
2 L
L
k W
(ii) I DQ = n (VGSQ VTN )2
2 L
0.1
2
0. 5 =
(2.5)(VGSQ 0.4 ) VGSQ = 2.4 V
2

0.1 W
W
(b) (i) 0.5 = 2
(0.15)
L
2

= 8.33

0.1
2
(ii) 0.15 =
(8.33)(VGSQ 0.4 ) VGSQ = 1.0 V
2

______________________________________________________________________________________

4.2
k p
(a) (i) g m = 2
2

W
I DQ
L

W
0.04 W
1. 2 = 2
(0.15) = 120
2
L
L

k p W
2
(ii) I DQ = V SGQ + VTP
2 L
0.04
2
0.15 =
(120 )(V SGQ 0.6 ) V SGQ = 0.85 V
2

W
0.04 W
(b) (i) 1.2 = 2
(0.50 ) = 36
L
2 L
0.04
2
(ii) 0.50 =
(36 )(V SGQ 0.6 ) V SGQ = 1.43 V
2
______________________________________________________________________________________

4.3
I D = K n (VGS VTN ) (1 + VDS )
2

I D1 1 + VDS1
3.4 1 + (10 )
=

=
I D 2 1 + VDS 2
3.0 1 + ( 5 )

3.4 [1 + 5 ] = 3.0 [1 + 10 ]

3.4 3.0 = ( 3 10 ( 3.4 ) 5 ) = 0.0308

VDS
5
=
= 12.5 k
I D
0.4
______________________________________________________________________________________
ro =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.4
1
r0 =
ID

1
1
=
I D = 0.833 mA
r0 ( 0.012 )(100 )
______________________________________________________________________________________
ID =

4.5
2
(a) I D = K n (VGS VTN ) (1 + V DS )
I D = I DO (1 + V DS )

Then

0.258 (1 + 3.3 )
=
0.250 (1 + 1.5 )

Or 1.032(1 + 1.5 ) = 1 + 3.3 = 0.01826 V 1

0.250 = I DO [1 + (0.01826 )(1.5)] I DO = 0.2433 mA
ro =

= 225 k

(0.01826)(0.2433)
= (0.2433)[1 + (0.01826 )(5)] = 0.2655 mA
I DO

(b) I D
______________________________________________________________________________________
4.6

(a)
ro =

(i)
ro =

(ii)
(b)

ID

( 0.02 )( 0.05 )

= 1000 K

1
= 100 K
0.02
( )( 0.5 )

I D =

(i)

VDS
1
=
= 0.001 mA = 1.0 A
ro
1000

I D 1.0
=
2%
ID
50

I D =

VDS
1
=
= 0.01 10 A
100
ro

I D
10
=
2%
500
(ii) I D
______________________________________________________________________________________
4.7

I D = 1.0 mA
1
1
ro =
=
= 100 K
I D ( 0.01)(1)
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.8
(a) V DD = I DQ R D + V DSQ
3.3 = I DQ (5) + 1.5 I DQ = 0.36 mA

k W
2
I DQ = n VGSQ VTN
2 L
0. 1
2
0.36 =
(40 ) VGSQ 0.4 VGSQ = 0.824 V
2

k W 0.1
2
(b) K n = n =
(40 ) = 2 mA/V
2
2
L

g m = 2 K n I DQ = 2 (2)(0.36) = 1.697 mA/V

ro =

1
1
=
= 111.1 k
I DQ (0.025)(0.36 )

A = g m (ro R D ) = (1.697)(111.1 5) = 8.12

______________________________________________________________________________________
4.9
(a) A = g m R D
3.8 = g m (10 ) g m = 0.38 mA/V

k
g m = 2 K n I DQ = 2 n
2

W
I DQ
L

W
0.1 W
0.38 = 2
(0.12 ) = 6.02
2
L
L

(b) 5 = g m (10 ) g m = 0.50 mA/V

W
0.1 W
0.50 = 2
(0.12 ) = 10.4
2
L
L

______________________________________________________________________________________

4.10
(a) V DD = I DQ R D + V DSQ

5 = (0.5)R D + 3 R D = 4 k
k W
2
I DQ = n VGSQ VTN
2 L
W
0.08 W
2
0.5 =
(1.2 0.6 )
2
L
L

= 34.7

k W
0.08
(b) g m = 2 n I DQ = 2
(34.7 )(0.5) = 1.666 mA/V
2
2 L
1
1
ro =
=
= 133.3 k
I DQ (0.015)(0.5)

(c) A = g m (ro R D ) = (1.666)(133.3 4) = 6.47

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.11
2

K n vgs2 = K n Vgs sin t = K nVgs2 sin 2 t

1
[1 cos 2 t ]
2
K nVgs2
So K n vgs2 =
[1 cos 2 t ]
2
sin 2 t =

K nVgs2
Ratio of signal at 2 to that at :

cos 2 t

2 K n (VGSQ VTN ) Vgs sin t

The coefficient of this expression is then:

Vgs

4 (VGSQ VTN )

______________________________________________________________________________________
4.12
0.01 =

Vgs

4 (VGSQ VTN )

So Vgs = ( 0.01)( 4 )( 3 1) Vgs = 0.08 V

______________________________________________________________________________________
4.13
R2
60
V DD =
(a) VGS =
(3.3) = 0.66 V
R
+
R
60 + 240
2
1
k W
0. 1
2
2
I DQ = n (VGS VTN ) =
(80 )(0.66 0.4 ) = 0.270 mA
2
L
2

V DSQ = V DD I DQ R D = 3.3 (0.270 )(8) = 1.14 V

k W
0.1
(b) g m = 2 n I DQ = 2
(80)(0.270) = 2.078 mA/V
2
2 L
1
1
=
= 185 k
ro =
I DQ (0.02 )(0.27 )
R1 R 2

(c) A = g m (ro R D )
R R +R
Si
1 2
We find ro R D = 185 8 = 7.668 k

R1 R2 = 60 240 = 48 k
48
So A = (2.078)(7.668)
= 15.3
48 + 2
______________________________________________________________________________________

4.14

Av = g m ( r0 || RD )
10 = g m (100 || 5 ) g m = 2.1 mA/V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.15
R2
175
V DD =
(a) VG =
(5) = 2.1875 V
R
+
R
175 + 225
2
1

2.1875 = VGS + I D R S = VGS + K n R S (VGS VTN )

2
2.1875 = VGS + (1)(1) VGS
1.6VGS + 0.64

or V

2
GS

0.6VGS 1.5475 = 0 VGS = 1.58 V

I DQ = K n (VGS VTN ) = (1)(1.58 0.8) = 0.608 mA

2

V DSQ = V DD I DQ (R S + R D ) = 5 (0.608 )(1 + 4 ) = 1.96 V

(b) A =

g m RD
1 + g m RS

g m = 2 (1)(0.608 ) = 1.56 mA/V

(1.56)(4)
= 2.44
1 + (1.56)(1)
g m (R D R L ) (1.56)(R D R L )
=
= 0.6094(R D R L )
(c) A =
1 + g m RS
1 + (1.56)(1)

A =

(0.75)(2.44) = (0.6094)(R D R L ) R D R L = 3.0 k

4 R L = 3 R L = 12 k
______________________________________________________________________________________
4.16
(a) V DSQ = V DD I DQ (R S + R D )

5 = 12 (2 )(R S + R D ) R S + R D = 3.5 k
R S = 0.5 k , then R D = 3 k

I DQ = K n VGSQ VTN

2 = 1.5 VGSQ 1.2

VGSQ = 2.355 V

V G = V GSQ + I DQ R S = 2.355 + (2 )(0.5) = 3.355 V

R2
1
V DD =
VG =
Rin V DD
R1
R1 + R 2
1
3.355 =
(250)(12) R1 = 894 k
R1

R1 R2 = 894 R2 = 250 R2 = 347 k

(b) g m = 2 (1.5)(2 ) = 3.464 mA/V

A =

g m (R D R L )

