Sill HSpice Tutorial Final
Sill HSpice Tutorial Final
[email protected] http://www.cpdee.ufmg.br/~frank/
Information
Most of the following graphs and information base on the HSpice manual from Synopsys ( (www.synopsys.com) )
Simulation Program with Integrated Circuit Emphasis General purpose analog circuit simulator Used in IC and board-level design for check of integrity of circuit designs and prediction of circuit behavior Developed at Electronics Research Laboratory of the University of California, Berkeley SPICE simulation is industry-standard for verification of circuit operation at transistor level before manufacturing Description of circuit elements (transistors, resistors, capacitors, etc.) and connections by netlists Netlists translated into nonlinear differential algebraic equations Solving by implicit integration methods, Newton's method and sparse p matrix techniques q
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HSpice features
Superior convergence A Accurate t modeling, d li i l di many f including foundry d models d l Hierarchical node naming and reference Circuit optimization for models and cells, cells with incremental or simultaneous Multiparameter optimizations in AC, DC, and transient simulations Monte Carlo and worst-case design support Input, output, and behavioral algebraics for cells with parameters Cell characterization tools to characterize standard cell libraries Geometric lossy-coupled transmission lines for PCB, multi-chip, p, package, p g , and IC technologies g
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Process variation Monte Carlo or worst-case model parameter t variation i ti Element variation Monte Carlo or element parameter sweeps Voltage variation VCC, VDD, or substrate supply variation Temperature variation design temperature sensitivity. Timing analysis basic timing timing, jitter jitter, and signal integrity analysis Parameter optimization balancing complex constraints constraints, such as speed versus power, or frequency versus slew rate versus offset (analog circuits)
Source: Synopsys, 2007 Sill, HSpice 5
Modeling Technologies
Input file
Contains:
Design
netlist (subcircuits, macros, power supplies, and so on). Statement naming the library to use (optional). Specifies the type of analysis to run (optional). Specifies the type of output desired (optional).
Input format
No differences between upper and lower case (except in quoted filenames) Continuation of statement on next line by plus (+) sign as first nonnumeric, non-blank character in the next line Indication of to the power of by two asterisks (**)
First Character
First character in every line specifies how HSPICE i t interprets t the th remaining i i li line First line of a netlist:
Any character A h t Title or comment line
Numbers
Numbers can be
Integer Floating point Floating point with integer exponent Integer or floating point with one scale factor
Prefix
Scale Factor
Multiplying Factor
Tera Giga Mega Kilo Milli Micro Nano Pico Femto Atto
T G MEG or X K M U N P F A
1e+12 1e+9 1e+6 1e+3 1e-3 1e-6 1e-9 1e-12 1e-15 1e-18
Source: Synopsys, 2007
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Title of Simulation
Sample inverter circuit
First line is title of simulation statements are ignored Included files: same rule
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Comments
* **** Parameters *****
Comments:
First letter of line is asterisk ( (*) ) whole line is comment Dollar sign ($) anywhere on the line text after is comment
For example:
* <comment_on_a_line_by_itself> -or <HSPICE_statement HSPICE statement> $ <comment_following_HSPICE_input comment following HSPICE input>
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Definition of netlist parameters Parameter can be defined with expressions Definition can occur after use in elements Parameter names must begin with alphabetic character At redefinition last parameters definition is used Expressions cannot exceed 1024 characters
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Source element statements to specify y DC, AC, transient, and mixed voltage and current sources Grounding of voltage sources not necessary Hspice assumes: positive current flows from positive node, through the source, to negative node Independent and dependent voltage/current sources
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Voltage source element name, must begin with V Current source element name, must begin with I Positive and negative node DC source keyword and value (in volts) Transient source function
One or more of: AM, DC, EXP, PAT, PE, PL, PU, PULSE, PWL, SFFM, SIN Specification S ifi i of f characteristics h i i of f a time-varying i i source
AC source keyword for use in AC small-signal analysis Magnitude (RMS) of the AC source (in volts) Phase of the AC source (in degrees) Multiplier:
Multiplies all values with val For simulation of parallel current sources
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VX 1 0 5V
Voltage source VX has 5-volt DC bias P iti t Positive terminal i l connects t t to node d 1 Negative terminal is grounded
VH 3 6 DC=2 AC=1,90
Voltage so source rce VH has 2 2-volt olt DC bias bias, 1 1-volt olt RMS AC bias bias, with ith 90 degree phase offset Positive terminal connects to node 3 Negative terminal connects to node 6 6.
