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Mosfet Matlab Code

This lab assignment aims to study the characteristics of drain current (Id) with varying parameters in both the triode and saturation regions of a MOSFET. The document provides the theory behind how Id varies with the gate-source voltage (Vgs), channel length (L), and drain-source voltage (Vds) in the two regions. It includes the relevant equations and MATLAB code to plot Id against Vgs, L, and Vds in order to observe these relationships and analyze the MOSFET behavior in each region of operation. The output graphs are in line with the expected variations of Id based on the equations.

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Subhabrata Das
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100% found this document useful (6 votes)
4K views

Mosfet Matlab Code

This lab assignment aims to study the characteristics of drain current (Id) with varying parameters in both the triode and saturation regions of a MOSFET. The document provides the theory behind how Id varies with the gate-source voltage (Vgs), channel length (L), and drain-source voltage (Vds) in the two regions. It includes the relevant equations and MATLAB code to plot Id against Vgs, L, and Vds in order to observe these relationships and analyze the MOSFET behavior in each region of operation. The output graphs are in line with the expected variations of Id based on the equations.

Uploaded by

Subhabrata Das
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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Lab Assignment No.

1 AIM: TO STUDY THE CHARACTERISTICS OF Id AND Vgs ABSTRACT The main aim of this experiment is to p ot the Vgs !"s Id #hara#teristi#s and o$ser!e the effe#t on the drain #%rrent &hen Vgs is !aried' F%rther the de!i#e parameters s%#h as the mo$i it( and the #hanne ength are !aried to o$ser!e the effe#t on the #hara#teristi#s' THEORY) The e*%ation %sed in this experiment is) Id+,-"./01n0Cox0,2"3/0,Vgs)Vth/. 2here Id+ drain #%rrent4 1n = mo$i it( of e e#trons4 Cox+ oxide #apa#itan#e42+ &idth of the 5OSFET4 3+ #hanne ength 4 Vgs+ gate so%r#e !o tage4 Vth+ thresho d !o tage' The a$o!e e*%ation is !a id &hen the 5OSFET is in sat%ration &here the drain #%rrent no onger depends on the drain to so%r#e !o tage $%t it rather fo o&s the s*%are a&' MATLAB CODE)
a/

2hen 1n is !aried) # #6 # ear a 6 # ose a 6 Vgs+789':9;8<6 Vt+'=6 5n-+;880,-8>,)=//6 5n.+:880,-8>,)=//6 5n;+?880,-8>,)=//6 Cox+,,;'@0A'A:=0,-8>,);///"./6 2+-8>,)@/6 3+,-8>,)?// for i+-9 ength,Vgs/ Id-,i/+,8':05n-0Cox020,,Vgs,i/)Vt/>./"3/6 Id.,i/+,8':05n.0Cox020,,Vgs,i/)Vt/>./"3/6 Id;,i/+,8':05n;0Cox020,,Vgs,i/)Vt/>./"3/6 end p ot,Vgs4Id-4BCo orB47'C 8 8</6grid6 ho d on6 p ot,Vgs4Id.4BCo orB478 'C 8</6grid6 ho d on6 p ot,Vgs4Id;4BCo orB478 8 'C</6grid6 ho d on6

x a$e ,BVgs ,V/))))))))))))))))DB/6 ( a$e ,BId ,A/))))))))))))))))DB/6 S#hemati# mat a$ o%tp%t)

$/ 3 is !aried # #6 # ear a 6 # ose a 6 Vgs+789':9;8<6 Vt+'=6 5n+:880,-8>,)=//6 Cox+,,;'@0A'A:=0,-8>,);///"./6 2+-8>,)@/6 3-+,-8>,)?//6 3.+,;0,-8>,)?///6 3;+,:0,-8>,)?///6 for i+-9 ength,Vgs/ Id-,i/+,8':05n0Cox020,,Vgs,i/)Vt/>./"3-/6 Id.,i/+,8':05n0Cox020,,Vgs,i/)Vt/>./"3./6 Id;,i/+,8':05n0Cox020,,Vgs,i/)Vt/>./"3;/6 end p ot,Vgs4Id-/6grid6 ho d on6 p ot,Vgs4Id./6grid6 ho d on6 p ot,Vgs4Id;/6grid6

ho d on6 x a$e ,BVgs ,V/))))))))))))))))DB/6 ( a$e ,BId ,A/))))))))))))))))DB/6 OUTEUT)

