VND810

DOUBLE CHANNEL HIGH SIDE DRIVER

TYPE VND810 (*) Per each channel

RDS(on) 160 m (*)

IOUT 3.5 A (*)

VCC 36 V

CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS I ON STATE OPEN LOAD DETECTION I OFF STATE OPEN LOAD DETECTION I SHORTED LOAD PROTECTION I UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN I PROTECTION AGAINST LOSS OF GROUND I VERY LOW STAND-BY CURRENT
I I I

SO-16 ORDER CODES

PACKAGE TUBE VND810 T&R VND81013TR

SO-16

REVERSE BATTERY PROTECTION (**) combined with thermal shutdown and automatic restart protects the device against overload. The device detects open load condition both in on and off state. Output shorted to VCC is detected in the off state. Device automatically turns off in case of ground pin disconnection.

DESCRIPTION The VND810 is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation BLOCK DIAGRAM

Vcc

Vcc CLAMP

OVERVOLTAGE UNDERVOLTAGE

GND INPUT1 STATUS1

CLAMP 1 OUTPUT1 DRIVER 1 CLAMP 2 CURRENT LIMITER 1 LOGIC OVERTEMP. 1 OPENLOAD ON 1 CURRENT LIMITER 2 DRIVER 2 OUTPUT2

INPUT2 OPENLOAD OFF 1 STATUS2 OPENLOAD OFF 2 OVERTEMP. 2 OPENLOAD ON 2

(**) See application schematic at page 8

July 2002

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VND810
ABSOLUTE MAXIMUM RATING
Symbol VCC - VCC - IGND IOUT - IOUT IIN Istat Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT VESD - STATUS - OUTPUT - VCC Maximum Switching Energy (L=1.5mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=5A) Power Dissipation TC=25C Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 4000 4000 5000 5000 26 8.3 Internally Limited - 40 to 150 - 55 to 150 Unit V V mA A A mA mA V V V V mJ W C C C

EMAX Ptot Tj Tc Tstg

CONNECTION DIAGRAM (TOP VIEW)

VCC N.C. GND INPUT 1 STATUS 1 STATUS 2 INPUT 2 VCC

16

VCC VCC OUTPUT 1 OUTPUT 1 OUTPUT 2 OUTPUT 2

VCC VCC

CURRENT AND VOLTAGE CONVENTIONS

IS IIN1 INPUT 1 VIN1 VSTAT1 ISTAT1 STATUS 1 IIN2 INPUT 2 VIN2 ISTAT2 STATUS 2 VSTAT2 GND OUTPUT 2 VOUT2 IGND OUTPUT 1 IOUT2 VOUT1 IOUT1 VCC

VCC

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VND810
THERMAL DATA
Symbol Rthj-lead Rthj-amb Parameter Thermal Resistance Junction-lead Thermal Resistance Junction-ambient Value 15 75 (*) Unit C/W C/W

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35m thick) connected to all VCC pins. Horizontal mounting and no artificial air flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40C < Tj <150C, unless otherwise specified) (Per each channel) POWER OUTPUTS
Symbol VCC (**) VUSD (**) VOV (**) RON Parameter Operating Supply Voltage Under Voltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 160 12 12 5 0 -75 320 40 25 7 50 0 5 3 Unit V V V m m A A mA A A A A

IOUT=1A; Tj=25C IOUT=1A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; VIN=VOUT=0V; Tj=25C On State; VCC=13V; VIN=5V; IOUT=0A VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C

IS (**)

Supply Current

IL(off1) IL(off2) IL(off3) IL(off4)

(**) Per device

Off State Output Current Off State Output Current Off State Output Current Off State Output Current

