MMBT3646

MMBT3646

Switching Transistor
3

SOT-23
1
1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 15 V
VCES Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5
IC Collector Current (DC) - Continuous 300 mA
PD Total Device Dissipation @ TA=25°C 625 mW
- Derate above 25°C 5 mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Min. Typ. Max. Units
Off Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage (IC = 100µAdc, VBE = 0) 40 V
VCEO(SUS) Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0) 15 V
V(BR)CBO Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0) 40 V
V(BR)EBO Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0) 5 V
ICES Collector Cut-off Current (VCE = 20Vdc, VBE = 0) 0.5 µA
(VCE = 20Vdc, VBE = 0, TA = 65°C) 3
On Characteristics (1)
hFE DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc) 30 120
(IC = 100mAdc, VCE = 0.5Vdc) 25
(IC = 300mAdc, VCE = 1Vdc) 15
VCE(sat) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) 0.2 V
(IC = 100mAdc, IB = 10mAdc) 0.28
(IC = 300mAdc, IB = 30mAdc) 0.5
(IC = 30mA, IB = 3mA, TA =65°C) 0.3
VBE(sat) Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc) 0.73 0.95 V
(IC = 100mAdc, IB = 10mAdc) 1.2
(IC = 300mAdc, IB = 30mAdc) 1.7

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002

 MMBT3646
Electrical Characteristics TC=25°C unless otherwise noted) (Continued)
Symbol Parameter Min. Typ. Max. Units
Small-Signal Characteristics
Cobo Output Capacitance 5 pF
(VCE = 5Vdc, IE = 0, f = 1MHz)
Cibo Input Capacitance 8 pF
(VEB = 0.5Vdc, IC = 0, f = 1MHz)
Switching Characteristics
ton Turn-On Time VCC = 10Vdc, IC = 300mAdc, 18 ns
td Delay Time IB1 = 30mAdc, VCE(off) = 3V 10 ns
tr Rise Time 15 ns
toff Turn-Off Time VCC = 10Vdc, IC = 300mAdc, 28 ns
tf Fall Time IB1 = IB2 = 30mAdc 15 ns
ts Storge Time 20 ns

Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units
RθJA Thermal Resistance, Junction to Ambient 200 °C
RθJC Thermal Resistance, Junction to Case 83.3 °C

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002

 MMBT3646
Package Dimensions

SOT-23

0.20 MIN
0.45~0.60
0.40 ±0.03

±0.10

±0.10
1.30

2.40
0.03~0.10

0.38 REF

0.40 ±0.03 +0.05

0.12 –0.023

0.96~1.14
2.90 ±0.10
0.97REF

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

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ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
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Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
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As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
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or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1