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Data Sheet

The 1N4387 is a high power silicon multiplier varactor diode with a maximum ratings of 200 mA current, 150 V reverse voltage, and 20 W power dissipation. It has a breakdown voltage of 150V minimum, a capacitance of 35 pF typical, and can output 15W minimum at 50 MHz frequency multiplication when used as a frequency tripler with an input power of 30W at 150 MHz frequency.

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Muhamad Anwar Iscandare
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18 views1 page

Data Sheet

The 1N4387 is a high power silicon multiplier varactor diode with a maximum ratings of 200 mA current, 150 V reverse voltage, and 20 W power dissipation. It has a breakdown voltage of 150V minimum, a capacitance of 35 pF typical, and can output 15W minimum at 50 MHz frequency multiplication when used as a frequency tripler with an input power of 30W at 150 MHz frequency.

Uploaded by

Muhamad Anwar Iscandare
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1N4387

SILICON MULTIPLIER VARACTOR DIODE

PACKAGE STYLE DO- 4 DESCRIPTION:


The 1N4387 is a High Power Silicon Multiplier Varactor Diode.

MAXIMUM RATINGS
IO VR PDISS TJ TSTG JC
O O

200 mA 150 V 20 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 5.0 C/W


O O O O

1 = Anode 2 = Cathode

NONE

CHARACTERISTICS
SYMBOL
VBR CT Q fin POUT(x3) PIN = 30 W IR = 10 A VR = 6.0 V VR = 6.0 V

TC = 25 C

TEST CONDITIONS
f = 1.0 MHz f = 50 MHz FIN = 150 MHz

MINIMUM
150

TYPICAL

MAXIMUM
35

UNITS
V pF --MHz W

200 150 15 30

A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.

REV. A

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