(3.464)(3 10)

= 2.93
1 + g m RS
1 + (3.464)(0.5)
______________________________________________________________________________________
4.17
(a) From Problem 4.16;
R S = 0.5 k , R D = 3 k ,
R1 = 894 k , R 2 = 347 k

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(b) g m = 2 (1.5)(2 ) = 3.464 mA/V

A = g m (R D R L ) = (3.464)(3 10) = 7.99

______________________________________________________________________________________
4.18
(a)
Av = g m RD
15 = 2 RD RD = 7.5 K

(b)
Av =
5 =

g m RD
1 + g m RS

( 2 )( 7.5 )

RS = 1 K
1 + ( 2 ) RS
______________________________________________________________________________________

4.19
Av =

g m RD
1 + g m RS

8 =

g m RD
1 + g m (1)

(a)
(1)

16 = g m RD

(2)

8=

16

1 + g m (1)

g m = 1 mA/V
RD = 16 K

Then
Av = 10 =

(1)(16 )

1 + (1) RS

RS = 0.6 K
(b)
______________________________________________________________________________________

4.20
k W
2
(a) I DQ = I Q = n (VGSQ VTN )
2 L
0.1
2
0. 5 =
(50 )(VGSQ 0.8) VGSQ = 1.247 V
2

V DSQ = V + I DQ R D VGSQ = 5 (0.5)(6 ) + 1.247 = 3.25 V

k W
0.1
(b) g m = 2 n I DQ = 2
(50)(0.5) = 2.236 mA/V
L
2
2

1
1
=
= 100 k
ro =
I DQ (0.02 )(0.5)

A = g m (ro R D ) = (2.236)(100 6) = 12.7

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

(
)
) = (2.236 )(100 6 6) = 6.51

(c) A = g m ro R D R L = (2.236 ) 100 6 20 = 9.86

(d) A = g m (ro R D R L

______________________________________________________________________________________
4.21
(a) V DSQ = 5 ( 5) I DQ (R S + R D )

5.5 = 10 (0.1)(R S + R D ) R S + R D = 45 k

I DQ = K n VGSQ VTN

(0.1) = (0.85)(VGSQ 0.8)2 VGSQ

= 1.143 V

VGS + I D R S = 5

1.143 + (0.1)R S = 5 R S = 38.6 k

R D = 6.43 k

(b) g m = 2 K n I DQ = 2 (0.85)(0.1) = 0.583 mA/V

ro =

1
1
=
= 500 k
I DQ (0.02 )(0.1)

(c) A = g m R D ro R L = (0.583) 6.43 500 40 = 3.19

______________________________________________________________________________________
4.22
(a) V DSQ = V DD I DQ (R S + R D )

2 = 3.3 (0.5)(R S + R D ) R S + R D = 2.6 k

)
( 0.8))

I DQ = K n VGSQ VTN

0.5 = 2 VGSQ

2
2

VGSQ = 0.3 V

V GSQ + I DQ R S = 0

0.3 + (0.5)R S = 0 R S = 0.6 k

RD = 2 k

(b) g m = 2 K n I DQ = 2 (2)(0.5) = 2 mA/V

A =

g m (R D R L )

(2)(2 10)

= 1.52
1 + g m RS
1 + (2)(0.6 )
______________________________________________________________________________________
4.23
(a) V DD = I DQ R D + V DSQ + I DQ R S and VGS + I DQ R S = 0

Then V DD = K n R D (VGS VTN ) + V DSQ VGS

2

5 = (2)(2)(VGS + 0.8) + 2.5 VGS

Which yields
2
4VGS
+ 5.4VGS + 0.06 = 0 , VGS = 0.0112 V
2

and I DQ = 2( 0.0112 + 0.8) = 1.244 mA

2

5 = (1.244 )(2 ) + 2.5 + (1.244 )R S R S = 8.99 9

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(b) g m = 2 K n I DQ = 2 (2)(1.244) = 3.155 mA/V
A =

g m (R D R L )

(3.155)(2 2)

= 3.07
1 + g m RS
1 + (3.155)(0.009)
______________________________________________________________________________________
4.24
a.
5 = I DQ RS + VSDQ + I DQ RD 5
5 = I DQ RS + 6 + I DQ (10 ) 5

I DQ =

1.
2.
3.

4
RS + 10

VS = VSDQ + I DQ RD 5 = VSGQ

1 + I DQ (10 ) = VSGQ
I DQ = K p (VSGQ 2 )

Choose RS = 10 k I DQ =

4
= 0.20 mA
20

VSGQ = 1 + (0.2)(10) = 3 V
0.20 = K P (3 2) 2 K P = 0.20 mA / V 2

b.
I DQ = ( 0.20 )( 3 2 ) = 0.20 mA
2

( 0.2 )( 0.2 ) = 0.4 mA / V

Av = g m ( RD || RL ) = ( 0.4 )(10 || 10 ) Av = 2.0

g m = 2 K P I DQ = 2

c.
4
= 0.133 mA
30
= 1 + (0.133)(10) = 2.33 V

Choose RS = 20 k I DQ =
VSGQ

0.133 = K p (2.33 2) 2 K p = 1.22 mA / V 2

g m = 2 (1.22)(0.133) = 0.806 mA/V
Av = (0.806)(10 10) Av = 4.03
A larger gain can be achieved.
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.25
(a)

I DQ = K p (VSGQ + VTP )

0.25 = 0.8 (VSGQ 0.5 )

VSGQ = 1.059 V
3 1.059
RS =
RS = 7.76 K
0.25
VD = VS VSDQ = 1.059 1.5 = 0.441 V
RD =

(b)

0.441 ( 3)
0.25

RD = 10.2 K

Av = g m ( RD RL )

( 0.8 )( 0.25 ) = 0.8944 mA/V

Av = ( 0.8944 )(10.2 || 2 )

g m = 2 K p I DQ = 2
Av = 1.50

(c)

VO = I ( RD || RL ) = 0.25 (10.2 || 2 ) = 0.418

So VO = 0.836 peak-to-peak

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.26

I DQ = K n (VGSQ VTN )

g m = 2 K n I DQ
2.2 = 2 K n ( 6 ) K n = 0.202 mA / V 2
6 = 0.202 ( 2.8 VTN ) VTN = 2.65 V
2

VDSQ = 18 I DQ ( RS + RD )
18 10
= 1.33 k RS = 1.33 RD
6
g m ( RD RL )

RS + RD =
Av =

1 + g m RS

R 1
2.2 D
RD + 1
1 =
1 + ( 2.2 )(1.33 RD )
1 + 2.93 2.2 RD =

2.2 RD
1 + RD

( 3.93 2.2 RD )(1 + RD ) = 2.2 RD

3.93 + 1.73RD 2.2 RD2 = 2.2 RD
2.2 RD2 + 0.47 RD 3.93 = 0
0.47 +

RD =

VG = VGS + VS

( 0.47 ) + 4 ( 2.2 )( 3.93)

RD = 1.23 k,
2 ( 2.2 )
= 2.8 + ( 6 )( 0.1) = 3.4 V
2

RS = 0.10 k

1
1
Rin VDD = (100 )(18 ) = 3.4 R1 = 529 k
R1
R1

VG =

529 R2
= 100 R2 = 123 k
529 + R2
______________________________________________________________________________________

4.27
(a) V S = V SGQ = V SDQ + I DQ R D 9

V SGQ = 5 + I DQ (4) 9 = K p (4) V SGQ + VTP

V SGQ = 8 V

Or 8V

2
SGQ

2
SGQ

2.4V SGQ + 1.44 4

20.2V SGQ + 7.52 = 0 V SGQ = 2.071 V

I DQ = I Q = K p V SGQ + VTP

= 2(2.071 1.2 ) = 1.518 mA

2

(b) g m = 2 K p I DQ = 2 (2)(1.518) = 3.485 mA/V

ro =

1
1
=
= 22 k
I DQ (0.03)(1.518)