CONCLUSION) As o$ser!ed from the t&o o%tp%t graph that &ith #hanges in the mo$i it( as &e as the #hanne ength4 the drain #%rrent sho&s a !ariation &ith in#rease in the gate so%r#e !o tage' As the mo$i it( of #arriers in#reases4 the drain #%rrent in#reases' This is $e#a%se4 in#rease of mo$i it( signifies that there are ess #o ision and e e#trons #an mo!e thro%gh the #hanne free ( and hen#e generate more #%rrent' 2ith the de#rease in #hanne ength4 the #%rrent in#reases' Fe#a%se a shorter #hanne has more #on#entration of #arriers and more #arrier #on#entration &i generate more #%rrent'

Lab Assignment No AIM ! TO OFSERVE THE VARIATION OF TRANSCONDUCTANCE 2'R'T' THE DRAIN CURRENT AND THE OVERDRIVE VO3TAGE. ABSTRACT In this experiment &e &i determine the !ariation of the trans#ond%#tan#e of the 5OSFET &ith the drain #%rrent Id as &e as the o!erdri!e !o tage ,Vgs) Vth/' THEORY 2e a Hno& that a 5OSFET operating in sat%ration a &a(s prod%#es a #onstant #%rrent in response to the !ariation of gate so%r#e !o tage' That is it a &a(s $eha!es iHe a #%rrent so%r#e' Trans#ond%#tan#e is the meas%re of ho& &e the 5OSFET de!i#e is a$ e to #on!ert the !o tage into o%tp%t #%rrent' The go!erning e*%ations are) -/ gm+ 1n0Cox0,2"3/0,Vgs)Vth/ A"V6 &here gm is the trans#ond%#tan#e of the de!i#e4 1n is the mo$i it( of #arriers4 Cox is the oxide #apa#itan#e4 2+ &idth of the de!i#e4 3+#hanne ength4 ,Vgs)Vth/+ o!erdri!e !o tage' ./ gm+ 2 n Cox ( W / L ) Id A"V6 Id is the drain #%rrent' ;/ gm+ ,.0Id/",Vgs)Vth/ A"V' MATLAB CODE! -/ # #6 # ear a 6 # ose a 6 Vgs+7898':9-8<6 Vt+8'?6 5n+,:880-8>,)=//6 Cox+,;'@0A'A:=0-8>,);/"./6 2+-8>)@6 3+-8>)?6 for i+-9 ength,Vgs/ gm,i/+,,5n0Cox020,Vgs,i/)Vt//"3/6 end for i+-9 ength,Vgs/ t,i/+Vgs,i/)Vt6 end p ot,t4gm/6grid6 tit e,BGraph of ,Vgs)Vt/ !"s gmB/6

x a$e ,BVgs)Vt))))DB/6 ( a$e ,Bgm)))))DB/6 OUTEUT!

./ # #6 # ear a 6 # ose a 6 Ids+7898':9:<6 5n+,:880-8>,)=//6 Cox+,;'@0A'A:=0-8>,);/"./6 2+-8>)@6 3+-8>)?6 for i+-9 ength,Ids/ gm,i/+,.05n0Cox020Ids,i/"3/>8':6 end p ot,Ids4gm/6grid6 tit e,BGraph of Id !"s gmB/6 x a$e ,BIds))))))DB/6 ( a$e ,Bgm))))))DB/6

OUTEUT)

;/ # #6 # ear a 6 # ose a 6 Vgs+78'A98':9:<6 Vt+8'?6 Ids+8':6 for i+-9 ength,Vgs/ gm,i/+,,.0Ids/",Vgs,i/)Vt//6 end for i+-9 ength,Vgs/ t,i/+Vgs,i/)Vt6 end p ot,t4gm/6grid6 tit e,BGraph of ,Vgs)Vt/ !"s gmB/6 x a$e ,BVgs)Vt))))DB/6 ( a$e ,Bgm)))))DB/6

OUTEUT)

