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PJ13007 NPN Epitaxial Silicon Transistor: Absolute Maximum Ratings (Ta 25

This document provides specifications for the PJ13007 NPN Epitaxial Silicon Transistor. It is suitable for high-speed switching applications like switching regulators and motor controls. The transistor has a maximum collector-emitter voltage of 400V, collector current of 8A (16A pulse), and junction temperature of 150°C. Electrical characteristics include a minimum current gain of 8 at 2A collector current, collector-emitter saturation voltage of 1V at 2A and 2V at 5A collector current.

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O Mago Branco
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2K views2 pages

PJ13007 NPN Epitaxial Silicon Transistor: Absolute Maximum Ratings (Ta 25

This document provides specifications for the PJ13007 NPN Epitaxial Silicon Transistor. It is suitable for high-speed switching applications like switching regulators and motor controls. The transistor has a maximum collector-emitter voltage of 400V, collector current of 8A (16A pulse), and junction temperature of 150°C. Electrical characteristics include a minimum current gain of 8 at 2A collector current, collector-emitter saturation voltage of 1V at 2A and 2V at 5A collector current.

Uploaded by

O Mago Branco
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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PJ13007

NPN Epitaxial Silicon Transistor

HIGH VOLTAGE SWITCH MODE APPLICATION


• High Speed Switching TO-220
• Suitable for Swiching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS (Ta= 25 ℃ )

Characteristic Symbol Rating Uint


Collector Base Voltage VCBO 700 V
Collector Emitter VCEO 400 V
Voltage P in : 1. Base
Emitter Base Voltage VEBO 9 V 2. Collector
Collector Current (DC) Ic 8 A 3. Emitter

Collector Current Ic 16 A
(Pulse)
Base Current IB 4 A ORDERING INFORMATION
Collector Dissipation Pc 80 W
Junction Temperature Tj 150 ℃ Device Operating Temperature Package
Storage Temperature Tstg -65 ~150 ℃
PJ13007CZ -20℃～+85℃ TO-220

ELECTRICAL CHARACTERISTICS(Ta= 25 ℃ )

Characteristic Symbol Test Condition Min Typ Max Unit


*Collector Emitter Sustaining Voltage VCEO(SUS) Ic = 10mA, IB = 0 400 V
Emitter Cutoff Current IEBO VEB =9V, Ic=0 1 mA
*DC Current Gain hFE VCE =5V, Ic =2A 8 60
VCE =5V, Ic =5A 5 30
*Collector Emitter Saturation Voltage VCE (sat) Ic =2A, IB =0.4A 1 V
Ic =5A, IB =1A 2 V
Ic =8A, IB =2A 3 V
*Base Emitter Saturation Voltage VBE (sat) Ic =2A, IB =0.4A 1.2 V
Ic =5A, IB =1A 1.6 V
Output Capacitance C OB VCB =10V, f =0.1MHz 110 pF
Current Gain Bandwidth Product fT VCE =10V, Ic =0.5A 4 MHz
Turn On Time t on VCC =125V, Ic =5A 1.6 μS
Storage Time ts IB1 =IB2 =1A 3 μS
Fall Time tf 0.7 μS

 Pulse Test: PW≤300 μS, Duty Cycle ≤2 %

1-2 2002/01.rev.A
PJ13007
NPN Epitaxial Silicon Transistor

2-2 2002/01.rev.A

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