A = g m (R D ro ) = (3.485)(4 22) = 11.8

(c) A = g m R D ro R L = (3.485 ) 4 22 8 = 8.29

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.28
(a)

I DQ = K p (VSGQ + VTP )

0.5 = 0.25 (VSGQ + 0.8 )

VSGQ = 0.614 V = VS
10 0.614
RS =
RS = 18.8 K
0.5
VD = VS VSDQ = 0.614 3 = 2.386 V
RD =

2.386 ( 10 )
0.5

RD = 15.2 K

(b)
Av = g m RD

( 0.25)( 0.5 ) = 0.7071 mA/V

Av = ( 0.7071)(15.2 )

g m = 2 K p I DQ = 2
Av = 10.7

______________________________________________________________________________________
4.29

Av = g m ( RD RL )
VDSQ = VDD I DQ ( RS + RD )

10 = 20 (1)( RS + RD ) RS + RD = 10 k

Let

RD = 8 k, RS = 2 k
A = 10 = g m (8 20)
g m = 1.75 mA/V = 2 K n I DQ = 2 K n (1) K n = 0.766 mA/V 2

VS = I DQ RS = (1)( 2 ) = 2 V
I DQ = K n (VGS VTN ) 1 = 0.766 (VGS 2 ) VGS = 3.14 V
VG = VGS + VS = 3.14 + 2 = 5.14
2

VG =

1
1
Rin VDD ( 200 )( 20 ) = 5.14 R1 = 778 k
R1
R1

778R2
= 200 R2 = 269 k
778 + R2
______________________________________________________________________________________
4.30

(a) A =
Ro =

g m ro
(5)(100) = 0.998
=
1 + g m ro 1 + (5)(100 )
1
1
ro = 100 = 0.2 100 R o 200
gm
5

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
g m (ro R S )

(b) A =

1 + g m (ro R S )

We have ro R S = 100 5 = 4.762 k

(5)(4.762) = 0.960
1 + (5)(4.762)
______________________________________________________________________________________
A =

4.31

Av =
0.98 =

g m ( RL ro )

1 + g m ( RL ro )
g m ro
g m ro = 49
1 + g m ro

Also 0.49 =

0.49 =
0.49 =

g m ( RL ro )

1 + g m ( RL ro )
g m ( RL ro )

Rr
gm L o
RL + ro
=
Rr
1 + gm L o
RL + ro

RL + ro + g m ( RL ro )

( 49 )(1)
49
=
1 + ro + ( 49 )(1) 50 + ro

ro = 50 K
g m = 0.98 mA/V
______________________________________________________________________________________
4.32
(a)

Av =

( 2 )( 25)
g m ro
=
1 + g m ro 1 + ( 2 )( 25 )

Av = 0.98
Ro =

1
1
ro = 25 = 0.5 || 25
gm
2

Ro = 0.49 K
(b)
Av =

g m ( ro || RL )

1 + g m ( ro || RL )

2 ( 25 || 2 )

1 + 2 ( 25 || 2 )

2 (1.852 )

1 + 2 (1.852 )

Av = 0.787

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.33

0 ( 1.5)
= 0.15 mA
10
k W
= n VGSQ VTN
2 L

(a) I DQ =
I DQ

0.1
0.15 =
(80 ) VGSQ 0.4
2

VGSQ = 0.594 V

k W
0.1
(b) g m = 2 n I DQ = 2
(80)(0.15) = 1.549 mA/V
2
2 L
1
1
ro =
=
= 333 k
I DQ (0.02)(0.15)
We find ro R S = 333 10 = 9.708 k
Then A =
(c) R o =

g m (ro R S )

1 + g m (ro R S )

(1.549)(9.708) = 0.938
1 + (1.549 )(9.708)

1
1
ro R S =
333 10 = 0.6456 9.708
gm
1.549

or R o = 605
______________________________________________________________________________________
4.34

(a) I DQ =
(b) A =

V DD V DSQ
RS

2.5 1.25
= 2.5 mA
0 .5

g m RS
1 + g m RS

0.85 =

g m (0.5)
g m = 11.33 mA/V
1 + g m (0.5)

k
g m = 2 n
2

I DQ

0.1 W
W
11.33 = 2
(2.5) = 257
2 L
L
k W
(c) I DQ = n (VGSQ VTN )2
2 L
0. 1
2
2. 5 =
(257 )(VGSQ 0.6 ) VGSQ = 1.041 V
2
V IQ = V GSQ + V O = 1.041 + 1.25 = 2.291 V
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.35
(a) P = I Q V DD 2.5 = I Q (2.5) I Q = 1 mA

(b) R o =

1
ro
gm
1
1
=
= 50 k
I DQ (0.02 )(1)

ro =

So 0.5 =

1
50 g m = 1.98 mA/V
gm

k
g m = 2 n
2

W
I DQ
L

0.1 W
W
1.98 = 2
(1) = 19.6
2 L
L
g m ro
(1.98)(50) = 0.990
(c) A =
=
1 + g m ro 1 + (1.98)(50 )
0.1
(d) g m = 2
(100 )(1) = 4.472 mA/V
2

1
1
ro =
50 = 0.2236 50 R o = 223
gm
4.472
______________________________________________________________________________________
Ro =

4.36
R2
350
V DD =
(a) VG =
(10 ) = 2.917 V
350 + 850
R1 + R 2
10 = I DQ R S + V SGQ + V G
k p W 0.04
2
Now K p = =
(80 ) = 1.6 mA/V
2
2
L

2
So 10 = (1.6 )(4) V SGQ 1.2 + V SGQ + 2.917

We find 6.4V

2
SGQ

14.36V SGQ + 2.133 = 0 V SGQ = 2.084 V

I DQ = 1.6(2.084 1.2 ) = 1.25 mA

2

V SDQ = 10 (1.25 )(4 ) = 5 V

(b) g m = 2 K p I DQ = 2 (1.6)(1.25) = 2.828 mA/V

1

ro =

I DQ

(0.05)(1.25)

= 16 k

ro R S R L = 16 4 4 = 1.778 k

A =

g m ro R S R L

1 + g m ro R S R L

(c) Ag =

io

(2.828)(1.778) = 0.834
1 + (2.828)(1.778)

io o
1 o 1

= (0.834 ) = 0.2085 mA/V

o i RL i 4

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(d) R o =

1
1
R S ro =
4 16 = 0.3536 3.2
gm
2.828

R o = 318
______________________________________________________________________________________

4.37

(a) (i) K n =

k n W 0.1
2
=
(20 ) = 1 mA/V
2 L 2

g m = 2 K n I DQ = 2 (1)(5) = 4.472 mA/V

ro =

I DQ

(0.02)(5)

= 10 k

ro R L = 10 4 = 2.857 k
A =

(ii) R o =

g m (ro R L )

(4.472)(2.857 ) = 0.927
1 + g m (ro R L ) 1 + (4.472)(2.857 )
=

1
1
ro =
10
gm
4.472

R o = 219

(b) (i) g m = 2 (1)(2 ) = 2.828 mA/V

ro =

(0.02)(2)

= 25 k

ro R L = 25 4 = 3.448 k
A =
(ii) R o =

(2.828)(3.448) = 0.907
1 + (2.828)(3.448)
1
1
ro =
25
gm
2.828

R o = 349
______________________________________________________________________________________

4.38
a.
Av =

gm ( 4)
g m RL
0.95 =
1 + g m RL
1 + gm ( 4)

