Logic Family Introduction and Overview
Logic Family Introduction and Overview
Moores Law
In 1965, Gordon Moore predicted that the number of transistors that
can be integrated on a die would double every 18 to 14 months
i.e., grow exponentially with time
BJT
transistor types
TTL
MOSFET
(NMOS, PMOS)
CMOS
10
Fall Time
Time from 90% to 10% of signal, High to Low
rise time
10%
fall time
90%
90%
10%
Propagation
delays.
Power Dissipation
Static
I2R losses due to passive components, no input signal
Dynamic
I2R losses due to charging and discharging capacitances through resistances,
due to input signal
Noise
Stray electric/magnetic fields can induce voltages on the connecting
wires between logic circuits
Called noise, these unwanted, spurious signals can sometimes cause
unpredictable operation.
Noise Margin
Manufacturers specify voltage limits to represent the logical 0
or 1.
These limits are not the same at the input and output sides.
For example, a particular Gate A may output a voltage of 4.8V when it
is supposed to output a HIGH but, at its input side, it can take a
voltage of 3V as HIGH.
Noise Margin
If noise in the circuit is high enough
it can push a logic 0 up or drop a
logic 1 down into the indeterminate
or illegal region
The magnitude of the voltage
required to reach this level is the
noise margin
Noise margin for logic high is:
NMH = VOHmin VIHmin
logic 1
VOHmin
VIHmin
indeterminate
input voltage
logic 0
VILmax
VOLmax
Noise Margin
Difference between the worst case output voltage of one stage and
worst case input voltage of next stage
Greater the difference, the more unwanted signal that can be added
without causing incorrect gate operation
NMhigh = VOHmin - VIHmin
NMlow = VILmax - VOLmax
Worked Example
Given the following parameters, calculate the
noise margin of 74LS series.
Parameter
VIH(min)
VIL(max)
VOH(min)
VOL(max)
74LS
2V
0.8V
2.7V
0.4V
Solution:
Current-sourcing action.
When the output of gate 1 is HIGH, it supplies
current IIH to the input of gate 2.
Which acts essentially as a resistance to ground.
Current-sinking action.
Input circuitry of gate 2 is represented as a resistance tied to
+VCC the positive terminal of a power supply.
When gate 1 output goes LOW, current will flow from the
input circuit of gate 2 back through the output resistance of
gate 1, to ground.
Circuit output that drives the input of gate 2 must be able to sink a
current, IIL , coming from that input.
Digital Systems: Principles and
Applications, 11/e
Ronald J. Tocci, Neal S. Widmer, Gregory
Speed-Power Product
Speed (propagation delay) and power consumption
are the two most important performance parameters
of a digital IC.
A simple means for measuring and comparing the
overall performance of an IC family is the speedpower product (the smaller, the better).
For example, an IC has
an average propagation delay of 10 ns
an average power dissipation of 5 mW
the speed-power product = (10 ns) x (5 mW)
= 50 picoJoules (pJ)
Electrical Characteristics
TTL
faster (some versions)
strong drive capability
rugged
CMOS
5.0V
Logic 1
Logic 1
3.5V
2.5V
Indeterminate
Indeterminate
0.8V
0V
1.5V
Logic 0
Logic 0
0V
TTL
CMOS
Logic Family
33
Diode Basics
43
Essentially
diode logic
with
transistor
amplification
reduced
power
consumption
faster than
RTL
TTL
The evolution from DTL to TTL can be seen by observing the placement of p-n junctions. For example, the
diode D2 from DTL can be replaced by a transistor whose collector is pulled up to the power supply;
transistor Q2 in Figure 1. The p-n junction of D2 is replaced by the BE junction of Q2 and with the current
gain of the transistor, the current going into the base of Q3 is greatly increased, increasing the fanout. The
input diodes and D1 are replaced by the multi-emitter NPN transistor, Q1, in Fig. 1 and represented by the
drawing in Figure 2. we will consider the input transistor, Q1, to act just like two diodes. The transistor
Q2, however, will operate in all three regions. The treatment of the output voltages and currents will be
treated the same as the DTL gate and Q3 will either be cutoff or saturated, corresponding to an output
high and an output low, respectively
I B2
0.5 mA
1
0.5
31
0.016mA
Because this current is coming out of the collector of Q1, the base- collector
junction of Q1 is on, and is modeled as a diode in Figure 4.
5.0 19
.
I1
0.775mA
4K
This is considerably more than is going into the base of Q2, therefore, the input BE junction of Q1 will also
still be conducting. The maximum voltage at the input is
VinLmax = 1.9 - 0.7 = 1.2 Volts
The circuit model for the TTL gate with all inputs high is shown in Figure 5. Both Q2 and Q3 are modeled as
saturated, an assumption that must be verified. With the inputs high, Q1 is modeled as two diodes with the B-E
diodes cutoff, and B-C diode conducting.
Figure 5. TTL gate circuit model with all inputs high. The voltage
at the base of Q1 is
VB1 = 0.8 + 0.8 + 0.7 = 2.3 Volts.