Current source IG Piecewise-linear Piecewise linear relationship, relationship which is 1 mA at time=0 time 0, and 5 mA at 25 ms Positive terminal connects to node 8 Negative terminal connects to node 7 Voltage source VMEAS has 0-volt DC bias Positive terminal connects to node 12 Negative g terminal connects to node 9
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VMEAS 12 9
Source Functions
For transient analysis Types: Trapezoidal pulse (PULSE) Sinusoidal (SIN) Exponential (EXP) Piecewise linear (PWL) Single-frequency frequency-modeled (SFFM) Single-frequency amplitude-modeled (AM) Pattern (PAT) Pseudo Random-Bit Generator Source (PRBS)
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Trapezoidal Pulse
PULSE: Keyword v1: Initial value of the voltage or current v2: Pulse plateau value td: Delay to the first ramp tr: Duration of the rising ramp tf: Duration of the falling ramp pw: Pulse width per: Pulse repetition period
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Sinusoidal Pulse
SIN: Keyword vo: Voltage or current offset va: Voltage or current peak value freq: Source frequency td: Delay y to the first sinus q: Damping factor (in Hz) j: Phase delay (in degrees)
Circuit topology
* ***** Actual circuit topology ***** M1 VOUT VIN VDD VDD pch hW Wp L M M=1 1 M2 VOUT VIN GND GND nch Wn L M=1
Netlist of applied elements Connection of elements by nodes Element statements specify: Type of device Nodes to which the device is connected Operating electrical characteristics of the device Passive elements ( (resistors, , capacitors, p , inductors, , ) ) need no model type Active elements (transistors, diodes, ) need model type El Element t multiplier lti li M replicates li t all ll values l ( (not t negative, ti zero) )
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Element Names
Names begin with the element key letter (exception: subcircuits) b i it ) Maximum name length: 1024 characters S Some element l tk key l letters: tt
C: Capacitor D: Diode J: JFET or MESFET L: Linear inductor M: MOS transistor Q: Bipolar transistor R: Resistor T,U,W: Transmission Line X: Subcircuit call
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Elements examples
R1 n1 n2 20k M=2
Type: Resistor Name: R1 Connected nodes: n1, n2 Value: 20k * 2= 40k
Type: MOSFET Name: M1 Drain node: ADDR Gate node: SIG1 Source node: GND Substrate nodes: SBS Model: nch MOSFET dimensions: algebraic expressions (width=w1+w, length=l1+l)
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Node Names
Nodes connect elements Maximum node name length: 1024 characters Can be only numbers
Range of 0 to 1016-1 Leading zeros are ignored Characters are ignored if 1 1. character is number (e (e.g.: g : 1 == 1A)
.GLOBAL statement to make node names global across all subcircuits 0, GND, GND!, GROUND: refer to the global ground
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Example
M1 VOUT VIN VDD VDD pmos_AMS Wp L M2 VOUT VIN GND GND nmos nmos_AMS AMS Wn L
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Subcircuits
Subciruits for commonly-used circuit Definition with .SUBCKT SUBCKT and .ENDS ENDS Use X<subcircuit_name> to call a subcircuit <subcircuit_name>: element name of the subcircuit Up to 15 characters .INCLUDE statement includes other netlist as subcircuit into current netlist ( (e.g.: g .INLCUDE <path>/nand.sp p p) Subcircuit example: .SUBCKT Inv A Y Wid=0 mp1 Y A VDD VDD pch L=1u W=Wid*2 W= Wid 2 mn1 Y A 0 0 nch L=1u W=Wid .ENDS Xinv1 in out Inv Wid=1u
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Access of nodes in subcircuits over (.) extension C Concatenation t ti of f circuit i it path th name with ith th the node d name
Path name of the sig25 node in X4 subcircuit is: X1.X4.sig25 E.g. can be used to print: .PRINT v(X1.X4.sig25)
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Analysis
* ***** Analysis statement ***** .TRAN TRAN 1n 1 300n 300 Definition of analysis type (DC, transient, AC, ) At begin of analysis: Determination of DC operating point values for all nodes and sources: 1. Calculation of all values 2. Setting values specified in .NODESET and .IC statements 3. Setting of values stored in an initial conditions file Then: Iteratively searching of exact solution At transient analysis: resulting DC operating point is initial estimate to solve the next timepoint Initial estimates close to exact solution increase likelihood of convergent solution and lower simulation time
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Transient Analysis
Transient analysis simulates circuit in a specific time Simple syntax: .TRAN <Tstep> <Tstop> <Tstep>: time step <Tstop>: End time (duration) of simulation Also more complex commands possible E.g.: .TRAN 200P 20N SWEEP TEMP -55 75 10 Time step: 200 ps, Duration: 20 ns Multipoint simulation: temperature is swept from -55 to 70C by 10C steps
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AC Simulations
