Inverter Layout
Inverter Layout
Peter Cheung Department of Electrical & Electronic Engineering Imperial College London
PYKC Oct-25-10
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CAD tools are used to generate the real mask layers for fabrication
Generating the manufacturing mask data is called tapeout Some geometrical layout rules are created to make sure that this tapeout process is possible.
We will be using Steve Rubins Electric (version 8.05) as the main layout editing tools. Install and run Electric, and bring out the Users Manual. Read Chapter 2: Basic Editing. Complete Labs 1 & 2 (from course webpage).
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Transistor nodes
Library cells
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Electric Connectivity
Nodes are connected together using wires (called arcs). You must explicitly CONNECT wires to OBJECTS. Simply having overlaps of colour layers does not imply that they are electrically connected.
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Typically not multiples of one another in order to get the densest layout Difficult to remember Difficult to port from one process to another
Scalable design rules express dimension in normalised units called lambda ( ) Normalise everything so the minimum gate length (i.e. width of poly gate) is 2* All other design rules are expressed in integer multiples of For example:
poly width 2 , space 3 metal width & space 3
Usually requires rounding up These are subsequently scaled to generate masks for a variety of processes
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Disadvantages (on area) is out-weighted by advantages Course web page gives all design rules for MOSIS Scalable process We target to 0.18 technology
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12
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12
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Well Spacing
N-trans and p-trans separate by 12 with room for one wire in between. Metal1 pitch is 6 and Metal2 pitch is 8 . Contact size (including diffusion) is at least 4 .
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Estimate area
Estimate area by counting wiring tracks
Multiply by around 8 to express in . (Assuming you use metal 1 and 2 pitch of 8.)
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Stick Diagram
A stick diagram is a symbolic layout:
Contains the basic topology of the circuit The relative positions of the objects are roughly correct, e.g. transistor 1 is to the right of transistor 2, and under transistor Each wire is assigned a layer, and crossing wires must be on different layers Wires are drawn as stick figures with no width The size of the objects is not to scale Add features such as wire easily in between other wires It is always much faster to design layout on paper using stick diagram first before using the layout CAD tool
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Layout issues
In CMOS there are two types of diffusion
ndiff (green) Poly crossing ndiff makes nMOS transistors pdiff (also green in Electric) Poly crossing pdiff makes pMOS transistors
Be careful, ndiff and pdiff are different You cant directly connect ndiff to pdiff
Must connect ndiff to metal and then metal to pdiff
Cant get ndiff too close to pdiff because of wells Large spacing rule between ndiff and pdiff Need to group nMOS devices together and pMOS devices together because of large spacing rule between ndiff and pdiff
PYKC Oct-25-10
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Run poly vertically and diffusion horizontally, with metal1 horizontal (or the reverse, just keep them orthogonal)
Good default layout plan
Keep diffusion wires as short as possible (just connect to transistor) All long wires (wire that go outside a cell, for example) should be in either m1 or m2. Try to design/layout as regular as possible
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Example: O3AI
OR 3-inputs, AND, then Inverter
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Standard Cells
Uniform cell height Uniform well height M1 Vdd and Gnd rails M2 access to I/Os Well/substrate taps Exploits regularity
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Pitch Matching
Design snap-together cells for datapaths and arrays (such as RAM & ROM)
Plan wires into cells Connect by abutment like putting lego block together. No extra wire area needed
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