STMicroelectronics

Deep Sub-Micron Processes

0.18, 0.12, 90nm CMOS

CMP annual users meeting, 13 January 2006, PARIS

Feature Size

Higher the density

Lower the power
More system Integration
More Process Features

AMS 0.8
1.2k gates/mm 2

1994 at CMP

AMS 0.6
3k gates/mm 2

AMS 0.35
18k gates/mm 2

ST 0.25
35k gates/mm 2

ST 0.18
80k gates/mm 2

ST 0.12
180k gates/mm 2

ST 90nm
400k gates/mm 2

2004 at CMP
CMP annual users meeting, 13 January 2006, PARIS

Process Roadmap
Feature size, 1983 - 2010
Size, microns

3,5
3

Industry (SIA where available)

2,5

CMP
2
1,5
1
0,5
0
84

86

88

90

92

94

96

98

00

02

04

06

08

10

Year

CMP annual users meeting, 13 January 2006, PARIS

HCMOS8D

STMicroelectronics CMOS 0.18

HCMOS8D

CMP annual users meeting, 13 January 2006, PARIS

HCMOS8D Process Features

0.18 mixed A/D CMOS SLP/6LM
Gate length (0.18 m drawn, 0.15 m effective).
Shallow trench isolation process.
Up to 6 levels metal layers with fully stackable contacts and vias.
MIM precision capacitors.
Thick Metal6.
Power supply: 1.8 V. (Abs. Maximum 1.95 V)
Threshold voltage: VTN = 0.5 V, VTP = - 0.5 V.
Ion : TN @ 1.8 V : 500 A/m
Ion : TP @ 1.8 V : 210 A/m

CMP annual users meeting, 13 January 2006, PARIS

HCMOS8D

Metal/Metal Capacitors:
Metal5/Metal5-bis in HCMOS8D

2 types of MOSes in HCMOS8D :

High Performance MOSes
Low Leakage MOSes.

CMP annual users meeting, 13 January 2006, PARIS

HCMOS8D Process
Introduced by CMP in Q4 99
~ 120 centers received design rules and design-kits

1 Last MPW run in 2005 (2 runs in 2004)

1 circuit fabricated
(15 circuits in 2004)

MPW stopped in 2005.

140
120

mm

100
80
60
40
20
0

2001

2002

2003

2004

2005

CMP annual users meeting, 13 January 2006, PARIS

HCMOS9 Process From STMicroelectronics

STMicroelectronics CMOS 0.12

HCMOS9

CMP annual users meeting, 13 January 2006, PARIS

HCMOS9 Process Features

0.12 mixed A/D CMOS SLP/6LM (triple Well)
Gate length (0.13 m drawn, 0.11 m effective).
6 Cu metal layers. (Up to 8 metal layers in option)
Low k inter-level dielectric
Power supply: 1.2 V
Multiple Vt transistor offering
(Ultra low leakage, low leakage, High speed)
Threshold voltages (for 3 families above) :
VTN = 570/500/380 mV, VTP = 590/480/390 mV
Isat (for 3 families above) :
TN @ 1.2 V : 410/535/680 uA/mic; TP @ 1.2 V : 170/240/320 uA/mic
CMP annual users meeting, 13 January 2006, PARIS

HCMOS9 Process
0.12 mixed A/D CMOS SLP/6LM introduced by CMP in Q4 2001
~ 110 centers received design rules, design-kits
(80 in 2004)

7 runs organized in 2005

60 circuits (13 from France + 47 abroad)

2500 Euro/mm 2
(25 samples for which 5 are packaged)

6 levels Cu Metal (Cross Section View)

Courtesy STMicroelectronics

Open to every Institution or Company.

(under NDA)

350
300

mm

400

250
200
150
100
50
0

2003

2004

2005

CMP annual users meeting, 13 January 2006, PARIS

CMOS090 Process From STMicroelectronics

STMicroelectronics CMOS 90nm

CMOS090

CMP annual users meeting, 13 January 2006, PARIS

CMOS090 CMOS 90nm Process Features

65nm poly length (90nm drawn)
Triple Vt MOS transistors
Dual gate oxide
Dedicated process flavors for high performance or low power
Dual-damascene copper for interconnect.
7 metal layers for interconnection
0.28um metallization pitch.
Analog / RF capabilities.
Fully compatible with e-DRAM
Various power supplies supported : 3.3V, 2.5V, 1.8V, 1.2V, 1V
Dual standard cell libraries (speed / density)
(430 kgates/mm2 / 350 kgates/mm2).
Total of > 1000 core cells
Gate delay of 11ps (standard Vt)
Embedded memories SRAM / ROM
CMP annual users meeting, 13 January 2006, PARIS

CMOS090 Process

90nm mixed A/D CMOS 7LM introduced by CMP in Q3 2004

100 customers received design rules, design-kits

7 MPW runs planned in 2005

5000 Euro/mm2
(25 samples for which 5 are packaged)

Open to every Institution or Company, (under NDA).

