Gaas Phemt Mmic Medium Power Amplifier, 17.5 - 25.5 GHZ: Features Typical Applications
Gaas Phemt Mmic Medium Power Amplifier, 17.5 - 25.5 GHZ: Features Typical Applications
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Typical Applications
Features
VSAT
Gain: 15 dB
Functional Diagram
General Description
The HMC442 is an efficient GaAs PHEMT MMIC
Medium Power Amplifier which operates between
17.5 and 25.5 GHz. The HMC442 provides 15 dB of
gain, +23 dBm of saturated power and 25% PAE from
a +5V supply voltage. The amplifier chip can easily be
integrated into Multi-Chip-Modules (MCMs) due to its
small size. All data is tested with the chip in a 50 Ohm
test fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.31mm (12 mils).
Min.
Frequency Range
Gain
Typ.
Max.
Min.
17.5 - 21.0
12
14.5
0.02
12
0.03
Max.
Min.
13.5
0.03
Max.
dB
0.03
10
dB
10
dB
18
21
18.5
21.5
19
22
dBm
20
23
20
23
20
23.5
dBm
27
dBm
29
Noise Figure
6.5
85
28
5.5
110
85
6
110
85
dB
110
3 - 16
dB/ C
10
Units
GHz
16
0.02
13
10
Typ.
24.0 - 25.5
15
0.02
15
Typ.
21.0 - 24.0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC442
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10
16
S21
S11
S22
-10
-20
12
+25 C
+85 C
-55 C
-30
0
14
17
20
23
26
29
16
17
18
19
FREQUENCY (GHz)
22
23
24
25
26
27
0
+25 C
+85 C
-55 C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
21
-10
-15
-20
-25
-10
-15
+25 C
+85 C
-55 C
-20
-25
-30
-30
16
17
18
19
20
21
22
23
24
25
26
27
16
17
18
19
FREQUENCY (GHz)
21
22
23
24
25
26
27
24
25
26
27
26
26
Psat (dBm)
30
22
18
+25 C
+85 C
-55 C
14
20
FREQUENCY (GHz)
P1dB (dBm)
20
FREQUENCY (GHz)
20
GAIN (dB)
RESPONSE (dB)
22
+25 C
+85 C
-55 C
18
14
10
10
16
17
18
19
20
21
22
23
FREQUENCY (GHz)
24
25
26
27
16
17
18
19
20
21
22
23
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC442
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24
35
Pout (dBm)
Gain (dB)
PAE (%)
20
16
12
8
4
0
-10
-6
-2
10
Pout (dBm)
Gain (dB)
PAE (%)
25
20
15
10
5
0
-10
14
-6
-2
10
30
8
NOISE FIGURE (dB)
IP3 (dBm)
10
14
34
26
22
+25 C
+85 C
-55 C
18
4
+25 C
+85 C
-55 C
14
0
16
17
18
19
20
21
22
23
24
25
26
27
16
17
18
19
FREQUENCY (GHz)
20
21
22
23
24
25
26
26
27
FREQUENCY (GHz)
26
24
-10
ISOLATION (dB)
22
20
18
16
14
Gain
P1dB
Psat
12
10
2.7
+25 C
+85 C
-55 C
-20
-30
-40
-50
-60
3.1
3.5
3.9
4.3
4.7
3 - 18
30
28
5.1
5.5
16
17
18
19
20
21
22
23
24
25
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442
v03.1007
+5.5 Vdc
-4 to 0 Vdc
Vdd (Vdc)
Idd (mA)
+4.5
82
+20 dBm
+5.0
85
Channel Temperature
175 C
+5.5
89
0.64 W
+2.7
79
+3.0
83
Thermal Resistance
(channel to die bottom)
141 C/W
+3.3
86
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Note: Amplifi er will operate over full voltage ranges shown above
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004
3. TYPICAL BOND IS .004 SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
3
LINEAR & POWER AMPLIFIERS - CHIP
Alternate
[2]
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC442
v03.1007
Pad Descriptions
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Pad Number
Function
Description
Vgg
RFIN
Vdd
RFOUT
Interface Schematic
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC442
v03.1007
0.076mm
(0.003)
RF Ground Plane
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Static Sensitivity:
strikes.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool
temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO
NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturers schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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