SWITCHING (VCC=13V)
Symbol td(on) td(off) Parameter Turn-on Delay Time Turn-off Delay Time Test Conditions RL=13 from VIN rising edge to VOUT=1.3V RL=13 from VIN falling edge to VOUT=11.7V RL=13 from VOUT=1.3V to VOUT=10.4V RL=13 from VOUT=11.7V to VOUT=1.3V Min Typ 30 30 See relative diagram See relative diagram Max Unit s s V/s

dVOUT/dt(on) Turn-on Voltage Slope

dVOUT/dt(off) Turn-off Voltage Slope

V/s

LOGIC INPUT
Symbol VIL IIL VIH IIH VI(hyst) VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V VIN = 3.25V IIN = 1mA IIN = -1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V A V A V V V

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VND810
ELECTRICAL CHARACTERISTICS (continued) STATUS PIN
Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V A pF V V

PROTECTIONS
Symbol TTSD TR Thyst tSDL Ilim Vdemag Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 3.5 5.5V<VCC<36V IOUT=1A; L=6mH 5 7.5 7.5 VCC-41 VCC-48 VCC-55 Max 200 Unit C C C s A A V

Tj>TTSD

OPENLOAD DETECTION
Symbol IOL tDOL(on) VOL tDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V IOUT=0A VIN=0V 1.5 2.5 Min 20 Typ 40 Max 80 200 3.5 1000 Unit mA s V s

OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn VINn

OVERTEMP STATUS TIMING Tj > TTSD

VSTAT n

VSTAT n tSDL tDOL(off) tDOL(on) tSDL

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VND810

Switching time Waveforms

VOUTn 90% 80%

dVOUT/dt(on)

dVOUT/dt(off)

10% t VINn

td(on)

td(off)

TRUTH TABLE
CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L

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VND810
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I -25 V +25 V -25 V +25 V -4 V +26.5 V II -50 V +50 V -50 V +50 V -5 V +46.5 V TEST LEVELS III -75 V +75 V -100 V +75 V -6 V +66.5 V TEST LEVELS RESULTS II III C C C C C C C C C C E E IV -100 V +100 V -150 V +100 V -7 V +86.5 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01 400 ms, 2

I C C C C C C

IV C C C C C E

CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device.

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VND810
Figure 1: Waveforms

NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC INPUTn OUTPUT VOLTAGEn STATUSn undefined
VUSD VUSDhyst

OVERVOLTAGE
VCC<VOV VCC>V OV

VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn
VOUT>VOL

VOL

OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn
TTSD TR

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VND810
APPLICATION SCHEMATIC

+5V +5V +5V VCC Rprot STATUS1 Dld C Rprot INPUT1 OUTPUT1 Rprot STATUS2

Rprot

INPUT2

GND

OUTPUT2

RGND VGND

DGND

GND PROTECTION REVERSE BATTERY

NETWORK

AGAINST

Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / IS(on)max. 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary

depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.

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VND810
C I/Os PROTECTION:
If a ground protection network is used and negative transients are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax

Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.

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VND810
OPEN LOAD DETECTION IN OFF STATE
Off state open load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1) no false open load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT=(VPU/(RL+RPU))RL<VOlmin. 2) no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU<(VPUVOLmax)/ IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pull-up resistor RPU should be connected to a supply that is switched OFF when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the Electrical Characteristics section.

Open Load detection in off state

V batt.

VPU

VCC RPU INPUT DRIVER + LOGIC OUT + R STATUS VOL RL IL(off2)

GROUND

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VND810
Off State Output Current
IL(off1) (uA)
1.6 1.44 1.28 1.12 0.96 0.8 0.64 0.48 0.32 0.16 0 -50 -25 0 25 50 75 100 125 150 175

High Level Input Current

Iih (uA)
5

Off state Vcc=36V Vin=Vout=0V

4.5

Vin=3.25V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Clamp Voltage

Vicl (V)
8 7.8

Status Leakage Current

Ilstat (uA)
0.05

Iin=1mA
7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 0.01 0.02 0.03 0.04

Vstat=5V

Tc (C)

Tc (C)