0.95 = 4 (1 0.95 ) g m g m = 4.75 mA/V

1
W
g m = 2 n Cox I Q
2
L
4.75 = 2

( 0.030 )

W
W
= 47.0
( 4)
L
L

1
W
g m = 2 n Cox
2
L

IQ

4.75 = 2 ( 0.030 )( 60 ) I Q I Q = 3.13 mA

b.
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.39
I DQ = K n (VGS VTN )

5 = 5 (VGS + 2 ) VGS = 1 V VS = VGS = 1 V

2

I DQ =

VS ( 5 )
RS

RS =

g m = 2 K n I DQ = 2
r0 =
Av =
=

1+ 5
RS = 1.2 k
5

( 5)( 5) = 10 mA / V

1
1
=
= 20 k
I DQ ( 0.01)( 5 )
g m ( r0 RS RL )

1 + g m ( r0 RS RL )

(10 ) ( 20 1.2 2 )
Av = 0.878
1 + (10 ) ( 20 1.2 2 )

1
1
|| r0 || RS = || 20 ||1.2 Ro = 91.9
gm
10
______________________________________________________________________________________
R0 =

4.40
(a) V S = I DQ R S 5 = (5)(1) 5 = 0 VGS = 0
k W
2
I DQ = n VGSQ VTN
2
L

0
.
1 W
W
2
5=
[0 ( 2 )] = 25
2 L
L

0. 1
(b) g m = 2
(25)(5) = 5 mA/V
2
1
1
=
= 20 k
I DQ (0.01)(5)

ro =

ro R S = 20 1 = 0.9524 k
g m (ro R S )

A =

1 + g m (ro R S )

(5)(0.9524) = 0.826
1 + (5)(0.9524 )

1
1
ro R S = 20 1 Ro = 165
gm
5

(c) Ro =

(d) ro R S R L = 20 1 2 = 0.6452 k
A =

g m ro R S R L

1 + g m ro R S R L

(5)(0.6452 ) = 0.763
1 + (5)(0.6452 )

______________________________________________________________________________________
4.41
R0 =

1
RS
gm

Output resistance determined primarily by gm

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
1
Set
= 0.2 k g m = 5 mA/V
gm
g m = 2 K n I DQ 5 = 2
I DQ = K n (VGS VTN )

( 4 ) I DQ

I DQ = 1.56 mA

1.56 = 4 (VGS + 2 )
VGS = 1.38 V, VS = VGS = 1.38 V
2

RS =

1.38 ( 5 )

RS = 4.09 k
1.56
5 ( 4.09 2 )
g m ( RS RL )
=
Av = 0.870
Av =
1 + g m ( RS RL ) 1 + 5 ( 4.09 2 )

______________________________________________________________________________________
4.42

(a) g m = 2 K p I DQ = 2 (5)(10) = 14.14 mA/V

ro =

= 10 k

(0.01)(10)
g m ro
(14.14)(10) = 0.993
=
=
1 + g m ro 1 + (14.14 )(10 )

(b) R o =
(c) A =

I DQ

1
1
ro =
10 = 0.07072 10 R o = 70.2
gm
14.14
g m (ro R L )

1 + g m (ro R L )

0.90 =

(14.14)(ro R L )
(ro
1 + (14.14 )(ro R L )

R L ) = 0.6365 k

10 R L = 0.6365 R L = 680
______________________________________________________________________________________
4.43

iD = I DQ =

1
v0
RS RL

v0 = I DQ RS RL =
v0 ( min ) =

Av =
vi =

I DQ RS RL
RS + RL

I DQ RS
R
1+ S
RL
g m ( RS RL )

1 + g m ( RS RL )

v0
vi

I DQ ( RS RL ) 1 + g m ( RS RL )
g m ( RS RL )
I DQ

1 + g m ( RS RL )
gm
______________________________________________________________________________________
vi ( min ) =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.44
(a)
VDD = VDSQ + I DQ RS

3 = 1.5 + ( 0.25 ) RS RS = 6 K

VS = 1.5 V
I DQ = K n (VGSQ VTN )
0.25 = 0.5 (VGSQ 0.4 )

VGSQ = 1.107 V

VG = VGSQ + VS + 1.107 + 1.5 = 2.607 V

R2
1
VG =
VDD = RL VDD
R1
R1 + R2
1
2.607 = ( 300 )( 3) R1 = 345.2 K R2 = 2291 K
R1
(b)
Av =

g m RS
1 + g m RS

g m = 2 K n I DQ = 2

( 0.5)( 0.25) = 0.7071 mA/V

Av =

( 0.7071)( 6 )
Av = 0.809
1 + ( 0.7071)( 6 )

Ro =

1
1
6 = 1.414 || 6
RS =
gm
( 0.7071)

Ro = 1.14 K
______________________________________________________________________________________
4.45
Ri =

1
1
= 0.5 g m =
= 2 mA/V
gm
0.5

k
g m = 2 n
2

I DQ

0.1 W
W
2=2
(0.25) = 80
2 L
L
A = g m R D

20 = (2 )R D R D = 10 k
______________________________________________________________________________________

4.46
(a) R o = R D = 500
(b) VGSQ = 1.2 V

V DD V DS 2.2 (V DS (sat ) + 0.3) 2.2 (1.2 0.4 + 0.3)

=
=
RD
0.5
0.5
= 2.2 mA

I DQ =
I DQ

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

(c) I DQ = K n VGSQ VTN

2.2 = K n (1.2 0.4) K n = 3.438 mA/V 2

2

g m = 2 K n I DQ = 2 (3.438)(2.2) = 5.5 mA/V

Ri =

1
1
=
Ri = 182
g m 5.5

(d) A = g m R D = (5.5)(0.5) = 2.75

______________________________________________________________________________________
4.47
k W 0.1
2
K n = n =
(80 ) = 4 mA/V
2 L 2

g m = 2 K n I DQ = 2 (4)(0.5) = 2.828 mA/V

A = g m R D = (2.828)(4) = 11.3

Ri = 10

1
1
= 10
= 10 0.3536 Ri = 342
gm
2.828

______________________________________________________________________________________
4.48
a.
VGS + I DQ RS = 5
5 VGS
2
I DQ =
= K n (VGS VTN )
RS

5 VGS = (10 )( 3) (VGS2 2VGS + 1)

30VGS2 59VGS + 25 = 0

VGS =

59

( 59 )

4 ( 30 )( 25 )

2 ( 30 )

VGS = 1.35 V

I DQ = ( 3)(1.35 1) I DQ = 0.365 mA
2

VDSQ = 10 ( 0.365 )( 5 + 10 ) VDSQ = 4.53 V

b.
g m = 2 K n I DQ = 2
r0 =

I DQ

( 3)( 0.365 ) g m = 2.093 mA / V

r =

( 0 )( 0.365 ) 0
RL ) = ( 2.093) ( 5 4 ) Av = 4.65

A = g m ( RD
c. v
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.49
a.

I DQ = K p (VSG + VTP )

0.75 = ( 0.5 )(VSG 1) VSG = 2.225 V

5 2.225
5 = I DQ RS + VSG RS =
RS = 3.70 k
0.75
VSDQ = 10 I DQ ( RS + RD )
6 = 10 ( 0.75 )( 3.70 + RD ) RD = 1.63 k
2

b.
Ri =

1
gm

g m = 2 K p I DQ = 2

( 0.5 )( 0.75) = 1.225 mA / V

1
Ri = 0.816 k
1.225
Ro = RD Ro = 1.63 k
Ri =

c.

