2SK2876-01MR

N-channel MOS-FET
FAP-IIS Series 500V 1,5 6A 30W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
500 V
Continous Drain Current I
D
6 A
Pulsed Drain Current I
D(puls)
24 A
Gate-Source-Voltage V
GS
35 V
Repetitive or Non-Repetitive (T
ch
150C) I
AR
6 A
Avalanche Energy E
AS
196.9 mJ
Max. Power Dissipation P
D
30 W
Operating and Storage Temperature Range T
ch
150 C
T
stg
-55 ~ +150 C
L=10.0mH,Vcc=50V
- Electrical Characteristics (T
C
=25C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV
DSS
I
D
=1mA V
GS
=0V 500 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
3,5 4,0 4,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=500V T
ch
=25C 10 500 A
V
GS
=0V T
ch
=125C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=35V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=3A V
GS
=10V 1,25 1,5
Forward Transconductance g
fs
I
D
=3A V
DS
=25V 2 4 S
Input Capacitance C
iss
V
DS
=25V 540 810 pF
Output Capacitance C
oss
V
GS
=0V 100 150 pF
Reverse Transfer Capacitance C
rss
f=1MHz 45 70 pF
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=300V 13 20 ns
t
r
I
D
=6A 40 60 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 30 45 ns
t
f
R
GS
=10 25 40 ns
Avalanche Capability I
AV
L = 10,0mH T
ch
=25C 6 A
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25C 1,0 1,5 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 450 ns
Reverse Recovery Charge Q
rr
-dI
F
/dt=100A/s T
ch
=25C 3,2 C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-c)
channel to case 4,17 C/W
R
th(ch-a)
channel to air 62,5 C/W
N-channel MOS-FET 2SK2876-01MR
500V 1,5 6A 30W FAP-IIS Series
> Characteristics
Typical Output Characteristics Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics

ID=f(VDS); 80s pulse test; TC=25C

RDS(on) = f(Tch): ID=3A; VGS=10V

ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C

]
2
I
D

[
A
]
3
V
DS
[V] T
ch
[C] V
GS
[V]
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch

RDS(on)=f(ID); 80s pulse test;TC=25C

gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C

VGS(th)=f(Tch); ID=1mA; VDS=VGS

]
4
g
f
s

[
S
]
5
V
G
S
(
t
h
)

[
V
]
6
I
D
[A] I
D
[A] T
ch
[C]
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode

C=f(VDS); VGS=0V; f=1MHz

VGS=f(Qg): ID=6A; Tc=25C

Z
t
h
(
c
h
-
c
)

[
K
/
W
]
Transient Thermal impedance
10 12
Zthch=f(t) parameter:D=t/T
E
a
s

[
m
J
]
I
D

[
A
]
Starting Tch [C] V
DS
[V] t [s]
This specification is subject to change without notice!
N-channel MOS-FET 2SK2876-01MR
500V 1,5 6A 30W FAP-IIS Series
> Characteristics

This specification is subject to change without notice!