CONC3USION) The three o%tp%t #%r!es sho&s the !ariation of the trans#ond%#tan#e &ith the o!erdri!e !o tages and drain #%rrent $ased on the e*%ation mentioned a$o!e' The first e*%ation depi#ts a inear re ationship $et&een trans#ond%#tan#e and o!erdri!e &hereas in the third re ationship gm is in!erse ( proportiona to o!erdri!e !o tage' In the se#ond re ationship4 the trans#ond%#tan#e is proportiona to the s*%are rrot of drain #%rrent'

Lab Assignment No " AIM ! TO STUDY THE VARIATION OF THE CHARGE IN THE DEE3ETED REGION 2ITH VO3TAGE AT ANY EOINT x A3ONG THE CHANNE3' ABSTRACT! The aim of this experiment is to o$ser!e ho& the #harge densit( a ong a ong the !aries &ith the !o tage at an( point x a ong the #hanne and !i#e !ersa' THEORY The e*%ations %sed in this experiment are gi!en $e o&) Id,x/+2Cox,Vgs)V,x/)Vth/ C6 2here Id,x/ is the #harge densit( at an( point x a ong the #hanne 4 V,x/ is the !o tage at an( point x' To o$ser!e the re!erse #ase4 i'e'4 the !ariation of Vx &'r't' to Id the fo o&ing e*%ation is %sed) Vx+,Vgs)Vth/),Id"2Cox/ V' MATLAB CODE) # #6 # ear a 6 # ose a 6 Id+789-8>)@9:0-8>)@<6 Vgs+.6 Vt+8'?6 2+-8>,)C/6 Cox+,;'@0A'A:=0-8>,)-.//",.0-8>,)@//6 for i+-9 ength,Id/ Vx,i/+,,Vgs)Vt/),Id,i/",20Cox///6 end s%$p ot,.4-4-/6 p ot,Id4Vx/6grid6 x a$e ,BId ,C/)))))))DB/6 ( a$e ,BV,x/,V/)))))))))DB/6 s%$p ot,.4-4./6 p ot,Vx4Id/6 grid on6 x a$e ,BVx))))))DB/6 ( a$e ,BId))))))DB/6

OUTEUT)

CONCLUSION As e!ident from the o%tp%t #%r!e a$o!e4 $oth the #%r!e sho&s negati!e s ope' This sho&s that $oth the terms are in!erse ( re ated' An in#rease in one term &i #a%se a de#rease in other term and !i#e !ersa'

Lab Assignment no. # AIM9 To st%d( the #hara#teristi#s of Id &ith !ar(ing parameters4 #onsidering $oth Triode and Sat%ration region' AFSTRACT9 In this experiment the graph of Id is p otted &ith !ar(ing the parameters iHe) ength ,3/4 Vgs in the Sat%ration region as &e in Triode region' THEORY9 a/ Triode region9 2hen the Gate !o tage is in the range 8JVgsJVt4 the gated region $et&een the so%r#e and drain is dep eted' No #arrier f o& #an $e o$ser!ed in the #hanne ' As the gate !o tage is in#reased $e(ond the thresho d !o tage ,Vgs D Vt/4 an in!ersion a(er is formed' Th%s4 in inear region operation4 the #hanne region a#ts as a !o tage)#ontro ed resistor' The o%tp%t #%rrent Id for the triode region id gi!en $(9 Id+ ,8':0Un0Cox02/"307.0,Vgs)Vt/0Vds)Vds.< $/ Sat%ration region9 For Vds + Vdsat4 the in!ersion #harge at the drain is red%#ed to Kero4 &hi#h is #a ed the pin#h)off point' Fe(ond the pin#h)off point4 a dep eted s%rfa#e region forms adLa#ent to the drain4 and this dep etion region gro&s to&ard the so%r#e &ith in#reasing drain !o tages' This operation mode of the 5OSFET is #a ed the sat%ration mode or the sat%ration region' In the sat%ration region the #%rrent e*%ation for Id is gi!en $(9 Id+ ,8':0Un0Cox02/"30,Vgs)Vt/. 5AT3AF CODE9 #/ Triode region9 # #6 # ear a 6 %+:880-8>,)=/6