Output can be e.g. .PRINT (into file), .MEASURE (measurement of values), .Option: options for control of accuracy, simulation speed, d analysis, l i output t tf for waveform f analysis l i (POST)
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Some Options
.OPTION LIST Prints P i t list li t of f netlist tli t elements, l t node d connections, ti values l f for components, voltage and current sources, parameters, .OPTION POST Saves simulation results for viewing by an interactive waveform viewer .OPTION OPTION INGOLD Output in exponential form or engineering notation .OPTION INGOLD=[0|1|2] INGOLD [0|1|2] INGOLD=0: (default) Engineering Format INGOLD=1: G Format (fixed and exponential) INGOLD=2: E Format (exponential SPICE)
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.PRINT Statement
.print <ana_type> ov1 [ov2 ... ovN] Output O t t from f the th .PRINT PRINT statement t t t saved di in * *.print i t fil file
Header line: column labels. First column: time Remaining columns: output variables specified with .PRINT Rows after header line: data values for simulated time points
<ana_typ>: <ana typ>: type of analysis (tran (tran, dc dc, ac ac, ..) ) oVx can be:
V(n): ( ) voltage g at node n. V(n1<,n2>): voltage between the n1 and n2 nodes. Vn(d1): voltage at nth terminal of the d1 device. In(d1): current into nth terminal of the d1 device. expression: expression, involving the plot variables above
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.MEASURE Statement
.MEASURE statement produces a measurement parameter .MEASURE MEASURE <ana_type> < t > <param_name> < > <meas_mode> < d > <param_name>: Parameter name <Meas Meas_mode mode> Measurement mode, e.g.: Rise, fall, and delay Find-when Average, RMS, min, max, and peak-to-peak Integral evaluation Derivative evaluation E.g.: .MEASURE tran vin AVG V(nt1) from=0 to=1n Parameter name: vin Measurement type: Average Value: Voltage of net n1
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Output Files
# is 0 0-9999 9999 Start and end times for each CPU phase Options Status of preprocessing checks for licensing Input syntax Models Circuit topology Convergence strategies that for difficult circuits If .MEASURE TRAN statement
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Name and version of the simulator Synopsys message block and License details Input filename Copy of the input netlist file and node count Operating point parameters Details of the volt drop drop, current current, and power for each source and subcircuit Low-resolution ASCII plots, originating from a .PLOT statement
*.ac# * # AC A Analysis l i Results R lt Fil File *.ma# AC Analysis Measurement Results File
If .MEASURE AC statement
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If .MEASURE DC statement Graphical data needed to display the FFT analysis waveforms
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Libraries
* **** Library ***** .LIB AMS.lib nominal
Libraries Lib i include i l d model d l fil files Model files contain information about behavior of applied elements (.MODEL ( MODEL statement) .MODEL statement can be also placed in netlist A li d M Applied Model d l file fil f for simulation i l ti chosen h b by option ti Syntax: .LIB <library> <option> Lib i can also Libraries l contain t i commonly-used l d commands, d subcircuit analysis, and parameters
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Two different model libraries can be chosen Additionally parameters are defined
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MOSFET Model
Definition of MOSFET by
Model Name Level Type (PMOS or NMOS) Element parameters p E.g. threshold voltage, doping, offsets CAPOP parameter Specification of model for MOSFET gate capacitances ACM (Area Calculation Method) parameter Selection of diode model type for MOSFET bulk diodes
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MOSFET LEVEL
Level 1
For simulations of large digital circuits if detailed models are not needed Low simulation time Relatively high level of accuracy for timing calculations
Level 13, 28, 39, 47, 49, 53, 54, 57, 59, 60
BSIM models Very precise (BSIM3v3, BSIM4 most precise models) Consideration of model parameter variations MOS charge conservation model for precision modeling of MOS capacitor effects
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Simulation Process
Practical issues
hspice trans.sp
sue
cscope
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COSMOSSCOPE
New Results: File > Open Plotfiles > *.trxxx Z Zoom Trace Signal Manager - select simulation - select signals Refresh signals after simulation
Calculator
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Exercises
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Exercises contd
AND
Create an AND gate with a load of 30fF Set the widths of the transistors, so that the maximum delay is 20ns
