Design - Tips - Dec06 + Gate Drive Design Tips
Design - Tips - Dec06 + Gate Drive Design Tips
Direct Drive from the PWM There are silicon solutions to this
Controller problem. I would use these for low
Most modern control chips incorpo- voltage applications, but not for off-line
rate an output driver stage, usually con- circuits. High-side integrated driv-
sisting of a totem-pole arrangement of ers remove too much control from the
two transistors. This output can be used
to directly drive the gate of a power FET,
as shown in Fig 1.
Data sheets show that several amps of the resistor in half. For a DCM fly-
can be provided from the PWM control- back, it is surprising how slowly you can
Figure 1: The power FET is driven
ler output, more than enough to drive turn on the device without significant
directly from the output of the PWM
low-power devices. However, a FET switching loss.
controller.
input is a large capacitance, and it’s
usually not a good idea to try and use Turn off needs to be faster to provide
the full available current. It can lead to rapid shut down during overcurrent
increased EMI due to rapid turn-on and conditions. Experiment with different
turn-off, excessive reverse recovery loss values, rather than simply using the val-
in rectifiers, and noise issues inside the ues shown in the application notes. For
PWM controller itself. Clock jitter, and more information on how fast you have
sporadic interruptions in the normal to control the FET, refer to [3].
operations can occur. [2].
Dedicated Gate Drivers
It’s a good idea to limit the current As power levels rise, you will find the
from the PWM controller with the net- values of the gate resistors need to Figure 2: Slow-down resistors are
work shown in Fig. 2. Two resistors are decrease to minimize switching loss. used to control the turn-on and
used—one to control the turn-on time, For higher power circuits, it is common turn-off time of the power FET. We
and one to control the turn-off time. A industry practice to use a high-current usually turn the device off faster than
diode is used to separate the two func- driver chip. This prevents interference it is turned on in order to achieve fast
tions, but can be omitted in some cases with the PWM controller, and also al- current protection.
if the timing is less critical. lows better layout of the PCB. There
are many good drivers on the market,
We usually turn on the FET slowly or you can even build your own high-
when running a low-power converter. current totem-pole driver if you want to
Don’t be afraid to experiment with raise performance while reducing costs.
the value of the resistor Ron. I’ve used
values as low as 1 ohm, and as high as Isolated Gate Drives Figure 3: For larger power devices,
1 kohm in designs. My rule of design is At higher power levels, we start to use and higher power switching, it’s a
to increase the resistor while monitor- topologies such as the two-switch for- good idea to use separate gate drive
ing the switching waveforms and power ward converter, half-bridge converter, or circuits to switch the devices rapidly.
dissipation in the FET. If the temperature full-bridge converter. All of these topolo- Gate resistors are still used, but are
starts to rise significantly, cut the value gies require a floating switch to be driven. not shown here.
former (usually a toroid for high perfor- tor is connected across the gate drive
mance.) The secondary is connected transformer for an indefinite period. This
directly to the gate of the FET, and any can lead to saturation of the transformer,
slow-down resistors should be placed in as shown in Fig. 6b. When the trans-
the primary of the transformer. Note the former saturates, the secondary is a
use of zeners on the gate for transient short circuit, and the secondary capaci-
protection. Catch diodes are needed at tor can turn on the FET. The saturation
the output of the driver, and should not can be avoided with a gapped core, and
be omitted even if initial tests show that smaller value of capacitor, but this will
there is no problem with the reactive increase the reactive current needed
current in the transformer. from the gate driver, and may produce
other problems.
The circuit of Fig. 4 provides a sec-
ondary gate waveform with a negative Isolated Gate Drives
value when the FET is off. This greatly for the Bridge Converters
enhances common-mode noise im- The half- and full-bridge converters
munity, crucial for a bridge circuit. are isolated applications that need a
However, the negative waveform also very rugged drive scheme. During the
has the disadvantage of reducing the switch off time, the opposite side of the
voltage applied when the switch is on. bridge will turn on, impressing a high
At short duty cycles, the positive pulse common-mode voltage to the off device.
Figure 4: The most rugged scheme
is largest. At a 50% duty cycle, half the
for isolated drives uses a gate drive
available gate voltage is lost. At large
transformer as shown. Catch diodes
duty cycles, there may not be enough
are needed for reactive current drives,
voltage to properly turn the FET on.
and a dc blocking capacitor prevent
The transformer-coupled circuit is most
saturation of the transformer. The
effectively used with duty cycles from
capacitor causes a level shift in the
0-50%. Fortunately, this is exactly what
output drive voltage, and this varies
is needed for the forward, full- and half-
with duty cycle.
bridge converters.
Fig. 4 shows the most rugged way The circuit works well during steady-
to achieve a floating drive. The output state operation (a gate load resistor is Figure 7: Two separate gate drive
of the drive chip couples through a dc- recommended), but when the PWM con- transformers are recommended for
blocking capacitor to a small trans- troller shuts off, the dc blocking capaci- the half-bridge converter.
Summary
Gate drive circuits are a crucial part
of design. Make sure you use the right
scheme, and do not blindly copy an
application note. Gate drive transform-
ers add a level of ruggedness to your
design that cannot be achieved with
silicon solutions. If you are designing at
high power levels, they are an essen-
tial element. While you need to think
through all the components in a gate
drive, be careful not to overcomplicate
Figure 8: The full bridge converter also uses two transformers for rugged de- the design. Additional active elements
sign. Two FETs are driven from two separate secondaries of each gate drive to supposedly speed up the device
transformer. switching do not usually offer improve-
ments in overall performance, but
they do introduce new potential failure
mechanisms. Keep your gate circuits
as simple as possible.
Additional Reading
[1] “Design and Application Guide for
High Speed MOSFET Gate Drive Cir-
cuits”, Lazslo Balogh, Texas Instruments
Application Note.
[2] “Six Reasons for Power Supply
Instability”, Ray Ridley, www.switching-
powermagazine.com
[3] “Power Supply Stress Testing”, Ray
Ridley, www.switchingpowermagazine.
com
www.ridleyengineering.com
Figure 9: The phase-shifted full bridge uses a bi-directional transformer
on each leg, Note the polarity of the secondaries.