CMP annual users meeting, 13 January 2006, PARIS

More Than 100 Customers Are Using The STs 90nm CMOS From CMP
Ghent Univ., Ghent
BELGIUM
KU.Leuven ESAT-MICAS, Leuven
BELGIUM
UFRGS Instituto de Informatica, Porto Alegre BRAZIL
Universidade Federal Do Rio DeJaneiro
BRAZIL
CMC Microsystems, Kingston
CANADA
Carleton University
CANADA
Dalhousie University, Halifax
CANADA
Ecole Polytechnique de Montreal
CANADA
McGill University, Montreal
CANADA
McMaster University, Hamilton
CANADA
Queen's University, Kingston
CANADA
Royal Military College of Canada,
Kingston
CANADA
Simon Fraser University, Burnaby
CANADA
The University of Calgary
CANADA
University of Alberta,Edmonton
CANADA
University of British Columbia, Vancouver
CANADA
University of Toronto
CANADA
University of Waterloo
CANADA
University of Windsor
CANADA
Technical University of Denmark, Lingby
DENMARK
NANGATE A/S,Herlev
DENMARK
University of Turku
FINLAND
VTT Information Technology, Espoo
FINLAND
SPINTEC, Grenoble
FRANCE
GET/ENST, Paris
FRANCE
Ecole Polytechnique Universitaire de Tours
FRANCE
ENST, Brest
FRANCE
LASTI-ENSSAT, Lannion
FRANCE
Groupe Esiee, Noisy Le Grand
FRANCE
ISEN, Lille
FRANCE
IEF, Univ. Paris Sud, Orsay
FRANCE
LE2I, Univ. Bourgogne, Dijon
FRANCE
LIRMM, Montpellier
FRANCE
TIMA, Grenoble
FRANCE
University of Stuttgart
GERMANY
Heinz Nixdorf Institute, Univ. Paderborn
GERMANY
University of Patras
GREECE
Chinese University of Hong Kong
HONG KONG
Politecnico Di Milano
ITALY
Universit degli studi di Pavia
ITALY
Universita Degli Studi di Pisa
ITALY
Universita Della Calabria, Arcavacta di Rende ITALY
Universit Di Bergamo
ITALY
University Of Perug
ia
ITALY
University of Naples "Federico II"
ITALY
Universit Di Siena
ITALY

University Of Parma
University Of Modena And Reggio Emilia
Tohoku University, Sendai
Norwegian Univ. of Sc. & Techno., Trondheim
University of Oslo
University Of The Philippines, Diliman
St. Petersburg State University
Taganrog State Univ. Of Radioengineering
Moscow Institute Of Electronic Technology
Nanyang Technical University, Singapore
Universidad de Zaragoza
Universitat Politechnica De Catalunya
InstitutoMicroelectronica Sevilla
Chalmers University of Technology
Linkping University
Mid Sweden University, Sunds
vall
ETH Zurich
Universit de Neuchtel
CERN, Geneva
NECTEC, Bangkok

ITALY
ITALY
JAPAN
NORWAY
NORWAY
PHILIPPINES
RUSSIA
RUSSIA
RUSSIA
SINGAPORE
SPAIN
SPAIN
SPAIN
SWEDEN
SWEDEN
SWEDEN
SWITZERLAND
SWITZERLAND
SWITZERLAND
THAILAND

University College London

Imperial College of Science, London
Lime Microsystems L
td, Haslemere
University of Bath
University of Edinburgh
University Of Glasgow
University Of Manchester
University Of Sheffield
Achronix Semiconductor Llc, Ithaca NY
Berkeley Wireless Research Center
Carnegie Mellon Univer
sity, Pittsburgh
Columbia University, New York
Forza Silicon Corp., Pasadena, CA
Johns Hopkins University
MIT, Cambridge
Stanford University
SiBEAM Inc, Fremont
Sun Microsystems Inc., Mountain View, CA
UCLA, Los Angeles, Ca
University Of Santa Cruz
University Of Michigan
University of Rochester
Washington State University, Pullman
University Of Texas At Dallas