Create a 4-Bit Ripple Carry Adder Create a D-FlipFlop and a JK-FlipFlop Create a 4-Bit synchronous counter
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Exercises Help
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D-FlipFlop
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JK-FlipFlop
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2. Part
Special Tasks
Overview
Using g VerilogA g Noise-Analysis Transistor T i t Sizing Si i Optimization p Monte Carlo Analysis Temperature T t Analysis A l i Exercises
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VerilogA
Creating and using of analog behavioral descriptions Encapsulation of high high-level level behavioral and structural descriptions of systems and components Behavior of each model / module can be described mathematically in terms of its ports and parameters applied to an instance of the mod module le Modules can be defined at level of abstraction appropriate for the model and analysis, y including g architectural design, g and verification Support of top-down designs and bottom-up verification methodology Derived from IEEE Verilog Hardware Description Language (HDL) specification HSPICE: mixed design of VerilogA descriptions and transistor-level SPICE netlists Most analysis features available in HSPICE are supported for VerilogA based devices, including AC, DC, transient analysis, statistical analysis and optimization analysis,
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Instantiation of VerilogA-Modules as HSPICE subcircuits (first character for the instance name should be X) ) Modification of instance and model parameters as other HSPICE instances Mod le names should Module sho ld not conflict with ith an any HSPICE b built-in ilt in de device ice keyword Node voltages g and branch currents can be output using g conventional output commands
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Integer, real, and parameter (=constants) data types Nets can be described based on disciplines Disciplines associate: Potential and flow attributes for conservative systems Any potential attributes for signal-flow signal flow systems Attributes describe units, absolute tolerance for convergence, names of potential and flow access functions E E.g.: C Conservative i di discipline: i li discipline electrical potential Voltage p g ; flow Current ; enddiscipline E g : Signal-flow E.g.: Signal flow disciplines: discipline voltage discipline current potential Voltage; potential Current; enddiscipline enddiscipline
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VerilogA Examples
module resistor(p, n); // Both ports have electrical discipline, can be connected with HSpice electrical p, n; parameter real r = 1; analog begin // <+ describes analog behavior, V(p,n) sets voltage between p and n V(p,n) <+ r*I(p, n); end endmodule module capacitor(p, n); electrical l i l p, n; parameter real c = 1; analog begin // ddt: Time derivative operator, I(p,n) sets current between p and n I(p,n) <+ c*ddt(V(p, n)); end endmodule
Copyright Sill, 2008 Sill, HSpice 66
Examples: E amples 1) .hdl Adders.va All VerilogA modules from file Adders.va Adders.va are loaded 2) .hdl Adders-fast.va ha1 ha_f .hdl Adders-slow.va ha1 ha_s Module ha1 from file Adders-fast.va loaded alias: ha_f Module ha1 from file Adders-slow.va loaded alias: ha_s
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xxx <nodes> moduleName [param=<param_value>] xxx: Name <param_value>: Parameters VerilogA devices are X elements VerilogA device can have zero or more nodes VerilogA g device can accept p zero or more p parameter assignments g Example:
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VerilogA device quantities accessible with known HSpice output statements ( (.PRINT,.PROBE, .DOUT, ..): ) Port current and voltage Internal node voltage Internal module variables Module parameters Example: In VerilogA file: module va_fnc(plus, minus); inout plus, minus; electrical plus, minus; In HSpice S file: f x1 1 2 va_fnc .print print I(x1.plus) I(x1 plus)
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Noise Analysis
Flicker
Mainly M i l generated t db by t transistors i t i in a circuit i it Function of component geometry and its magnitude Drops as frequency increases
Shot
noise
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Noise Models
Each resistor, diode, and transistor generates some type of inherent noise Modeling of noise generating elements with noiseless element combined with noise current or voltage source
Noise Simulation
For noise analysis: .LIN and .AC statements .LIN LIN command extracts noise and linear transfer parameters for a general multi-port network .LIN LIN noisecalc=1 Circuit ports must be identified using port elements Port elements behave as noiseless impedance or as voltage source in series with port impedance (default impedance p is 50 ohms) ) Frequency points at which noise calculations are performed are same points defined by the .AC statement The noise calculations for each frequency point will be output to the listing file
