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This document contains homework problems about calculating properties of various semiconductor materials and crystals based on given information about their crystal structures, lattice parameters, and atomic masses. It also includes questions about calculating vacancy concentrations in metals, estimating interaction energies and mean distances between particles in sodium metal, and determining the electrical conductivity and electron mobility in gold.

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348 views

Homework

This document contains homework problems about calculating properties of various semiconductor materials and crystals based on given information about their crystal structures, lattice parameters, and atomic masses. It also includes questions about calculating vacancy concentrations in metals, estimating interaction energies and mean distances between particles in sodium metal, and determining the electrical conductivity and electron mobility in gold.

Uploaded by

myalya
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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HW Assignment 2 Harris Electronic Materials SPRING 2013 Assigned 1/25/13 Due 2/8/13 _____________________________________________________________ 1.

25 Diamond and zinc blende Si has the diamond and GaAs has the zinc blende
crystal structure. Given the lattice parameters of Si and GaAs, a = 0.543 nm and a = 0.565 nm, respectively, and the atomic masses of Si, Ga, and As as 28.08, 69.73 g/mol, and 74.92, respectively, calculate the density of Si and GaAs. What is the atomic concentration (atoms per unit volume) in each crystal?

_____________________________________________________________ 1.26 Zinc blende, NaCl and CsCl


a. InAs is a III-V semiconductor that has the zinc blende structure with a lattice parameter of 0.606 nm. Given the atomic masses of In (114.82 g mol-1) and As (74.92 g mol-1), find the density. b. CdO has the NaCl crystal structure with a lattice parameter of 0.4695 nm. Given the atomic masses of Cd (112.41 g mol-1) and O (16.00 g mol-1), find the density. c. KCl has the same crystal structure as NaCl. The lattice parameter a of KCl is 0.629 nm. The atomic masses of K and Cl are 39.10 g mol-1 and 35.45 g mol-1 respectively. Calculate the density of KCl.

1.28 Si and SiO2


a. Given the Si lattice parameter a = 0.543 nm, calculate the number of Si atoms per unit volume, in nm-3. b. Calculate the number of atoms per m2 and per nm2 on the (100), (110) and (111) planes in the Si crystal as shown on Figure 1.75. Which plane has the most number of atoms per unit area?

c. The density of SiO2 is 2.27 g cm-3. Given that its structure is amorphous, calculate the number of molecules per unit volume, in nm-3. Compare your result with (a) and comment on what happens when the surface of an Si crystal oxidizes. The atomic masses of Si and O are 28.09 and 16, respectively.

Figure 1.75: Diamond cubic crystal structure and planes. Determine what portion of a black-colored atom belongs to the plane that is hatched.

1. 29 Vacancies in metals
a. The energy of formation of a vacancy in the copper crystal is about 1 eV. Calculate the concentration of vacancies at room temperature (300K) and just below the melting temperature, 1084 C. Neglect the change in the density which is small. b. The table below shows the energies of vacancy formation in various metals with close-packed crystal structures and the melting temperature Tm. Plot Ev in eV vs. Tm in Kelvins, and explore if there is a correlation between a and Tm. Some materials engineers take Ev to be very roughly 10kTm. Do you think that they are correct? (Justify.)

b. The vacancy formation Ev and the melting temperature Tm are plotted as follows. The 10kTm line is also plotted on the same graph.

2.4 2.2
Al

Vacancy Formation Energy


Ag Mg Pd Pt Au Pb Best Fit

2 1.8 1.6
E v eV
Cu Ni 10kT

1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 500 1000 1500 2000 2500 Melting Temperature, T m (K)

Figure 1Q29-1: Plot of vacancy formation energy versus melting temperature Tm. The 10kTm line is also on plotted on the same graph. ________________________________________________________________________

1.30 Vacancies in silicon


In device fabrication, Si is frequently doped by the diffusion of impurities (dopants) at high temperatures, typically 9501200 C. The energy of vacancy formation in the Si crystal is about 3.6 eV. What is the equilibrium concentration of vacancies in an Si crystal at 1000 C. Neglect the change in the density with temperature which is less than 1percent in this case.

2.1 Electrical conduction Na is a monovalent metal (BCC) with a density of 0.9712

g cm-3. Its atomic mass is 22.99 g mol-1. The drift mobility of electrons in Na is 53 cm2 V1 -1 s . a. Consider the collection of conduction electrons in the solid. If each Na atom donates one electron to the electron sea, estimate the mean separation between the electrons. (Note: if n is the concentration of particles, then the particles mean separation d = 1/n1/3.) b. Estimate the mean separation between an electron (e-) and a metal ion (Na+), assuming that most of the time the electron prefers to be between two neighboring Na+ ions. What is the approximate Coulombic interaction energy (in eV) between an electron and an Na+ ion?

c. How does this electron/metal-ion interaction energy compare with the average thermal energy per particle, according to the kinetic molecular theory of matter? Do you expect the kinetic molecular theory to be applicable to the conduction electrons in Na? If the mean electron/metal-ion interaction energy is of the same order of magnitude as the mean KE of the electrons, what is the mean speed of electrons in Na? Why should the mean kinetic energy be comparable to the mean electron/metalion interaction energy? d. Calculate the electrical conductivity of Na and compare this with the experimental value of 2.1 107 -1 m-1 and comment on the difference.

2.3 Conduction in gold Gold is in the same group as Cu and Ag. Assuming that
each Au atom donates one conduction electron, calculate the drift mobility of the electrons in gold at 22 C. What is the mean free path of the conduction electrons if their

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