Status Low Output Voltage

Vstat (V)
0.8 0.7

Status Clamp Voltage

Vscl (V)
8 7.8

Istat=1.6mA
0.6

Istat=1mA
7.6 7.4

0.5 0.4 0.3 0.2

7.2 7 6.8 6.6 6.4

0.1 0 -50 -25 0 25 50 75 100 125 150 175

6.2 6 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VND810
On State Resistance Vs Tcase
Ron (mOhm)
400 350 300 250 200 150 100 100 50 0 -50 -25 0 25 50 75 100 125 150 175

On State Resistance Vs VCC

Ron (mOhm)
300 275

Iout=0.5A Iout=0.5A Vcc=8V; 13V & 36V

250 225 200 175 150 125

Tc= 150C

Tc= 25C

Tc= - 40C
75 50 5 10 15 20 25 30 35 40

Tc (C)

Vcc (V)

Openload On State Detection Threshold

Iol (mA)
60 55 50 45 40 35 30 25

Input High Level

Vih (V)
3.6 3.4

Vcc=13V Vin=5V

3.2 3 2.8 2.6 2.4

20 15 10 -50 -25 0 25 50 75 100 125 150 175 2.2 2 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Low Level

Vil (V)
2.6 2.4 2.2

Input Hysteresis Voltage

Vhyst (V)
1.5 1.4 1.3 1.2

2 1.8 1.6 1.4

1.1 1 0.9 0.8 0.7

1.2 1 -50 -25 0 25 50 75 100 125 150 175

0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VND810
Overvoltage Shutdown
Vov (V)
50 48 46 44 42 40 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175

Openload Off State Voltage Detection Threshold

Vol (V)
5 4.5

Vin=0V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Turn-on Voltage Slope

dVout/dt(on) (V/ms)
1000 900 800 700 600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 175

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
500 450

Vcc=13V Rl=13Ohm

400 350 300 250 200 150 100 50 0 -50

Vcc=13V Rl=13Ohm

-25

25

50

75

100

125

150

175

Tc (C)

Tc (C)

ILIM Vs Tcase
Ilim (A)
10 9

Vcc=13V
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

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VND810
Maximum turn off current versus load inductance

ILMAX (A) 10

A B C

1 0.1 1 L(mH )
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization

10

100

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VND810

SO-16 THERMAL DATA

SO-16 PC Board

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=1.6mm, Cu thickness=35m, Copper areas: 0.26cm2, 4cm2).

Rthj-amb Vs PCB copper area in open box free air condition

RTH j-amb (C/W)

85 80 75 70 65 60 55 50 45 40

PCB Cu heatsink area (cm ^2)

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VND810
SO-16 Thermal Impedance Junction Ambient Single Pulse

ZTH (C/W) 1000

100

0.26 cm2 4 cm2

10

0.1

0.01 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000

Thermal fitting model of a double channel HSD in SO-16

Pulse calculation formula

Z TH = R TH + Z THtp ( 1 )
where

= tp T
0.5 0.35 1.8 4.5 10 16 48 0.0001 7.00E-04 6.00E-03 0.2 0.7 2 4

Thermal Parameter
Tj_1
Pd1 C1 C2

C1

C2

C3

C4

C5

C6

R1

R2

R3

R4

R5

R6

Tj_2

R1 Pd2

R2

T_amb

Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)

25

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VND810

SO-16 MECHANICAL DATA

DIM. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8 (max.) 0.149 0.181 0.019 10 6.2 0.35 0.19 0.5 45 (typ.) 0.385 0.228 0.050 0.350 1.157 0.208 0.050 0.024 0.393 0.244 0.1 mm. MIN. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.004 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010

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VND810
SO-16 TUBE SHIPMENT (no suffix)

Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)

All dimensions are in mm.

50 1000 532 3.2 6 0.6

TAPE AND REEL SHIPMENT (suffix 13TR) REEL DIMENSIONS

Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VND810

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com

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