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First step: all the signal voltage and current sources set t 0 to
Next step: each resistor, diode, and transistor modeled with its noise model Then: calculation of output voltage resulting from the noise signal (one element at a time) Here: 1. Replacement of Rs with its noise model 2. Calculation of PSD of the noise voltage (PSDRs s) as seen at output port for one frequency
Here: 3 Replacement 3. R l t of f M1 with ith it its noise i model d l 4. Calculation of PSD of the noise voltage (PSDM1) as seen at output p p port for same frequency q y Total PSD (PSDtotal) at observed frequency is sum of all PSD [V/Hz]
PSDtotal = PSDRs + PSDM1
Delay-model: t = RC C is load capacitance (gate-source, drain-diffusion capacitances) R is i resistance i t b t between Drain D i and dS Source if th the transistor is conductive f is the fanout fano t (ratio of o output tp t load to input inp t capacitance) n is a measurement for the transistor size W (n times minimum transistor)
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PMOS: R ~ 2
,C ~ W
Sizing: Fanout
Fanout of f and equivalent circuit
2n n
2n n
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Dela ay
LE Model: Model to size transistors in logical gates Drive Strength: 1 / (effective resistance of gate) Logical Effort (LE): Ratio of input capacitance of device t input to i t capacitance it of f normal l skew k I Inverter t with ith same drive strength Gain = Cout/Cin LE = fanout fano t LE Optimal gain for each device of a circuit with n stages:
C g gain =n C
out _ circuit
LE
stages
in _ circuit
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Optimization
Optimization: automatically generation of model parameters and component p values from set of electrical specifications p or measured data Circuit-result targets are part of the .MEASURE command structure .MODEL MODEL statement for setup set p of optimization. optimi ation Incremental optimization technique At first: solving of DC parameters Then: AC parameters Finally: transient parameters Creation of input netlist file with: Minimum and maximum parameter and component limits Variable parameters and components Initial estimate of selected parameter and component values Circuit p performance g goals or model-versus-data error function
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Optimization Statements
.PARAM parameter=OPTxxx (init, min, max) Definition of initial initial, lower lower, and upper bounds .Model modname OPT <parameters> Definition of relin, relout, itropt, (see next slide) .MEASURE measurename ... <GOAL=| < | > val> Space on both sides of relational operators (=, <, >) .DC, .AC, or .TRAN analysis statement, with: OPTIMIZE=OPTxxx Indication that analysis is for optimization Specifies S ifi parameter t reference f name used d in i .PARAM PARAM optimization ti i ti statement RESULTS=measurename Measurement reference name MODEL=modname Optimization reference name
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.Model Options
ITROPT
Maximum number of iterations Typically value: 20-40 iterations
RELIN
Relative input parameter for convergence Default: 0.001 If all optimizing input parameters vary between iterations by smaller than RELIN solution converges
RELOUT
Relative tolerance to finish optimization Default: 0.001 If relative difference of RESULTS between two iteration smaller than RELOUT optimization is finished
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Optimization - Example
*Optimization of an Inverter .include 'cmos_inv.inc' * ----- Parameter .param wp=optw (2u,1u,10u) .param wn=optw (1u,0.5u,10u) .param supply = 5 *Supply, Stimuli VSupply VDD GND DC supply VInput1 Input GND DC 0 PULSE(0 supply 0 100p 100p 4.9n 10n) * ----- Circuit XInverter1 Input Output1 VDD GND COut1 Output1 GND 10f CMOS_Inverter WN=wn WP=wp
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Generic tool for simulation of variation effects in device characteristics h t i ti Variations expressed as distributions on model parameters At each sample of Monte Carlo analysis:
Random values for selected parameters Execution of complete simulation
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Modeling of device characteristics over parameter Recalculation of distribution function each time that element or model keyword uses a parameter Syntax (only Gaussian)
.PARAM xx=GAUSS(nominal_val, rel_variation, sigma <,+ multiplier>) .PARAM xx=AGAUSS(nominal_val, abs_variation, sigma <,+ multiplier>) With:
