Test Data Mosis 0
Test Data Mosis 0
RUN: V11L
)
TECHNOLOGY: SCN05
INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: SMSCN3ME06_ON-SEMI
TRANSISTOR PARAMETERS
W/L
MINIMUM
Vth
3.0/0.6
SHORT
Idss
Vth
Vpt
20.0/0.6
WIDE
Ids0
20.0/0.6
LARGE
Vth
Vjbkd
Ijlk
Gamma
50/50
K' (Uo*Cox/2)
Low-field Mobility
0.80
-0.88 volts
460
0.70
12.5
-257
uA/um
-0.87 volts
-12.5 volts
< 2.5
< 2.5
pA/um
0.69
11.1
<50.0
0.50
-0.92
-11.7
<50.0
0.57
volts
volts
pA
V^0.5
57.1
608.53
-19.2 uA/V^2
204.62 cm^2/V*s
COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameter XL in your
SPICE model card.
Design Technology
XL (um) XW (um)
----------------------- -----SCMOS_SUBM (lambda=0.30)
0.10
0.00
SCMOS (lambda=0.35)
0.00
0.20
FOX TRANSISTORS
Vth
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance
Gate Oxide Thickness
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance
GATE
Poly
N+
P+ N_W_U_PLY POLY PLY2_HR POLY2 M1 UNITS
84.6 108.5 847.4 23.3 1050
43.0 0.09 ohms/sq
60.5 153.4
16.1
27.0
ohms
142
angstrom
M2
0.09
0.86
M3
0.05
0.80
N_W
814
UNITS
ohms/sq
ohms
POLY2
M1
29
37
M2
12
16
M3
8
12
903
68
58
15
29
12
32
38
49
27
34
51
48
69
UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0
2.05
2.30
0.46
4.46
2.48
-18.76
volts
volts
volts
volts
volts
99.53 MHz
150.35 MHz
0.50 uW/MHz/gate
1.02 uW/MHz/gate
N_W
92
UNITS
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um^2
aF/um
aF/um
aF/um
aF/um
aF/um
aF/um
7197
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
27
1.7E17
-0.0852395
1E-8
0
0.3971616
1E-13
1.982902E5
1.292393E-6
1.298492E-4
0.0866685
1.755035E-7
0
-1.366211E-4
2.4E-4
2.804673E-3
2.1480697
0.1047169
1.502056E-8
84.6
-1.5
0.022
-5.6E-11
1
0
0
2
1.89E-10
0.8482016
0.8
0.8
3.249769E-3
2.503364E-3
LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
49
1.42E-8
0.6411523
26.1121444
1.063778E-9
0
-0.5
1.41332E-18
0.8107957
5E-6
0.3
-0.0189653
8.705476E-8
2.219467E-9
0.8108577
0
-3.229532E-4
5.881068E-4
3.45494E-3
0
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-9
0.4326766
0.2019414
0.2019414
230.9847454
3.606834E-3
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
27
1.7E17
7.871921E-3
1E-8
0
0.3064583
2.408572E-9
7.762453E4
5.611458E-7
1.363859E-3
-0.0260688
2.370297E-7
0
-0.0620394
2.4E-4
3.81997E-4
2.4172623
LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
49
1.42E-8
-0.9152268
1.4894229
1.002614E-9
0
-0.3
1E-21
0.7616978
7.767182E-9
0.7560318
-0.0518397
1.270513E-7
5.805442E-9
0.8999885
0
-0.2
0.0414719
+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
*
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
3.120264E-3
1E8
0.01
0
0
-7.61E-18
0
1
1
0
2.29E-10
7.149816E-4
2.372517E-10
6.4E-11
0
3.73981E-3
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
-0.0366384
3.394931E-9
108.5
-1.5
0.022
-5.6E-11
1
0
0
2
2.29E-10
0.8791663
0.8
0.8
5.98016E-3
1.236911E-3
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
0.249426
2.957943E-3
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-9
0.4854245
0.2261452
0.2261452
14.8598424
-9.223727E-3