Electronics Lab Reports
Electronics Lab Reports
Q1 Q2
IB IC IE HFE IB IC IE HFE
0.5 3.9uA 941.47uA 947.219uA 4.8 uA 119.8uA 94.9uA 24.9583
1 45.96uA 9.54mA 9.574mA 40.3uA 7.72mA 7.39mA 191.5633
2 142.11uA 27.8mA 27.118mA 137.7uA 29.55mA 29.80mA 214.5969
3 240.25uA 43.07mA 43.27mA 235.4uA 52.2mA 53mA 221.7502
4 339.28uA 57.87mA 58.207mA 334.9uA 77.8mA 76.4mA 232.3018
5 437.87uA 71.67mA 72.667mA 432uA 97.8mA 98.1mA 226.3889
OBSERVATION AND ANALYSIS:
As we can observe in the table above, table 1. The values of the emitter current is
approximately to the sum of the collector current and the base current in each assigned value
of
VCE= 2V
VCE = 4V
IB
IC HFE
IB IC
HFE
2 0 2.018pA 0A 0 4 0 4.023pA 0A 0
2.10 0.5 11.546uA 932.587uA 80.77 4.10 0.5 55.511nA 5.329uA 95.999
2.3 1.0 33.64uA 2.81mA 83.532 4.3 1.0 33.64uA 3mA 89.18
3.66 1.5 81.268uA 6.913mA 85.064 4.85 1.5 81.268uA 7.392mA 90.958
4.44 2.0 129.896uA 11.185mA 86.107 5.2 2.0 129.896uA 11.896mA 91.58
5.2 2.5 179.19uA 15.431mA 86.115 5.8 2.5 179.19uA 16.549mA 92.354
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 31 of 4
OBSERVATION AND ANALYSIS:
When the
. The same
statements of observation will be as of the same effect as that of
.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 32 of 4
GENERALIZATION:
Even though the
and
Follow-Up Activty:
Checking a NPN or PNP transistor
For a NPN transistor:
1. Connect the collector leg to the positive lead and the base leg to the negative lead. The
analog tester should measure and give you a high resistance.
2. Connect the emitter leg to the positive lead and the base leg again to the negative leg.
The resulting measurements should be similar to (1).
3. This time reverse the connections. Collector negative lead; Base positive leg. This
will yield a low measurement of resistance. Reverse the connections stated in (2) to
also acquire a low value of resistance.
4. If items 1 up to 3 have been done without any error, it means that your NPN transistor is
functional.
For a PNP transistor:
Same as the instructions on NPN transistor checking HOWEVER the base should be
connected to the positive lead to check for the high resistance and to the negative to
check for the low resistance. If results match to the one stated here, then your PNP
transistor is functional.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 33 of 4
Activity 8
BJT Operating Region
Name: ____________________________________
____________________________________
____________________________________ Date Performed: ____________
Section: _________ Date Submitted: ____________
Laboratory Instructor: _____________________________________
RESULTS ANS ANALYSIS
Table 1 Transistor Specification
Parameters Value
Product Number/Code MPS2222A
HFE(min, typ, max) 100 - 300
VCEO 40 V
Collector Continuous Current or ICmax 600 mA
VCEsat 0.6 V - 0.3 V
VBEsat 1.2 V
Table 2 Operating Region
VBB IB IC IE VCE VBE VCB
0 V 0 mA 0 mA 0 mA 15 V 0 V 15V
1.007 V 0 mA 128.69 mA 128.18 mA 8.976 V 0.75V 8.225V
2.007 V 0 mA 300.813 mA 303.205 mA 861.82m V 0.81V 50.652m V
3.010 V 4.353 mA 313.513 mA 317.876mA 264.412mV 0.83 V -569.024mV
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ECEM312 Electronics 1 Laboratory 34 of 4
4V 6.299mA 313.871mA 320.17mA 248.053mV 0.85V -602.547mV
5.04V 8.347mA 314.054mA 322.4mA 239.482mV 0.87V -627.214mV
6V 10.239mA 314.162mA 324.40mA 234.41mV 0.88V -645.95mV
7V 12.213mA 314.243mA 326.46mA 230.59mV 0.89V -663.08mV
8V 14.89mA 314.305mA 328.49mA 227.67mV 0.91V -678.56mV
-1V 0 1.78A 23.943pA 15V -0.99V 16V
-2V 0 1.78A 24.273pA 15V -2V 17V
-3V 0 1.78A 25.504pA 15V -3V 18V
OBSERVATIONS AND ANALYSIS:
We observe the terminals of a BJT and see that the emitter-base junction is at least 0.6-
0.7 volts, the transistor is in the cutoff region. In cutoff, the transistor appears as an open circuit
between the collector and emitter terminals. Also, the transistor appears as an open circuit
between the collector and emitter terminals. We can also see that there is a certain point in
time where the base current has increased beyond the point where it can cause the collector
current flow to increase. The transistor is able to amplify small variations in the voltage present
on the base. The output is extracted at the collector. In the forward active state, the collector
current is proportional to the base current by a constant multiplier called beta,
The stated observations show the different operating regions of a BJT, namely: cut off,
saturation and forward active region.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 35 of 4
Table 3 Range of VBB for each operating region
Mode of operation Cut-off Active Saturation
Range of VBB
Table 4 Factor that affects Collector current
IC
Normal Condition (VCE=1/2 of VCC) 160mA, 7.48V
Different value of VCC 139.4mA,3.77V
Different value of RC 169.77mA,9.397 V
Effect of Temperature Lower value.