xx - parameter name GAUSS - Gaussian distribution function (relative variation) AGAUSS - Gaussian distribution function (absolute variation) nominal_val - Nominal value abs_variation - Variation of the nominal_val by +/- abs_variation. rel variation - Variation of nominal rel_variation nominal_val val by +/ +/- (nominal_val (nominal val rel_variation) rel variation) sigma - abs_variation or rel_variation at sigma level multiplier Many times recalculation, saving of largest deviation (default:1)
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With:
Val Amount of random samples to produce List num Amount of samples to execute Val firstrun=num - Sample number on which simulation starts List(<num1:num2><num3>) List of executed samples
Temperature Analysis
Specified in .MODEL statement Temperature (C) ( C) for measurement and extraction of model parameters Default: 25 C Specified in .TEMP statement Temperature (C) for simulation of all elements Default: TNOM (specified in .option statement) Circuit temperature + optional amount (DTEMP) Specified in element statement (e.g.: R1 1 0 DTEMP=27)
Source: Synopsys, 2007
Circuit temperature
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Exercises
VerilogA
Simulate the OR with the VerilogA Inverter (trans_or_va.sp, modules.va) Create a VerilogA voltage amplifier and a current amplifier Create a VerilogA 4-Bit DAC (digital analog converter) Create a Verilog Counter
Optimizer
Optimize the Inverter circuit (trans_inv_opt.sp) Create an Inverter chain of 6 Inverter with a fanout of 64 and optimze the delay
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Exercises
Noise analysis
Simulate the example circuit from the slide Noise Analysis Example Make a noise analysis of this current mirror from 10Hz to 10GHz
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Additional Information
Do all MOS p-channel substrates connect to either VCC or positive supplies? Do all MOS n-channel substrates connect to either GND or negative supplies? Do all vertical NPN substrates connect to either GND or negative supplies? Do all lateral PNP substrates connect to negative supplies? Do all latches have either an OFF transistor, a .NODESET, or an .IC, on one side? Do all series capacitors have a parallel resistance resistance, or is .OPTION DCSTEP set?
Source: Synopsys, 2007 Sill, HSpice 101
Ideal current sources require large values of .OPTION OPTION GRAMP GRAMP, especially for BJT and MESFET circuits. Such circuits do not ramp up with the supply voltages, and can force reverse-bias conditions, leading to excessive nodal voltages. Schmitt triggers are unpredictable for DC sweep analysis, and sometimes for operating points for the same reasons that oscillators and flip-flops are unpredictable. Use slow transient. Large circuits tend to have more convergence problems, because they have a higher probability of uncovering a modeling problem. Circuits that converge individually individually, but fail when combined combined, are almost guaranteed to have a modeling problem. Open-loop op-amps have high gain, which can lead to difficulties in converging converging. Start op-amps op amps in unity unity-gain gain configuration configuration, and open them up in transient analysis, using a voltage-variable resistor, or a resistor with a large AC value (for AC analysis).
Source: Synopsys, 2007
Remove all R ll convergence-related l t d options, ti and dt try fi first t with ith no special .OPTION settings. Check non-convergence diagnostic tables for non-convergent nodes. d Look up non-convergent nodes in the circuit schematic. They are usually latches, Schmitt triggers, or oscillating nodes. For stubborn convergence failures, bypass DC all together, and use .TRAN with UIC set. Continue transient analysis until transients settle out, then specify the .OP time, to obtain an operating point during the transient analysis. To specify an AC analysis during the transient analysis, add an .AC statement to the .OP time statement. SCALE and SCALM scaling options have a significant effect on parameter values in both elements and models. Be careful with units.
Source: Synopsys, 2007 Sill, HSpice 103
.LIN command extracts noise and linear transfer parameters for a general multi-port multi port network. network Used with the .AC command Measurement of:
Multi-port scattering [S] parameters Noise parameters Stability y factors Gain factors Matching coefficients
Analysis similar to basic small small-signal, signal swept swept-frequency frequency .AC analysis, Automatically calculation of series of noise and smallsignal i lt transfer f parameters t between b t the th terminals t i l identified using port (P) elements.
PORT Element
Port element identification of ports used in .LIN analysis Each port element requires unique port number Each port has associated system impedance (default 50 ohms) Port element behaves as noiseless impedance or a voltage source in series with the port impedance for all other analyses (DC, AC, or TRAN) Element can be used as a pure terminating resistance or as a voltage or power source.