Scribd
Upload
80 views

Sheet 1

The document contains 10 problems related to calculating properties of intrinsic and doped silicon and germanium semiconductors including: 1) Calculating the electron density in intrinsic silicon given resistivity and mobilities. 2) Calculating current densities in a silicon bar from given current, area, and mobilities. 3) Calculating impurity density in p-type germanium from given resistivity and hole mobility. 4) Calculating drift velocities, conductivity, and current in intrinsic germanium for a given potential difference using mobilities and intrinsic carrier density.

Uploaded by

Ahmed Abd AlRahman
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
80 views

Sheet 1

The document contains 10 problems related to calculating properties of intrinsic and doped silicon and germanium semiconductors including: 1) Calculating the electron density in intrinsic silicon given resistivity and mobilities. 2) Calculating current densities in a silicon bar from given current, area, and mobilities. 3) Calculating impurity density in p-type germanium from given resistivity and hole mobility. 4) Calculating drift velocities, conductivity, and current in intrinsic germanium for a given potential difference using mobilities and intrinsic carrier density.

Uploaded by

Ahmed Abd AlRahman
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 1

Sheet(1)

1-the resistivity of intrinsic silicon at room temperature is 1950 Ω.m. if the


mobilities of electrons and holes are 0.15 and 0.05 m2 /v.s respectivily
calculate the density of electrons.

2-A silicon bar of sectional area 4x10-4 m2 carries a current of 2µA .calculate
the current denity of holes and electrons.if µn=0.15m2/v.s&µp=0.05m2/v.s.

3-A sample of p-type germanium has a resistivity of 0.025 Ω.m.calculate


the density of third group impurity atoms in the samlpe.mobility of holes in
Ge=0.17m2/v.s.

4-a potential difference of 10V is applied longitudinally to a rectangular


specemn of intrinsic germanium of length 2.5cm,width 0.4cm and thickness
of 0.15cm.calculate at room temperature:-
(i)electron and hole drift velocities.
(ii)the conductivity of intrinsic Ge if intrinsic carrier desity ni =2.5x1013 /cm3
(iii)the total current,given that:- µn=0.38m2/v.s&µp=0.18m2/v.s.

5-find the concentration of holes and of electrons in p-type germanium at


300o K if the conductivity is 100 (Ω.m)-1& ni =2.5x1013 /cm3 & q=1.6x10-19
&µp=0.18m2/v.s.

6-if the reverse satuation current in a p-n junction silicon diode is 1 nA,
what is the applied voltage for a forward current of 2.5µA.

7-A silicon diode at room temperature (300o K) conducts 1mA at 0.7V,given


that the voltage increases to 0.8V,calculate the diode current assume η=2.

8-for what voltage will the reverse current in a p-n junction silicon diode
reach 95% of its saturation value at room temperature.

9-find the conductivity of germanium:-


(a)in intrinsic condition at 300o K.
(b)with donor impurity of 1 part in 106 .
(c)with acceptor impurity of 1 part in 107 .
(d)when both the above impurities are present simultaneously given that:-
ni for Ge at 300o K is 2.5x1013 /cm3 &µn and µp for Ge are 3800 and 1800
cm2/v.s respectivily and the number of Ge atoms/cm3=4.4x1022.

10-An step graded Ge p-n junction has ND=500 NA &where NA corresponds


to 2 acceptor atoms/108 Ge atoms.calculate the contact potential at room
temperature,given that:-
no. of atoms=4.4x1022/cm3& ni =2.5x1013 /cm3.

You might also like