OBSERVATIONS AND ANALYSIS:
We can see the changes in the range of VBB in Table 3, which shows the differences of
the three operating regions of BJT. BJT design that affect IC: base material, nonuniform base
doping, nonuniform material composition, and the high-level injection effect. The said are the
ones which affects the values of Ic in the BJT circuit. We can see in the data that the values of Ic
are interrelated yet little discrepancies happen due to subtleties that it undergo.
GENERALIZATION:
There are three operating modes in BJT. The modes of BJT depends on hoe its junctions
Emitter-Base and Base-Collector are biased. First, the ACTIVE REGION, forward-biased in EB
Junction and reversed biased in BC Junction. Next, the Cut-Off Region which is under a reversed
biased condition in EB and BC Junction. On the other hand, under Saturation Condition, it is
both forward biased in EB and BC Junction. IC changes as the operating modes changes, its also
alters its values due to its different subtitles.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 36 of 4
FOLLOW-UP ACTIVITY:
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 37 of 4
Activity 9
Bipolar Junction Transistor as Switch
Name: ____________________________________
____________________________________
____________________________________ Date Performed: ____________
Section: _________ Date Submitted: ____________
Laboratory Instructor: _____________________________________
RESULTS AND ANAYSIS
Table 7 Transistor Specification
Parameters Value
PRODUCT Number 2sc2655
HFE( min, typ., max.) MIN: 70; TYP: N/A; MAX: 240
ICmax 1 A
VCEsat 0.5 V
VBEsat(min, max) 1.2 V
Transistor Inverter Design:
RC: 1.150 k = 1.2 k RB: 19.2 k = 20 k (potentiometer)
Table 2 Transistor LED Driver
Fig. 1 Fig. 2
VBB IC VCE LED state IC VCE LED state
0V 8.282 mA 2.061 V ON 0.00176 mA 10.99 V OFF
1V 8.294 mA 2.064 V ON 1.732 7.979 V ON
3V 9.429 mA 685.018 mV ON 8.141 169.696 mV ON
6V 9.903 mA 116.179 mV ON 8.193 107.328 mV ON
10V 9.921 mA 94.475 mV ON 8.209 87.842 mV ON
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 38 of 4
OBSERVATION AND ANALYSIS:
Given the figure 1 data in Table 2 we can see that VCE is inversely proportional with the value
of IC. This is due to how voltage supply increases, that the collector current increases and V
CE
decreases. With V
CE
decreasing, the base volatage is increasing. And since V
CE
is decreasing, the
light emitted by the LED is also decreasing until such time that it will turn off completely.
In Figure 2, just like in the output of Figure 1, the collector current increases and V
CE
decreases
as the input voltage increases. However, the collector current and VCE in Figure 1 is greater
compared with the value of collector current in Figure 2.
The transistor is acting as a switch by turning on or turning off the LED. In the first figure, the
light of LED started from bright and eventually will turn off. On the other hand, in the second
figure, the LED is turned off from the start and increases its luminous intensity as the input
voltage increases.
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Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 39 of 4
Waveform 1 Square Wave Input
Waveform 2 Sinusoidal Waveform
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ECEM312 Electronics 1 Laboratory 40 of 4
GENERALIZATION:
Bipolar junction transistor also stands as a switch. It is like a closed switch when used in
saturated condition and it will act as open switch when it is in cut-off region. Aside from BJT
acting as a switch, it can also be used for LED drivers to operate.