RS
ii

RS + [1/ g m ]
3.70
1.63

i0 =

ii
1.63 + 2 3.70 + 0.816
i0 = 0.368ii = i0 = 1.84sin t ( A )
RD
i0 =
RD + RL

v0 = i0 RL = (1.84 )( 2 ) sin t v0 = 3.68sin t ( mV )

______________________________________________________________________________________
4.50
(a) VO = (V DS (sat ) + 0.25) VGS
VO = VGS VTN + 0.25 VGS = 0.4 + 0.25 = 0.15 V
1.8 ( 0.15)
= 0.975 k
2
(b) A = g m R D
6 = g m (0.975) g m = 6.154 mA/V
RD =

k
g m = 2 n
2

I DQ

0.1 W
W
6.154 = 2
(2 ) = 94.7
2 L
L
k W
(c) I DQ = n (VGSQ VTN )2
2 L
0. 1
2
2=
(94.7 )(VGSQ 0.4 ) VGSQ = 1.05 V
2

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.51
2
(a) I DQ = I Q = K n VGSQ VTN

2 = 4 VGSQ 0.6

VGSQ = 1.307 V

V D = V DSQ V GSQ = 3.5 1.307 = 2.193 V

RD =

3.3 2.193
= 0.554 k
2

(b) g m = 2 K n I DQ = 2 (4)(2) = 5.657 mA/V

Ri =

1
1
=
Ri = 177
g m 5.657

(c) A = g m R D R L = (5.657) 0.554 4 = 2.75

______________________________________________________________________________________
4.52
(a) I DQ = K p V SGQ + VTP

1.2 = 2.5 V SGQ 0.8 V SGQ = 1.493 V

RS =

V + V SGQ
I DQ

3.3 1.493
= 1.51 k
1. 2

V SDQ = 6.6 I DQ (R S + R D ) 3 = 6.6 1.2(1.51 + R D ) R D = 1.49 k

(b) g m = 2 K p I DQ = 2 (2.5)(1.2) = 3.464 mA/V

A = g m (R D R L ) = (3.464)(1.49 4) = 3.76

______________________________________________________________________________________
4.53

(a)

KD
=
KL

A =

(W L )D
(W L )L

=5

W
So = 25
L D
From Example 4.11,
(3.3 0.6) + (0.6)(1 + 5) = 1.05 V
GSDt =
1+ 5
1.05 0.6
GSDQ =
+ 0.6 = 0.825 V
2
k W
0 .1
2
(b) I DQ = n (VGSDQ VTN )2 =
(25)(0.825 0.6 )
2
L
2

D
I DQ = 0.0633 mA

Now I DD = I DL

W
VGSDQ VTN
L D

W
= VGSLQ VTN
L L

25
VGSDQ VTN = V DD VO VTN
1
5(0.825 0.6 ) = 3.3 VO 0.6
Or V DSDQ = VO = 1.575 V

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.54
(a) Neglect in dc analysis.
Transition points:
For point B,
VOtB = V DD VTNL = 5 0.8 = 4.2 V

For point A,
I DD = I DL

(
(1.2)(V

K nD VGSDQ VTND
GSDQ

0 .6

= K nL VGSLQ VTNL

) = (0.2)[0 ( 0.8)]
2

0. 2
(0.8) + 0.6 = 0.9266 V
1. 2
= VGSDQ VTND = 0.9266 0.6 = 0.3266 V

So VGSDQ =
Then VOtA

For point A: VOtA = 0.3266 V, V GSDQ = 0.9266 V

For point B: VOtB = 4.2 V, V GSDQ = 0.9266 V
(b) V GSDQ = 0.9266 V,
4.2 0.3266
+ 0.3266 = 2.2633 V
2
2
2
= K nD VGSDQ VTND = (1.2 )(0.9266 0.6) = 0.128 mA

V DSDQ =

(c) I DQ

(d) A = g mD

(
(r

roD = roL =

oD

roL )

1
1
=
= 390.6 k
I DQ (0.02 )(0.128)

g mD = 2 K nD I DQ = 2 (1.2)(0.128) = 0.7838 mA/V

A = (0.7838)(390.6 390.6) = 153

______________________________________________________________________________________
4.55
(a) VTN = 0.6 V

I D = K n (V DS VTN )

0.5 = K n (1.5 0.6) K n = 0.6173 mA/V 2

1 dI D
=
= 2 K n (V DS VTN )
r dV DS
2

Then r =

2 K n (V DS VTN )

1
r = 900
2(0.6173)(1.5 0.6 )

(b) I D = (0.6173)(3 0.6) = 3.56 mA

2

1
r = 337
2(0.6173)(3 0.6)
______________________________________________________________________________________
r=

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.56
a.
I DQ = K nD (VGS VTND ) = ( 0.5 ) ( 0 ( 1) )
2

I DQ = 0.5 mA
I DQ = K nL (VGSL VTNL ) = K nL (VDD VO VTNL )
2

0.5 = 0.030 (10 V0 1)

0.5
= 9 V0 V0 = 4.92 V
0.030

b.

I DD = I DL
K nD (Vi VTND ) = K nL (VDD Vo VTNL )
2

K nD
(Vi VTND ) = VDD Vo VTNL
K nL
K nD
(Vi VTND )
K nL

Vo = VDD VTNL
Av =

dVo
K nD
=
=
dVi
K nL

(W / L )D
(W / L )L

500
Av = 4.08
30
______________________________________________________________________________________
Av =

4.57
(a)

I DQ = K L (VGSL VTNL ) = K L (VDSL VTNL )

2

I D = ( 0.1)( 4 1) = 0.9 mA
2

I DQ = K D (VGSD VTND )

0.9 = (1)(VGSD 1) VGSD = 1.95 V

VGG = VGSD + VDSL = 1.95 + 4 VGG = 5.95 V
2

b.

I DD = I DL
K D (VGSD VTND ) = K L (VGSL VTNL )
2

KD
(VGG + Vi Vo VTND ) = Vo VTNL
KL

KD
Vo 1 +
=

K L

Av =

KD
(VGG + Vi VTND ) + VTNL
KL

KD / KL
dVo
=

dVi 1 + K D / K L

Av =

1
1 + KL / KD

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(c) From Problem 4.55.
1
RLD =
2 K L (VDSL VTNL )
1

2 ( 0.1)( 4 1)

= 1.67 k

g m = 2 K D I DQ = 2 (1)( 0.9 ) = 1.90 mA / V

Av =

g m ( RLD || RL )

(1.90 )(1.67 || 4 )
Av = 0.691
1 + g m ( RLD || RL ) 1 + (1.90 )(1.67 || 4 )
=

______________________________________________________________________________________
4.58
a.

From Problem 4.57.

g m ( RLD || RL )
(1.90 )(1.67 || 10 )
=
Av =
1 + g m ( RLD || RL ) 1 + (1.90 )(1.67 || 10 )
Av = 0.731

b.

R0 =

1
1
1.67 = 0.526 ||1.67
RLD =
1.90
gm

R0 = 0.40 k
______________________________________________________________________________________
4.59
(a) A = g mD roD roL

roD =

1
1
=
= 100 k
D I DQ (0.02 )(0.5)

roL =

1
1
=
= 50 k
L I DQ (0.04 )(0.5)

roD roL = 100 50 = 33.33 k

Then 40 = g mD (33.33) g mD = 1.20 mA/V

k W
g mD = 2 n I DQ
2 L D

( )

0.1 W
W
1.20 = 2
(0.5) = 14.4
L D
2 L D

k p W
2
(b) I DQ = V SGQ + VTP
L
2

L
0.04
2
0.5 =
(50 )(V SGQ 0.4 ) V SGQ = 1.107 V
2

V SGQ = V + V B
1.107 = 2.5 V B V B = 1.393 V

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
k W
(c) I DQ = n (VGSDQ VTN )2
2 L D
0.1
2
0.5 =
(14.4)(VGSDQ 0.4) VGSDQ = 1.233 V
2

______________________________________________________________________________________

4.60

(a) (i) roD =

1
1
=
= 100 k
D I DQ (0.04)(0.25)

roL =

1
1
=
= 200 k
L I DQ (0.02 )(0.25)

roD roL = 100 200 = 66.67 k

A = g mD (roD roL )

