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The RF Line: Semiconductor Technical Data

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0% found this document useful (0 votes)
71 views

The RF Line: Semiconductor Technical Data

Transistor Information

Uploaded by

djsdallas69
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOTOROLA

The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF898/D

NPN Silicon RF Power Transistor


. . . designed for 24 Volt UHF largesignal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 960 MHz. Motorola Advanced Amplifier Concept Package Specified 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min Double Input/Output Matched for Wideband Performance and Simplified External Matching Series Equivalent LargeSignal Characterization Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MRF898
60 W, 850 960 MHz RF POWER TRANSISTOR NPN SILICON

CASE 333A02, STYLE 1

MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 30 55 4.0 10 175 1.0 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C

THERMAL CHARACTERISTICS
Max 1.0 Unit C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)


Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) EmitterBase Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES 30 55 4.0 10 Vdc Vdc Vdc mAdc (continued)

REV 6

MOTOROLA RF DEVICE DATA Motorola, Inc. 1994

MRF898 39

ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted.)


Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) hFE 20 50 150

DYNAMIC CHARACTERISTICS
Output Capacitance (1) (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) Cob 60 pF

FUNCTIONAL TESTS
CommonBase Amplifier Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Output Mismatch Stress (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz, VSWR = 5:1, all phase angles) Gpb No Degradation in Output Power 7.0 60 7.9 65 dB %

NOTE: 1. Value of Cob is that of die only. It is not measurable in MRF898 because of internal matching network.

L3 VRE SHORTING PLUG B3 B1

L2

+ VCC C10 C11 C3 GND B2 C4 + + C5 C6 C7 C8

C9

GND L4 DUT 50 OHMS C1 TL1 TL2 TL3 TL4 TL5 C2 TL6 50 OHMS L1

TL7

C12

B1, B2, B3 Bead, Ferroxcube 5639065/3B C1, C2, C12 39 pF, 100 Mil Chip Capacitor C3, C11 91 pF, Mini Underwood or Equivalent C4, C7, C9 10 F, 35 V Electrolytic C5 4000 pF, 1.0 kV Ceramic C6, C10 1000 pF, 350 V Unelco or Equivalent C8 47 pF, 100 Mil Chip Capacitor L1, L4 4 Turns #18 AWG Choke L2 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor L3 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor

TL1, TL6 50 Ohm Microstrip TL2 400 x 950 Mils TL3, TL4 140 x 200 Mils TL5 320 x 690 Mils TL7 260 x 230 Mils Board 3M Epsilam10, 50 Mil Bias Boards 1/32 G10 or Equivalent

Figure 1. 850 960 MHz Broadband Test Circuit

MRF898 40

MOTOROLA RF DEVICE DATA

100 850 MHz Po, OUTPUT POWER (WATTS) 80 900 MHz 60 960 MHz

100 Pin = 16 W Po, OUTPUT POWER (WATTS) 80 12 W 60 10 W 8W Pin = 14 W

40 VCC = 24 V

40

20

20 VCC = 24 V

10 12 14 16 Pin, INPUT POWER (WATTS)

18

850

900 f, FREQUENCY (MHz)

950

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Frequency

100 Pin = 14 W Po, OUTPUT POWER (WATTS) 80 12 W

10 GPA

100 90 c , COLLECTOR EFFICIENCY (%)

8 G PA , POWER GAIN (dB)

80 70

60 10 W 8W 20 f = 900 MHz 0 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 28

6 Pin = 12 W VCC = 24 V

60 50

40

40 INPUT VSWR 1.3 1.2 1.1:1 30 20 10 0

VSWR

850

900 f, FREQUENCY (MHz)

960

Figure 4. Output Power versus Supply Voltage

Figure 5. Typical Broadband Circuit Performance

Po = 60 W, VCC = 24 V F MHz 850 900 960 Zin Ohms 11.2 + j2.3 8.2 j1.0 4.7 j2.0 ZOL* Ohms 4.0 + j3.9 4.4 + j1.8 5.3 + j3.7

ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 850 MHz ZOL* 900 Zin 900 960 960

f = 850 MHz

Figure 6. Input/Output Impedance versus Frequency MOTOROLA RF DEVICE DATA MRF898 41

PACKAGE DIMENSIONS

L
IDENTIFICATION NOTCH 4

N
5 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.

2 PL

Q D
4 PL

2 PL

0.13 (0.005)
2 PL

T A

DIM A B C D E F H J K L N Q STYLE 1: PIN 1. 2. 3. 4. 5. 6.

INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.075 0.090 0.095 0.115 0.110 0.130 0.155 0.175 0.004 0.006 0.090 0.116 0.725 BSC 0.415 0.435 0.120 0.135

MILLIMETERS MIN MAX 24.52 25.01 9.91 10.41 6.35 7.36 1.91 2.28 2.42 2.92 2.80 3.30 3.94 4.44 0.11 0.15 2.29 2.94 18.41 BSC 10.55 11.04 3.05 3.42

C E T
SEATING PLANE

H A

BASE EMITTER BASE BASE COLLECTOR BASE

CASE 333A02 ISSUE C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF898 42

*MRF898/D*

MRF898/D MOTOROLA RF DEVICE DATA

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