UK
UK
UK
UK
UK
UK
UK
UK
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA
USA

CMP annual users meeting, 13 January 2006, PARIS

Designs Fabricated in 2005

32 designs have been fabricated in 90nm CMOS in 2005.
14 customers have submitted their designs :
Berkeley Wireless Research Centre (BWRC, USA)
ETH-Zurich (Switzerland)
Sun Microsystems (USA)
UCLA (USA)
University of Stuttgart (Germany)
VTT (Finland)
INFN (Italy)
University of Oslo (Norway)
Norwegian University of Science and Technology (Norway)
Stanford University (USA)
CMC Microsystems (Canada)
University of Pisa (Italy)
Massachusetts Institute of Technology (MIT) (USA)
Achronix Semiconductor LLC (USA)

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS6G Process From STMicroelectronics

STMicroelectronics SiGe 0.35

BICMOS6G

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS6G process specifications

Complementary bipolar process with vertical NPN & vertical
isolated PNP

Single layer poly / 5 layers metal

Metal 5 is thick 2.5 Alu (high Q inductances, power supplies)

MIM capacitors available : 2nF/mm2 and 5nF/mm2

High resistive poly: 1 k
/sq

NPN 3.3 V (FT = 45 GHz, = 0.8dB)

NPN 5.0 V (FT = 25 GHz)

Standard Power Supplies: 3.3 V or 5.0 V

CMP annual users meeting, 13 January 2006, PARIS

CMP annual users meeting, 13 January 2006, PARIS

CMP annual users meeting, 13 January 2006, PARIS

CMP annual users meeting, 13 January 2006, PARIS

CMP annual users meeting, 13 January 2006, PARIS

Applications

High performance RF designs

HBT components with high Ft and low noise.

High Q integrated passive components (R, L, C)

High Performance mixed A/D designs

HBT bipolar + CMOS : Excellent Analog environment

Standard digital cells libraries

System on chip designs

High density CMOS digital library

N-ISO layer for blocks isolation (RF / Analog / Digital / )

CMP annual users meeting, 13 January 2006, PARIS

MPW runs

Introduced at CMP in 2000
50 customers received design rules and design-kits

950 Euro/mm2

Minimum charge is the price of 3 mm2.

Delivery of 25 samples for which 5 are packaged.

Open to every Institution or Company, (under NDA).

3 MPW runs scheduled in 2006.

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS7RF Technology
0.25m SiGe:C BiCMOS process
For RF and Power Applications

Cellular Terminals Division

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS Technologies
BICMOS9

2003

BICMOS7RF

0.13m CMOS

0.25m CMOS

SiGe-C, fT/Fmax=150GHz/ 150GHz

SiGe-C, fT/Fmax=60GHz/90GHz

2002
BICMOS8X
0.18m CMOS

2001

2000

1999

O
PT
IC

SiGe, fT/Fmax=70GHz/90GHz

AL

CO

BICMOS7

M
M

0.25m CMOS

UN
IC
AT
IO
N

SiGe, fT/Fmax=70GHz/90GHz

RF

BICMOS6G

AT
C
LI
P
AP

S
N
IO

0.35m CMOS
SiGe, fT/Fmax=45GHz/60GHz

1998

BICMOS6/6M
0.35m CMOS
Si, fT/Fmax=25GHz/40GHz

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS7RF Definition & Objectives

The next technology for RF applications (after BiCMOS6G)
An optimization of BiCMOS7 to address RF needs, BiCMOS7
being more dedicated to optical networks market (f >5Ghz).
Compared to BiCMOS6G, BiCMOS7RF :
Have a better HF noise figure
Reduced substrate coupling
Allow power amplifier integration
Offer high performance passive devices
Increase CMOS density

CMP annual users meeting, 13 January 2006, PARIS

General Features 1/3

CMOS
Use of HCMOS7 as the base process
5 nm gate oxide
0.25 m gate length
Shallow trench isolation
Gate type N+ and P+
Silicidation of gates and junctions for low
access resistance
Supply voltage 2.5V (2.7V max)

50W.cm SUBSTRATE

CMP annual users meeting, 13 January 2006, PARIS

General Features 2/3

BIPOLAR
SiGe:C epitaxial base (non selective)
Deep trench isolation
Quasi self aligned structure
Low-voltage HBT (Ft=55GHz typ BVCEO=2.8V
min)
High-voltage HBT (Ft=30GHz typ BVCEO=6.0V
typ)
Low Noise Characteristics (Nfmin=0.4dB at 2GHz)

