The RF Line: Semiconductor Technical Data
The RF Line: Semiconductor Technical Data
The RF Line
MRF898
60 W, 850 960 MHz RF POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 30 55 4.0 10 175 1.0 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
THERMAL CHARACTERISTICS
Max 1.0 Unit C/W
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) EmitterBase Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES 30 55 4.0 10 Vdc Vdc Vdc mAdc (continued)
REV 6
MRF898 39
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE 20 50 150
DYNAMIC CHARACTERISTICS
Output Capacitance (1) (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) Cob 60 pF
FUNCTIONAL TESTS
CommonBase Amplifier Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Output Mismatch Stress (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz, VSWR = 5:1, all phase angles) Gpb No Degradation in Output Power 7.0 60 7.9 65 dB %
NOTE: 1. Value of Cob is that of die only. It is not measurable in MRF898 because of internal matching network.
L2
C9
GND L4 DUT 50 OHMS C1 TL1 TL2 TL3 TL4 TL5 C2 TL6 50 OHMS L1
TL7
C12
B1, B2, B3 Bead, Ferroxcube 5639065/3B C1, C2, C12 39 pF, 100 Mil Chip Capacitor C3, C11 91 pF, Mini Underwood or Equivalent C4, C7, C9 10 F, 35 V Electrolytic C5 4000 pF, 1.0 kV Ceramic C6, C10 1000 pF, 350 V Unelco or Equivalent C8 47 pF, 100 Mil Chip Capacitor L1, L4 4 Turns #18 AWG Choke L2 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor L3 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor
TL1, TL6 50 Ohm Microstrip TL2 400 x 950 Mils TL3, TL4 140 x 200 Mils TL5 320 x 690 Mils TL7 260 x 230 Mils Board 3M Epsilam10, 50 Mil Bias Boards 1/32 G10 or Equivalent
MRF898 40
100 850 MHz Po, OUTPUT POWER (WATTS) 80 900 MHz 60 960 MHz
40 VCC = 24 V
40
20
20 VCC = 24 V
18
850
950
10 GPA
80 70
6 Pin = 12 W VCC = 24 V
60 50
40
VSWR
850
960
Po = 60 W, VCC = 24 V F MHz 850 900 960 Zin Ohms 11.2 + j2.3 8.2 j1.0 4.7 j2.0 ZOL* Ohms 4.0 + j3.9 4.4 + j1.8 5.3 + j3.7
ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 850 MHz ZOL* 900 Zin 900 960 960
f = 850 MHz
PACKAGE DIMENSIONS
L
IDENTIFICATION NOTCH 4
N
5 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
2 PL
Q D
4 PL
2 PL
0.13 (0.005)
2 PL
T A
INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.075 0.090 0.095 0.115 0.110 0.130 0.155 0.175 0.004 0.006 0.090 0.116 0.725 BSC 0.415 0.435 0.120 0.135
MILLIMETERS MIN MAX 24.52 25.01 9.91 10.41 6.35 7.36 1.91 2.28 2.42 2.92 2.80 3.30 3.94 4.44 0.11 0.15 2.29 2.94 18.41 BSC 10.55 11.04 3.05 3.42
C E T
SEATING PLANE
H A
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MRF898 42
*MRF898/D*