25 = g mD (66.67 ) g mD = 0.375 mA/V

k p
g mD = 2
2

W
I DQ
L
D

0.04 W
W
0.375 = 2
(0.25) = 7.03
2
L

D
L D
k W
(ii) I DQ = n (V B VTN )2
2 L L
0.1
2
0.25 =
(10 )(V B 0.4 ) V B = 1.107 V
2

k p W
2
(iii) I DQ = V SGDQ + VTP
L
2

D

0.04
2
0.25 =
(7.03)(V SGDQ 0.6) V SGDQ = 1.933 V
2

(b) (i) roD =

1
1
=
= 250 k
D I DQ (0.04 )(0.1)

roL =

1
1
=
= 500 k
L I DQ (0.02 )(0.1)

roD roL = 250 500 = 166.7 k

A = g mD (roD roL )

25 = g mD (166.7 ) g mD = 0.15 mA/V

k p
g mD = 2
2

W
I DQ
L
D

0.04 W
W
0.15 = 2
(0.1) = 2.81
2 L D
L D

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
k W
(ii) I DQ = n (V B VTN )2
2 L L
0.1
2
0.1 =
(10 )(V B 0.4 ) V B = 0.874 V
2

k p W
2
(iii) I DQ = V SGDQ + VTP
L
2
D
0.04
2
0.1 =
(2.81)(V SGDQ 0.6 ) V SGDQ = 1.934 V
2

______________________________________________________________________________________

4.61
85
K n1 = ( 50 ) 2.125 mA/V 2
2

( 2.125)( 0.1) = 0.9220

g m1 = 2 K n1 I D1 = 2

ro1 =
ro 2 =

1
1
=
= 200 K
1 I D1 ( 0.05 )( 0.1)
1

= 133.3 K

( 0.075)( 0.1)
Av = g m1 ( ro1 || ro 2 ) = ( 0.922 )( 200 || 133.3)
2 I D 2

Av = 73.7

______________________________________________________________________________________
4.62
K p1 =

k p w 40
2
= ( 50 ) 1.0 mA/V
2 L 2

g m1 = 2 K p1 I D1 = 2 (1)( 0.1) = 0.6325 mA/V

ro1 =
ro 2 =

1 I D1

1
= 133.3 K
0.075
(
)( 0.1)

1
1
=
= 200 K
2 I D 2 ( 0.05 )( 0.1)

Av = g m1 ( ro1 ro 2 ) = ( 0.6325 )(133.3 || 200 )

Av = 50.6
______________________________________________________________________________________
4.63
(a) I DD = I DL

K nD (VGSD VTND ) = K nL (VGSL VTNL )

2

2
(V I VO 0.4) = VO 0.4
0.5
2V I 0.8 = 3VO 0.4
2
1
VO = V I (0.4 )
3
3

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
For V I = 0.8 V, VO = 0.4 V
For V I = 2.5 V, V O= 1.533 V
(b) I D = K nL (VGSL VTNL ) = (0.5)(VO 0.4)
2

2
2

1
I D = (0.5) V I (0.4 ) 0.4 = (0.5) V I 0.533
3
3

For V I = 0.8 V, I D = 0 ; For V I = 2.5 V, I D = 0.642 mA

(c) From (a), voltage gain = constant = 2/3 = 0.667
______________________________________________________________________________________
4.64
(a) V SD (sat ) = V SG + VTP = (2.5 1) 0.4 = 1.1 V

V SD = V + VO VO (max ) = V + V SD (sat ) = 2.5 1.1 = 1.4 V

k p W
0.04
2
2
(b) I D = (V SGL + VTP ) =
(5)(2.5 1 0.4 ) = 0.121 mA
2
L
2

k
p W
2
(c) I D = (V SGD + VTP )
L
2

D
0.04
2
0.121 =
(50 )(V SGD 0.4 ) V SGD = 0.748 V
2

k p
(d) g mD = 2
2

roD = roL
A =

1
=
=
ID

0.04

ID = 2
(50 )(0.121) = 0.6957 mA/V
D
2

1
= 330.6 k
(0.025)(0.121)

g mD (roD roL )

1 + g mD (roD

(0.6957 )(165.3) = 0.9914

roL ) 1 + (0.6957 )(165.3)
=

______________________________________________________________________________________
4.65
(a) I DQ = K n VGSDQ VTN

1 = 2 VGSDQ 0.6

I DQ = K p V SGLQ + VTP

VGSDQ = 1.307 V

1 = 0.5 V SGLQ 0.6

V SGLQ = 2.014 V

VO = 3.3 2.014 = 1.286 V

V DSDQ = VO V S = 1.286 ( 1.307 ) = 2.593 V

(b) I d = I l
g mDVi = g mLVo

A =

Vo g mD
=
=
Vi
g mL

Kn
Kp

2
=2
0. 5
______________________________________________________________________________________

(c) A =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.66
(a)
85
K n1 = ( 50 ) 2.125 mA/V 2
2
g m1 = 2 K n1 I D1 = 2
ro1 =
ro 2 =

1 I D1

( 2.125 )( 0.1) = 0.922 mA/V

1
= 200 K
0.05
( )( 0.1)

1
1
=
= 133.3 K
2 I D 2 ( 0.075 )( 0.1)

(b)
Ri1 =

1
1
=
= 1.085 K
g m1 0.922

Ri1

1.085

Vgs1 =
Vi =
Vi = 0.956Vi
+
+
R
0.050
1.085
0.050

i1

Vgs1
= + ( 0.956 )( 0.922 )( 200 )(133.3)
Av = g m1 ( ro1 ro 2 )
Vi
Av = 70.5
Ri = 0.05 +

(c)

1
1
= 0.05 +
Ri = 1.135 K
0.922
g m1

Ro ro1 ro 2 = 200 133.7 Ro 80 K

(d)
______________________________________________________________________________________
4.67
(a)
g m1 = 2 K n I D1 = 2

( 2 )( 0.1) = 0.8944 mA/V

gm2 = 2 K p I D 2 = 2

( 2 )( 0.1) = 0.8944 mA/V

1
1
=
= 100 K
I D ( 0.1)( 0.1)
(b) The small-signal equivalent circuit
ro1 = ro 2 =

g m1Vi +

(1)

Vsg 2
ro1

+ g m 2Vsg 2 +

Vsg 2 Vo
ro 2

=0

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(2)
Vo Vo Vsg 2
+
= g m 2Vsg 2
ro
ro 2
1 1
1

Vo +
+ gm2
= Vsg 2
r
r
r
o o2
o2

1
1
1

Vo +
+ 0.8944 Vsg 2 = Vo ( 0.03317 )
= Vsg 2
50
100
100

(1)
1
1 V
g m1Vi + Vsg 2 + g m 2 + = o
ro 2 ro 2
ro1
1 Vo
1
0.8944 Vi + Vo ( 0.03317 )
+ 0.8944 +
=
100 100
100
0.8944 Vi = Vo ( 0.01 0.03033)
Vo
= 44
Vi

(c) For output resistance, set Vi = 0.

g m 2Vsg 2 + I x =

(1)
Vsg 2

(2)
(2)

ro1

Vx Vx Vsg 2
+
ro
ro 2

+ g m 2Vsg 2 +

Vsg 2 Vx
ro 2

=0

1
1 V
Vsg 2 + g m 2 + = x
r
r
ro 2
o2
o1
1 Vx
1
Vsg 2
+ 0.8944 +
=
100 100
100
Vsg 2 = Vx ( 0.010936 )

(1)
1 1
1

I x = Vx + Vsg 2 + g m 2
ro ro 2
ro 2

1
1
1

I x = Vx +
+ 0.8944
Vx ( 0.010936 )
50 100
100

I x = Vx ( 0.03 0.0098905 )
V
Ro = x = 49.7 K
Ix
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.68
(a) I DQ1 = K n1 VGSQ1 VTN 1

