Scribd
Upload
68 views3 pages

ZTX689B ZTX689B: NPN Silicon Planar Medium Power High Gain Transistor

This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

Uploaded by

Adrian Nae
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
68 views3 pages

ZTX689B ZTX689B: NPN Silicon Planar Medium Power High Gain Transistor

This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

Uploaded by

Adrian Nae
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ZTX689B
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER

SYMBOL

MIN.

Transition Frequency

fT

150

Input Capacitance

Cibo

Output Capacitance
Switching Times

TYP.

MAX.

UNIT

CONDITIONS.

MHz

IC=50mA, VCE=5V
f=50MHz

200

pF

VEB=0.5V, f=1MHz

Cobo

16

pF

VCB=10V, f=1MHz

ton
toff

30
800

ns
ns

IC=500mA, IB!=50mA
IB2=50mA, VCC=10V

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1


Junction to Ambient2
Junction to Case

C
B

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX689B

ISSUE 1 MAY 94
FEATURES
* 20 Volt VCEO
* Gain of 400 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers

MAX.

UNIT

175
116
70

C/W
C/W
C/W

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

20

Collector-Emitter Voltage

VCEO

20

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

Practical Power Dissipation*

Ptotp

1.5

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

Tj:Tstg

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)


200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5
2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1
Single Pulse

0
0.0001

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-236

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base Breakdown
Voltage

V(BR)CBO

20

TYP.

MAX.

IC=100A

Collector-Emitter Breakdown
Voltage

V(BR)CEO

20

IC=10mA*

Emitter-Base Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off Current

ICBO

0.1

VCB=16V

Emitter Cut-Off Current

IEBO

0.1

VEB=4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.1
0.5

V
V

IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=1A, IB=10mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.9

IC=1A, VCE=2V*

Static Forward Current


Transfer Ratio

hFE

500
400
150
3-235

IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*

NPN SILICON PLANAR MEDIUM POWER


HIGH GAIN TRANSISTOR

ZTX689B
ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER

SYMBOL

MIN.

Transition Frequency

fT

150

Input Capacitance

Cibo

Output Capacitance
Switching Times

TYP.

MAX.

UNIT

CONDITIONS.

MHz

IC=50mA, VCE=5V
f=50MHz

200

pF

VEB=0.5V, f=1MHz

Cobo

16

pF

VCB=10V, f=1MHz

ton
toff

30
800

ns
ns

IC=500mA, IB!=50mA
IB2=50mA, VCC=10V

THERMAL CHARACTERISTICS
SYMBOL
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1


Junction to Ambient2
Junction to Case

C
B

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX689B

ISSUE 1 MAY 94
FEATURES
* 20 Volt VCEO
* Gain of 400 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers

MAX.

UNIT

175
116
70

C/W
C/W
C/W

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

20

Collector-Emitter Voltage

VCEO

20

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

Continuous Collector Current

IC

Practical Power Dissipation*

Ptotp

1.5

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

Tj:Tstg

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at Tamb = 25C)


200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5
2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1
Single Pulse

0
0.0001

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-236

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base Breakdown
Voltage

V(BR)CBO

20

TYP.

MAX.

IC=100A

Collector-Emitter Breakdown
Voltage

V(BR)CEO

20

IC=10mA*

Emitter-Base Breakdown
Voltage

V(BR)EBO

IE=100A

Collector Cut-Off Current

ICBO

0.1

VCB=16V

Emitter Cut-Off Current

IEBO

0.1

VEB=4V

Collector-Emitter Saturation
Voltage

VCE(sat)

0.1
0.5

V
V

IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=1A, IB=10mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.9

IC=1A, VCE=2V*

Static Forward Current


Transfer Ratio

hFE

500
400
150
3-235

IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*

ZTX689B
TYPICAL CHARACTERISTICS
Tamb=25C

IC/IB=200
IC/IB=100
IC/IB=10

0.8

VCE(sat) - (Volts)

VCE(sat) - (Volts)

0.8

0.6

0.4

0.2

0.01

0.1

0.4

10

0.1

10

VCE(sat) v IC

VCE(sat) v IC

VCE=2V
1.6

1.0

1K

0.8
0.6

500

0.4
0.2

VBE(sat) - (Volts)

1.5K

1.2

1.4

-55C
+25C
+100C
+175C

IC/IB=100

1.2
1.0
0.8
0.6
0.4
0.2

0.01

0.1

10

1.4

VBE(sat) v IC

-55C
+25C
+100C
+175C

VCE=2V

1.0
0.8
0.6
0.4
0.2
0

hFE v IC

1.2

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

1.6

0.01

IC - Collector Current (Amps)

10

VBE - (Volts)

0.01

IC - Collector Current (Amps)

hFE - Typical Gain

hFE - Normalised Gain

0.6

IC - Collector Current (Amps)

+100C
+25C
-55C

1.4

IC/IB=100

0.2

1.6

-55C
+25C
+100C
+175C

0.01

0.1

Single Pulse Test at Tamb=25C

0.1

0.01
0.1

10

D.C.
1s
100ms
10ms
1.0ms
0.1ms

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-237

10

100

You might also like