The current down through the 4 KW resistor, I1 is
5.0 2.3
I1
4K
0.675mA
2.857mA
And the collector current is
IC2 =
2
14
. K
Now let's turn our attention back to the input and determine VinHmin and IinH . We will define the input
voltage to be high as long as no current goes out the input terminal. Thus, all we have to do is keep
the input voltage high enough so that the B-E p-n junction of Q1 does not turn on. Thus,
VinHmin = 2.3 - 0.6 = 1.7 Volts
CALCULATION OF IinH
With the input voltage at a high, say 5 volts, the transistor Q1 will be operating in the reverse active mode.
The B-E junction is reverse biased, and the B-C junction is forward biased with a base current of 0.675 mA.
If there were significant curent gain, you would expect to see a large current going into the input. However,
the reverse is typically on the order of 0.02. Thus,
This current would add to the current going into the base of Q2, but is ignored
because it is quite small and because R is made as small as possible and this input
current is a maximum and cannot be counted on.
OUTPUT LOW
Figure 7 shows the TTL circuit with all inputs high and the output low. The models for the transistors are shown as
before, except diode D and transistor Q4 are added and shown as cutoff. The analysis of this circuit proceeds exactly
the same as before. The currents, I1, I2, I3, and IB3 are the same as before. With the diode and Q4 not conducting,
IoLmax is now the same as IC4max , 81.96 mA. We only need to show that the diode D and transistor Q4 are indeed off.
The voltage at the bottom of the diode is 0.2 Volts and the voltage at the base of Q4 equal to the voltage at the
collector of Q2; VC2 = (0.2 + 0.8) = 1.0 Volts. Thus, the voltage across the B-E junction of Q4 plus the diode is 0.8 Volts.
If one conducts, the other must also. To take both out of cutoff would require at least 0.5 + 0.6 = 1.1 Volts. Thus,
both are off.
Figure 7. TTL gate with totempole output circuit model with
inputs high
OUTPUT HIGH
This condition occurs when one or more inputs are low. The circuit is shown in Figure 8 with the appropriate models used
for the transistors and the diode. In this case, Q2 and Q3 are both cutoff while Q4 and the diode are conducting. We have
to assume here that there is some load and that the output current is not zero.
The current coming out the output terminal
IS (=-Io ) is the sum of the currents coming down
through the base and the collector. Thus,
IS = IB4 + IB4
Because each TTL load represents 13 mA, if we
assume there are 10 loads, then IS = 130 mA. The
base current is
I B4
130mA
4.2 mA
1
Tri-State Logic
Both output transistors of totem-pole output are turned off
Usually used to bus multiple signals on the same wire
Gates not enabled present high-Z to bus and therefore do
not interfere with other gates putting signals on the bus
Tri-State Logic
TTL Subfamilies
76
TTL Series
Standard TTL
High-speed TTL
Low-power TTL
Schottky TTL
Low-power Schottky TTL
Advanced Schottky TTL
Advanced Low-power Schottky TTL
Prefix
74
74H
74L
74S
74LS
74AS
74ALS
Example
7486
74H86
74L86
74S86
74LS86
74AS86
74ALS86
78
CMOS Series
Prefix
Example
Original CMOS
Pin compatible with TTL
High-speed and pin compatible with TTL
High-speed and electrically compatible with TTL
Very High-speed and pin compatible with TTL
40
74C
74HC
74HCT
74VHC
4009
74H04
74HC04
74HCT04
74VHC04
74VHCT
74AHC
74AHCT
74FCT
74FCT-T
74VHCT04
74AHC04
74AHCT04
74 FCT 04
74 FCT04T
5V 0.5 V
VIH = 2V
VIL = 0.8V
Electrical Characteristics
output voltage
(worst case)
max input currents
propagation delay
noise margins
Fan-out
5 Volt
Input
Range
for 1
VOH = 2.7V
VOL = 0.5V
IIH = 20A
IIL = -0.4mA
tpd = 15 nS
for a logic 0 = 0.3V
for a logic 1 = 0.7V
20 TTL loads
Output
Range
for 1
2.7
2.0
Input
Range
for 0
0.8
0.5
0 Volt
Output
Range
for 0
Wired-AND
Open collector outputs connected together to a common pullup resistor
Any collector can pull the signal line low
Logically an AND gate
SSI Devices
Each package contains a code identifying the package
N74LS00
Manufacturers Code
N = National Semiconductors
SN = Signetics
Specification
Family
L
LS
H
Member
00 = Quad 2 input NAND
02 = Quad 2 input Nor
04 = Hex Invertors
20 = Dual 4 Input NAND
2003
1960
Higher performance
Lower power
New features
New signaling threshold
Products considered to be
mature are about 2 decades
into their life cycle
High-volume production
Multiple suppliers
Low prices
1.6K
R2
130
R3
Q
Q2
A
B
D
D3
Y O/P
Q
1
D2
I CQ1
I
CQ1
Q
1
Q
2
Q
3
Q
4
Y O/P
ON
OFF
OFF
ON
ON
OFF
OFF
ON
ON
OFF
OFF
ON
OFF
ON
ON
OFF
1K
R4
Q1
D
O/P
I/P
Q1
Q2
O/P
ON
OFF
OFF
ON
I/P
Q2
S
vi