0.2 = 0.2 VGSQ1 0.6

VGSQ1 = 1.6 V

I DQ 2 = K p 2 V SGQ 2 + VTP 2

0.5 = 1.0 V SGQ 2 0.6

V SGQ 2 = 1.307 V

0.6
= 3k
0.2
= 0.6 + 2 = 2.6 V

R S1 =

V D1

5 2 .6
= 12 k
0. 2
= V GSQ1 + 0.6 = 1.6 + 0.6 = 2.2 V

R D1 =
V G1

R2
VG1 = 2.2 =
R1 + R 2
Or R1 = 909 k and

1
1
(5) =
(400 )(5)
Rin (5) =
R1
R1

R1 R2 = Rin = 400 k R 2 = 714 k

V S 2 = V D1 + V SGQ 2 = 2.6 + 1.307 = 3.907 V

5 3.907
= 2.19 k
0 .5
= V S 2 3 = 3.907 3 = 0.907 V

RS 2 =

VD2

RD2 =

0.907
= 1.81 k
0.5

(b) g m1 = 2 K n1 I DQ1 = 2 (0.2)(0.2) = 0.4 mA/V

g m 2 = 2 K p 2 I DQ 2 = 2 (1)(0.5) = 1.414 mA/V

A = ( g m1 R D1 )( g m 2 R D 2 ) = g m1 g m 2 R D1 R D 2

A = (0.4 )(1.414 )(12 )(1.81) = 12.3

______________________________________________________________________________________

4.69
2
(a) I DQ1 = K n1 (VGS1 VTN 1 )
0.1 = 0.2(VGS1 0.6 ) VGSQ1 = 1.307 V
2

I DQ 2 = K p 2 V SGQ 2 + VTP

0.25 = 1.0 V SGQ 2 0.6

V SGQ 2 = 1.10 V

V G1 = V GSQ1 + I DQ1 R S 1 = 1.307 + (0.1)(1) = 1.407 V

R2
1
V DD =
Rin V DD
VG1 =
R1
R1 + R 2
1
1.407 =
(250 )(3.3) R1 = 586 k
R1

R1 R2 = Rin = 250 k R 2 = 436 k

V D1 = I DQ1 R S 1 + V DSQ1 = (0.1)(1) + 1.2 = 1.3 V

R D1 =

3. 3 1. 3
= 20 k
0.1

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
V S 2 = V D1 + V SGQ 2 = 1.3 + 1.1 = 2.4 V
3. 3 2. 4
= 3. 6 k
0.25
= V S 2 V SDQ 2 = 2.4 1.8 = 0.6 V

RS 2 =
VD2

RD2 =

0. 6
= 2. 4 k
0.25

(b) g m1 = 2 K n1 I DQ1 = 2 (0.2)(0.1) = 0.2828 mA/V

g m 2 = 2 K p 2 I DQ 2 = 2 (1)(0.25) = 1.0 mA/V

A = g m1 g m 2 R D1 R D 2 = (0.2828 )(1.0 )(20 )(2.4 ) = 13.6

______________________________________________________________________________________

4.70
0.04
2
K p1 =
(20 ) = 0.4 mA/V
2

0.1
2
K n2 =
(80 ) = 4.0 mA/V
2
0.6
(a) R S 1 =
= 6k
0.1
V D1 = 1.8 0.6 1 = 0.2 V
R D1 =

0.2 ( 1.8)
= 20 k
0.1

I DQ1 = K p1 V SGQ1 + VTP

0.1 = 0.4 V SGQ1 0.4

V SGQ1 = 0.90 V

I DQ 2 = K n 2 VGSQ 2 VTN

0.3 = 4 VGSQ 2 0.4

VGSQ 2 = 0.6739 V

V G1 = 1.8 0.6 V SGQ1 = 1.8 0.6 0.9 = 0.3 V

R2
(3.6 ) 1.8
VG1 =
R1 + R 2
1
0.3 =
(200)(3.6) 1.8 R1 = 343 k
R1

R1 R2 = 200 k R 2 = 480 k
V D1 = 1.8 0.6 1.0 = 0.2 V
V S 2 = V D1 V GSQ 2 = 0.2 0.6739 = 0.4739 V
RS 2 =

0.4739 ( 1.8)
= 4.42 k
0. 3

g m1 R D1 g m 2 R S 2

(b) A =

1 + g m1 R S1 1 + g m 2 R S 2

g m1 = 2 K p1 I DQ1 = 2 (0.4)(0.1) = 0.4 mA/V

g m 2 = 2 K n 2 I DQ 2 = 2 (4)(0.3) = 2.191 mA/V
A =

(0.4 )(20) (2.191)(4.42)

= 2.13
1 + (0.4 )(6) 1 + (2.191)(4.42)

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
1
1
(c) R o =
RS 2 =
4.42 = 0.4564 4.42 Ro = 414
g m2
2.191
______________________________________________________________________________________
4.71
(a)

I DQ1 =

10 VGS1
2
= K n1 (VGS1 VTN 1 )
RS 2

10 VGS 1 = ( 4 )(10 ) (VGS2 1 4VGS 1 + 4 )

40VGS2 1 159VGS 1 + 150 = 0

(159 ) 4 ( 40 )(150 )
VGS 1 = 2.435 V
2 ( 40 )
2
I DQ1 = ( 4 )( 2.435 2 ) I DQ1 = 0.757 mA
VDSQ1 = 20 ( 0.757 )(10 ) VDSQ1 = 12.4 V
VGS 1 =

159

Also I DQ 2 = 0.757 mA
VDSQ 2 = 20 ( 0.757 )(10 + 5 ) VDSQ 2 = 8.65 V
(b)
c.

g m1 = g m 2 = 2 KI DQ = 2

( 4 )( 0.757 ) gm1 = gm 2 = 3.48 mA / V

V0 = ( g m 2Vgs 2 ) ( RD RL )
Vgs 2 = ( g m1Vgs1 g m 2Vgs 2 ) ( RS1 RS 2 )
Vi = Vgs1 Vgs 2 Vgs1 = Vi + Vgs 2

Vgs 2 + g m 2Vgs 2 ( RS 1 RS 2 ) = g m1 (Vi + Vgs 2 ) ( RS 1 RS 2 )

Vgs 2 + g m 2Vgs 2 ( RS 1 RS 2 ) + g m1Vgs 2 ( RS 1 Rs 2 ) = g m1Vi ( RS1 RS 2 )

Vgs 2 =
Av =

g m1Vi ( RS 1 RS 2 )

1 + g m 2 ( RS 1 RS 2 ) + g m1 ( RS 1 RS 2 )

V0 g m1 g m 2 ( RS 1 RS 2 )( RD RL )
=
Vi
1 + ( g m1 + g m 2 ) ( RS1 RS 2 )

( 3.48 ) (10 10 )( 5 2 )
Av =
Av = 2.42
1 + ( 3.48 + 3.48 ) (10 10 )
2

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.72
a.
I DQ = 3 mA

VS 1 = I DQ RS 5 = ( 3)(1.2 ) 5 = 1.4 V
I DQ = K1 (VGS VTN )

3 = 2 (VGS 1) VGS = 2.225 V

2

VG1 = VGS + VS 1 = 2.225 1.4 = 0.825 V

R3
R3
VG1 =
( 5 ) 0.825 =
( 5 ) R3 = 82.5 k
500
R1 + R2 + R3
VD1 = VS1 + VDSQ1 = 1.4 + 2.5 = 1.1 V
VG 2 = VD1 + VGS = 1.1 + 2.225 = 3.325 V
R2 + R3
R2 + R3
VG 2 =
( 5 ) 3.325 =
( 5)
R
+
R
+
R
500
2
3
1
R2 + R3 = 332.5 R2 = 250 k