FOLLOW-UP ACTIVITY: Design Problem
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 41 of 4
Activity 10
BJT BIASING and BIASING STABILITY
Name: ____________________________________
____________________________________
____________________________________ Date Performed: ____________
Section: _________ Date Submitted: ____________
Laboratory Instructor: _____________________________________
RESULTS AND ANAYSIS
Table 8 Transistor Specification
Values
Parameters Transistor 1 Transistor 2
PRODUCT Number/Code 2SC2655 MPS2222A
VCEO 50 V 40 V
HFE (min, typ., max.) 70,0,240 40
ICmax 1 A 600 mA
VCEsat 0.5 V 0.4 V
Table 2 BIAS STABILITY
Biasing
Techniques
Transistor 1:
_____2sc2655_________
Transistor 2:
______mps222a_________
IC VCE IC VCE
BASE BIAS (FIG.
1)
2.833 mA 12.17 V 6.018 mA 8.98 V
EMITTER
FEEDBACK
BIAS (FIG. 2)
2.71 mA 12.172 V 5.482 mA 9.29 V
VOLTAGE
DIVIDER BIAS
4.416 mA 10.398 V 5.08 mA 9.712 V
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ECEM312 Electronics 1 Laboratory 42 of 4
(FIG. 3)
COLLECTOR
FEEDBACK
BIAS (FIG. 4)
2.40 mA 12.60 V 4.23 mA 10.77 V
OBSERVATION AND ANALYSIS:
The value of R4 was specifically given, then if a DC voltage source is applied. The values of IB and
IC will follow and also increase. But since the value of VCE is inversely proportional to IB and IC, then the
value of VCE will then be lessen or decrease.
Generalization:
A bipolar junction transistor, (BJT) is very versatile. It can be used in many ways, as an
amplifier, a switch or an oscillator and many other uses too. Before an input signal is applied its
operating conditions need to be set. This is achieved with a suitable bias circuit, some of which I
will describe. A bias circuit allows the operating conditions of a transistor to be defined, so that
it will operate over a pre-determined range. This is normally achieved by applying a small fixed
dc voltage to the input terminals of a transistor. Bias design can take a mathematical approach
or can be simplified using transistor characteristic curves. When the desired dc current and
voltage levels of the transistors have been identified, biasing circuits are constructed that will
set up the desired values of IC and VCE. It includes (state the biasing circuits). A biasing network
has to preferably make use of one power supply to bias both the junctions of the transistor.
The experiment was conducted to prove further and visually show this theory.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 43 of 4
Follow-Up Activity:
Circuit design:
Table 3 Computed and Measured value
Parameters IC VCE VE
Computed 5mA 7V 1V
Measured 5.24mA 6.618V 1.044V
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 44 of 4
Activity 11
Bipolar Junction Transistor as AC Pre- Amplifiers
Name: ____________________________________
____________________________________
____________________________________ Date Performed: ____________
Section: _________ Date Submitted: ____________
Laboratory Instructor: _____________________________________
RESULTS AND ANALYSIS
Table 9 Design Values
Transistor VCC HFE R1 R2 RC Re
2SC2655 15V 70 10k 1.5k 1.5k 200
Table 2 DC values
VCE VC VE VB IC
Computed
Values
7V 8V 1V 1.7V 5mA
Measured
Values
6.618V 7.662V 1.044V 1.721V 5.24mA
OBSERVATIONS AND ANALYSIS:
The data gathered shows that they have the same input signal but they differ on their
output signals. This due to the change in source and the alternation in the output terminals.
The first output comes from the collector while the other comes from the emitter.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 45 of 4
Waveform 1 Output A
Waveform 3 Output B
OBSERVATIONS AND ANALYSIS:
As shown in the waveforms of the graph we can see that the gains are not the same.
The gain in output A is higher than the gain in output B. we can conclude that Output A is an
amplifier. The input waveform is the same for both outputs, but the output waves are different
because different errors and terminal where the data was gathered.
College of Engineering
Ateneo de Naga University
ECEM312 Electronics 1 Laboratory 46 of 4
Table 3 Amplifier Gain
VI
OUTPUT A OUTPUT B
VO AV = (VO/VI) VO AV = (VO/VI)
OBSERVATIONS AND ANALYSIS:
As increase the input voltage, the output voltage in A will increase but on the other
hand B will decrease its value. The voltage gain in output A will increase and in B will decrease.
The waveform will change based on the changes of the input voltage in both outputs.
GENERALIZATION:
Amplification is the process of increasing the strength of an ac signal, that is, increasing
its power level. Amplifiers are circuits used to provide amplification. All amplifiers have
three fundamental properties; gain, input impedance, output impedance. The amplifier
input and output circuits combine to reduce the effective voltage gain of an amplifier from
its ideal value. The reduction in voltage gain caused by the amplifier input and output
circuits can be limited by increasing the value of Z
in
and decreasing the value of Z
out.