Eox+;'@0A'A:0-8>)-.6 Cox+Eox",-0-8>,)@//6 Vg+;9-9:6 Vt+8'?6 Vd+898'8:9-86 2+-8>,)@/6 3+.80-8>,)@/6 Vg-+898':9-86 for L+-9 ength,Vg/ for i+-9 ength,Vd/ if Vd,i/J,Vg,L/)Vt/ Id,i/+%0Cox0,2"3/0,,Vg,L/)Vt/0Vd,i/)8':0Vd,i/>./6 H+Id,i/6 e se Id,i/+H6 end end s%$p ot,.4-4-/ p ot,Vd4Id/6grid6 ho d on6 Id-,L/+%0Cox0,2"3/0,,Vg,L/)Vt/0-)8':0,-/>./6 Id.,L/+%0Cox0,2"3/0,,Vg,L/)Vt/08':)8':0,8':/>./6 R,L/+,-)8':/",Id-,L/)Id.,L// end for i+-9 ength,Vg-/ Id;,i/+%0Cox0,2"3/0,Vg-,i/)Vt/>.6 end s%$p ot,.4-4./ p ot,Vg-4Id;/6 OUTEUT9

d/ Sat%ration Region9 # #6 # ear a 6 # ose a 6 U+:880-8>,)=/6 Eox+;'@0A'A:0-8>)-.6 Cox+Eox",.0-8>)@/6 Vg+898':9-86 2+-8>,)@/6 Vt+3+.89.89-886 for L+-9 ength,3/ for i+-9 ength,Vg/ Id,i/+8':0U0Cox02",3,L/0-8>,)@//0,,Vg,i/)Vt/>./6 end (-+ og,8':0U0Cox02",3,L/0-8>,)@//0,,.)Vt/>.//6 (.+ og,8':0U0Cox02",3,L/0-8>,)@//0,,;)Vt/>.//6 m,L/+-",(.)(-/ p ot,Vg4 og,Id//6grid on6 ho d on6 end OUTEUT9

CONC3USION9 The expe#ted o%t#ome has $een a##omp ished %sing 5AT3AF' The re*%ired graph has $een generated $( the 5AT3AF #ode' The graph for $oth the triode region and the sat%ration region has $een p otted and o$tained as expe#ted'

Lab Assignment No $ AIM9 To imp ement the CS #onfig%ration Abst%a&t: In this experiment &e ha!e st%d( the $eha!ior of trans#ond%#tan#e4 o%tp%t impedan#e4 intrinsi# gain and o%tp%t !o tage &ith respe#t to the inp%t !o tage and p otted the graph #orresponding (' Theor(9 2e Hno& that the e*%ation of drain #%rrent is ) Id+8':0Un0Cox0230,Vin)Vt/>. E*%ation of o%tp%t !o tage is gi!en as) Vo+Vdd)Rd0IdE*%ation of trans#ond%#tan#e is) gm+

( 2 Un Cox ( W / L ) Id )

E*%ation of o%tp%t impedan#e is) ro+-",Un0Cox0230,Vin)Vt// 5AT3AF CODE9 #/ To dra& the graph of gm4Id and Vo%t &ith respe#t to Vin Rd+-8886 5nCox+:80-8>)C6 23+-86 for i+-9 ength,Vin/ if Vin,i/J+Vt Vo,i/+Vdd6 e seif ,,Vin,i/DVt/ MM ,Vin,i/J=// Id-,i/+8':05nCox0230,Vin,i/)Vt/>.6 Vo,i/+Vdd)Rd0Id-,i/6 gm,i/+,,.05nCox0230Id-,i//>8':/6

e seif ,Vin,i/D+=/ N Id.,L/+8':0%0Cox0,,.0Vin,i/)Vt/0Vo,i)-/)Vo,i)-/>./6 NVo,i/+Vdd)Rd0Id.,L/6 N L+LO-6 Ron,i/+-",5nCox0230,Vin,i/)Vt//6 Vo,i/+,Vdd0Ron,i//",Ron,i/ORd/6 Id-,i/+Vdd",RdORon,i//6 gm,i/+,5nCox0230Vo,i)-//6 end end s%$p ot,;4-4-/ p ot,Vin4Vo/6 grid on6 x a$e ,BVin)))))DB/6 ( a$e ,BVo%t))))DB/6 s%$p ot,;4-4./ p ot,Vin4Id-/6 grid on6 x a$e ,BVin))))DB/6 ( a$e ,BId)))))DB/6 s%$p ot,;4-4;/ p ot,Vin4gm/6 grid on6 x a$e ,BVin))))DB/6 ( a$e ,Bgm))))))DB/6 d/ To o$tain the graph $et&een ro !s 3 and Id !s Vds # #6 # ear a 6