R1 = 500 250 82.5 R1 = 167.5 k

VD 2 = VD1 + VDSQ 2 = 1.1 + 2.5 = 3.6 V
5 3.6
RD =
RD = 0.467 k
3
b.
Av = g m1 RD
g m1 = 2 K n I DQ = 2

( 2 )( 3) = 4.90 mA / V

Av = ( 4.90 )( 0.467 ) Av = 2.29

______________________________________________________________________________________
4.73
a.

VS 1 = I DQ RS 10 = ( 5 )( 2 ) 10 VS 1 = 0
I DQ = K1 (VGS1 VTN )

5 = 4 (VGS 1 1.5 ) VGS1 = 2.618 V

VG1 = VGS 1 + VS1 = 2.618 V = IR3 = ( 0.1) R3 R3 = 26.2 k
2

VD1 = VS 1 + VDSQ1 = 0 + 3.5 = 3.5 V

VG 2 = VD1 + VGS = 3.5 + 2.62 = 6.12 V
= ( 0.1)( R2 + R3 )
R2 + R3 = 61.2 k R2 = 35 k

VD 2 = VD1 + VDSQ 2 = 3.5 + 3.5 = 7.0 V

10 7
RD =
RD = 0.6 k
5
10 6.12
R1 =
R1 = 38.8 k
0.1

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
b.
Av = g m1 RD

( 4 )( 5 ) = 8.944 mA / V

g m1 = 2 K n I DQ = 2

Av = ( 8.944 )( 0.6 ) Av = 5.37

______________________________________________________________________________________
4.74
a.

I DQ

V
= I DSS 1 GS
VP

V
4 = 6 1 GS
( 3 )

4
VGS = ( 3) 1
VGS = 0.551 V
6

VDSQ = VDD I DQ RD
6 = 10 ( 4 ) RD RD = 1 k

b.

2 I DSS VGS 2 ( 6 ) 0.551

1
1
=
g m = 3.265 mA/V
3
( VP ) VP 3
1
1
=
r0 = 25 k
r0 =
I DQ ( 0.01)( 4 )
gm =

c.

A = g m (ro R D ) = (3.265)(25 1) A = 3.14

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.75

VGS + I DQ ( RS1 + RS 2 ) = 0
V
I DQ = I DSS 1 GS
VP

VGS

V
+ I DSS ( RS1 + RS 2 ) 1 GS = 0
VP
2

V
VGS + ( 2 )( 0.1 + 0.25 ) 1 GS = 0
VP
2
V2
VGS + 0.7 1 VGS + GS 2 = 0

( 2 ) ( 2 )
0.175VGS2 + 1.7VGS + 0.7 = 0
VGS =

1.7

(1.7 ) 4 ( 0.175)( 0.7 )

VGS
2 ( 0.175 )
VGS 2 ( 2 ) 0.431
2

= 0.4314 V

2 I DSS
1
=
1
g m = 1.569 mA/V
VP
2
VP
2
g m ( RD RL ) (1.569 ) ( 8 4 )
=
Av = 3.62
Av =
1 + g m RS1
1 + (1.569 )( 0.1)

gm =

i0 ( v0 / RL ) v0 RG
50
=
=
= ( 3.62 ) Ai = 45.2
ii ( vi / RG ) vi RL
4
______________________________________________________________________________________
Ai =

4.76
I DSS
= 4 mA
2
V
VDSQ = DD = 10 V
2
VDSQ = VDD I DQ ( RS + RD )
10 = 20 ( 4 )( RS + RD ) RS + RD = 2.5 k
VS = 2 V = I DQ RS = 4 RS RS = 0.5 k, RD = 2.0 k
I DQ =

I DQ

V
= I DSS 1 GS
VP

V
4
4 = 8 1 GS VGS = ( 4.2 ) 1
VGS = 1.23 V

4.2
8
)

(
VG = VS + VGS = 2 1.23
R2
R2
VG = 0.77 V =
( 20 ) =
( 20 ) R2 = 3.85 k, R1 = 96.2 K
100
R1 + R2
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.77
a.
I DSS
= 5 mA
2
V
12
=6V
VDSQ = DD =
2
2
12 6
RS = 1.2 k
RS =
5
I DQ =

I DQ

V
= I DSS 1 GS
VP

V
5
5 = 10 1 GS VGS = ( 5 ) 1
VGS = 1.464 V
10

( 5 )
VG = VS + VGS = 6 1.464 = 4.536 V
R2
1
VG =
VDD = Rin VDD
R
R
R
+
1
2
1
1
4.536 = (100 )(12 ) R1 = 265 k
R1
265R2
= 100 R2 = 161 k
265 + R2

b.
gm =
r0 =

2 I DSS VGS
1
( VP ) VP

2 (10 ) 1.46
=
1
g m = 2.83 mA/V
5
5

1
1
=
= 20 k
I DQ ( 0.01)( 5 )

Av =
Av =

g m r0 Rs RL

1 + g m r0 RS RL

( 2.83) ( 20 1.2 0.5 )

Av = 0.495
1 + ( 2.83) ( 20 1.2 0.5 )

1
1
1.2 = 0.353 1.2 R0 = 0.273 k
RS =
2.83
gm
______________________________________________________________________________________
R0 =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.78
a.
R2
110
VG =
VDD =
(10 ) = 5.5 V
110 + 90
R1 + R2
I DQ =

10 (VG VGS )
RS

10 5.5 + VGS

V
= I DSS 1 GS
VP

V
= ( 2 )( 5 ) 1 GS
1.75

4.5 + VGS = 10 (1 1.143VGS + 0.3265VGS2 )

3.265VGs2 12.43VGS + 5.5 = 0
VGS =

12.43

(12.43) 4 ( 3.265)( 5.5 )

VGS
2 ( 3.265 )
2

= 0.511 V

0.511
I DQ = ( 2 ) 1
I DQ = 1.00 mA
1.75

VSDQ = 10 (1.00 )( 5 ) VSDQ = 5.0 V

b.

2 ( 2 ) 0.511
=
1
g m = 1.618 mA/V
1.75
1.75
(1.618 ) ( 5 10 )
=
Av = 0.844
Av =
1 + g m ( RS RL ) 1 + (1.618 ) ( 5 10 )

gm =

VGS
1
VP

g m ( RS RL )

2 I DSS
VP

R
i0 ( v0 / RL )
=
= Av i
ii
( vi / Ri )
RL
Ri = R1 R2 = 90 110 = 49.5 k
Ai =

49.5
Ai = ( 0.844 )
Ai = 4.18
10

c.

id = 1.0 mA
vsd = ( 3.33)(1.0 ) = 3.33 V

Maximum swing in output voltage = 6.66 V peak-to-peak

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
4.79
V
I DQ = I DSS 1 GS
VP

4
V
4 = 8 1 GS VGS = 4 1
VGS = 1.17 V
4
8

VSDQ = VDD I DQ ( RS + RD )
7.5 = 20 4 ( RS + RD ) RS + RD = 3.125 k

2 I DSS VGS 2 ( 8 ) 1.17

1
=
1
g m = 2.83 mA/V
4
4
VP VP
RS = 3.125 RD
gm =

Av =

g m RD
1 + g m RS

3 (1 + g m RS ) = g m RD

3 1 + ( 2.83)( 3.125 RD ) = ( 2.83) RD

9.844 2.83RD = 0.9433RD RD = 2.61 k RS = 0.516 k
VS = 20 ( 4 )( 0.516 ) VS = 17.94 V
VG = VS VGS = 17.94 1.17 = 16.77 V
R2
R2
VG =
VDD =
( 20 ) R2 = 335 k. R1 = 65 k
400
R1 + R2
______________________________________________________________________________________