OTHER DEVICES
Polysilicon resistors: P & N type (85 & 180W/sq)
N+ Active resistor (60W/sq)
Poly/N+ sinker capacitor (2.88fF/m)
CMP annual users meeting, 13 January 2006, PARIS

General Features 3/3

OPTIONS
HV NLDEMOS (2.5V BVDS=13.5V min WxRon=3W.mm typ)
High value poly resistor (1kW/sq)
Isolated N-channel MOS
Isolated Vertical PNP (Ft=6GHz typ BVCEO=9.5V typ)
5fF/m MIM capacitor
Precise TaN resistor (35W/sq; +/-10%)

BACK END
5 metal levels / thick top metal 2.5m
M1 in Tungsten; M2 M5 in Aluminium
M5 in thick copper 4m (option)
Bumping

CMP annual users meeting, 13 January 2006, PARIS

BiCMOS7RF Devices List

MOSFETs
 2.5V N&P MOSFETs
 Drift N&P MOS transistors
 Isolated NMOS transistor
 HV NLDEMOS transistor (option)
 LV NLDEMOS transistor (option)
 LV PLDEMOS transistor (option)

Capacitors
 5fF/m MIM capacitor
 N+ Poly/NWell capacitor
 N+ Poly/N+ Sinker capacitor

Junction Diodes
N+/Pwell
 P+/Nwell


Bipolar Transistors
 Low-voltage SiGe:C NPN HBT
 High-voltage SiGe:C NPN HBT
 Isolated vertical PNP BJT (option)
 Lateral PNP transistor
Resistors
 Silicided N+ Poly
 Unsilicided N+ Active
 Unsilicided N+ Poly
 Unsilicided P+ Poly
 Nwell under STI
 Hipo
 Precise TaN (option)

Varactors
P+/Nwell diode
 P+/Nwell diode with differential structure
 MOS transistor


Thick Metal Inductors

 Single-ended indcutors
 Symmetrical and differential inductors

CMP annual users meeting, 13 January 2006, PARIS

Technological Masks
Core Process (2.5V CMOS, HBTs)
PA Bipolar Cell
HV NLDEMOS option
IVPNP BJT option
Isolated NMOS option
High Value Poly Resistor (hipo) option
5fF/m MIM Capacitor option

29 masks
free
2 masks
2 masks
1 mask (free if IVPNP)
1 mask
1 mask

Future Option
Precise TaN Resistor
LV NLDEMOS option
LV PLDEMOS option

1 mask
2 masks (1 if HV NLDEMOS)
2 masks

CMP annual users meeting, 13 January 2006, PARIS

BICMOS7RF MPW runs

1500 Euro/mm2

Minimum charge is the price of 3 mm2.

Delivery of 25 samples for which 5 are packaged.

Open to every Institution or Company, (under NDA).

3 MPW runs expected in 2006.

CMP annual users meeting, 13 January 2006, PARIS

Some Advices for Design Submission

Common Advices to all ST processes :

Special care on Minimum and Maximum densities for each layer :

- Especially for the analog and RF circuits.
- Design submission : Inform CMP on your requirements for dummies filling.

Special attention to the MIM capacitor layout design.

Padring : should always use the IOFILLER cells for pad abutments.

Special attention to the type of CORNER cells to use

(contact CMP for more information)

CMP annual users meeting, 13 January 2006, PARIS

STMicroelectronics
MPWs IN 2005
15 MPWs, 1 taxi, 96 circuits, 577 mm
HCMOS9GP: 7 MPWs, 60 circuits, 375 mm
CMOS090: 6 MPWs, 32 circuits, 165 mm
BiCMOS6G: 1 MPW, 2 circuits, 23 mm
BiCMOS7RF: 1 MPW, 1 circuit, 10 mm
HCMOS8D: 1 taxi, 1 circuit, 4 mm

CMP annual users meeting, 13 January 2006, PARIS

STMicroelectronics
EVOLUTION 2004/2005
(number of circuits)
60
50
40
2004
2005

30
20
10
0
CMOS090

HCMOS9GP

HCMOS8D

BiCMOS6G BiCMOS7RF

CMP annual users meeting, 13 January 2006, PARIS

STMicroelectronics
TYPES OF CIRCUITS
Industry: 13, Research: 66, Education: 13
70
60
50
Industry
Research
Education

40
30
20
10
0
France Europe N. Am.

Asia

* Data for Europe include France

3

CMP annual users meeting, 13 January 2006, PARIS