# ose a 6 Vds+7898'8:9.':<6 Vt+8'?6 Vgs+;6 5n+-8880-8>,)=/6 Eox+;'@0A'A:=0-8>,)-./6 tox+-8>,)@/6 Cox+Eox"tox6 3+7.0-8>,)A/9.0-8>,)A/9-80-8>,)A/<6 2+-8>)C6 s%$p ot,.4-4-/6 for L+-9 ength,3/ for i+-9 ength,Vds/ Id,i/+,5n0Cox020,,,Vgs)Vt/0Vds,i//),Vds,i/>,./".//"3,L//6 end p ot,Vds4Id/6 grid6 ho d on6 end for m+-9 ength,3/ Vds+.'; Id-,m/+,5n0Cox020,,,Vgs)Vt/0Vds/),Vds>,./".//"3,m//6 Vds+.'.@ Id.,m/+,5n0Cox020,,,Vgs)Vt/0Vds/),Vds>,./".//"3,m//6 end for H+-9 ength,3/ R,H/+8'8-",Id-,H/)Id.,H//6 end s%$p ot,.4-4./6 p ot,34R/6 grid6 ho d on6

Sim% ation and Res% t9 ,a/

,$/

Lab Assignment No. ' AIM: TO STUDY THE CHARACTERISTICS OF SHORT CHENNE3 EFFECT OF 5OS TRANSISTOR' ABSTRACT! The aim of this experiment is to p ot the #hara#teristi#s of Vgs !"s Id and see o$ser!e the effe#t of the short #hanne &hen Vgs is !aried' THEORY) The e*%ation %sed in this experiment is) Id+ ,2"3/01n0Cd0Vt. 0 e ,
Vgs Vt nVt
/

0,-) e), Vt

Vds

2here Vt+ Vt o ( )(*+s , - . s + Vsb ) Qs / 2here Id+ drain #%rrent4 1n = mobi/it0 of e e#trons4 Cox+ oxide #apa#itan#e4 2+ &idth of the 5OSFET4 3+ #hanne ength4 Vgs+ gate so%r#e !o tage4 Vth+ thresho d !o tage4 Cd+ dep etion P+#hain ind%#ed $arrier o&ering4 Q+$od( effe#t fa#tor' MATLAB CODE) # #6 # ear a 6 # ose a 6 VT+'8.:A:6 Vto+'?6 Esi+;'@0A'A:=0-8>)-.6 *+-'C0-8>)-@6 Ns%$+-8>-:6 #d+s*rt,*0Esi0Ns%$",=0'C://6 Y+';:6 &+-8>)C6 +-8>)A6 n+'8A6 %+'8:6 Is+'.6 #ox+Esi",.0-8>)./6 N+-O,#d"#ox/6 !ds+:6 !s$+789':9.< !gs+789'-9:< for i+-9 ength,!s$/ for L+-9 ength,!gs/

!t+,Vto0n0!ds/ O Y0,s*rt,!s$,i/OIs/Os*rt,Is//6 Id,L/+,&" /0%0#d0,VT/>.0,exp,,!gs,L/)!t/",N0VT///0,-)exp,,!ds/"VT//6 end s%$p ot,.4-4-/ p ot,!gs4Id/6grid ho d on6 s%$p ot,.4-4./ p ot,!gs4 og,Id//6grid ho d on6 end ( a$e ,BId)))))))D for short #hanne s%$thresho d #ond%#tionB/6 x a$e ,BVgs)))))))Dfor gate to so%r#e !o tageB/6 SI5U3ATED OUTEUT9

CONC3USION9 Hen#e &e ha!e sho&n the #hara#teristi#s of short #hanne effe#t in the mos transistor &hen !aries the gate to so%r#e !o tage then the drain #%rrent is in#reases inir ('

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