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2N5415

This document provides technical specifications for two PNP low power silicon transistor models: the 2N5415 and 2N5416. The maximum ratings include voltage and current limits as well as power dissipation and temperature ranges. Thermal characteristics and electrical characteristics such as cutoff currents, saturation voltages, and switching times are specified. The transistors are qualified to MIL-PRF-19500/485 standards and are available in different packages.

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0% found this document useful (1 vote)
58 views

2N5415

This document provides technical specifications for two PNP low power silicon transistor models: the 2N5415 and 2N5416. The maximum ratings include voltage and current limits as well as power dissipation and temperature ranges. Thermal characteristics and electrical characteristics such as cutoff currents, saturation voltages, and switching times are specified. The transistors are qualified to MIL-PRF-19500/485 standards and are available in different packages.

Uploaded by

bacon46
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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TECHNICAL DATA

PNP LOW POWER SILICON TRANSISTOR


Qualified per MIL-PRF-19500/485

Devices Qualified Level


JAN
2N5415 2N5416
JANTX
2N5415S 2N5416S
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N5415 2N5416 Units
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 200 350 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 1.0 Adc TO- 5*
Total Power Dissipation @ TA = +250C 0.75 W 2N5415, 2N5416
PT
@ TC = +250C 10 W
0
Operating & Storage Temperature Range Top, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RθJC 17.5 C/W
2N5415S, 2N5416S
1) Derate linearly 4.28 mW/0C for TA > +250C TO-39*
2) Derate linearly 57.1 mW/0C for TC > +250C
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc 2N5415 50 µAdc
VCE = 200 Vdc 2N5415 ICEO 1.0 mAdc
VCE = 250 Vdc 2N5416 50 µAdc
VCE = 300 Vdc 2N5416 1.0 mAdc
Emitter-Base Cutoff Current
IEBO µAdc
VEB = 6.0 Vdc 20
Collector-Emitter Cutoff Current
µAdc
VCE = 200 Vdc, VBE = 1.5 Vdc 2N5415 ICEX 50
µAdc
VCE = 300 Vdc, VBE = 1.5 Vdc 2N5416 50
Collector-Base Cutoff Current
VCB = 175 Vdc 2N5415 ICBO1 50 µAdc
VCB = 280 Vdc 2N5416 50
Collector-Base Cutoff Current
VCB = 200 Vdc 2N5415 ICBO2 500 µAdc
VCB = 350 Vdc 2N5416 500
6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N5415, 2N5416 JAN, SERIES

ELECTRICAL CHARACTERISTICS (con’t)


Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc hFE 30 120
IC = 1.0 mAdc, VCE = 10 Vdc 15
Collector-Emitter Saturation Voltage 2.0
VCE(sat) Vdc
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Voltage 1.5
VBE Vdc
IC = 50 mAdc, VCE = 10 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit Forward
Current Transfer Ratio
hfe 3.0 15
IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
hfe 25
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
Cobo 15 pF
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
Cibo 75 pF
VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
µs
t
on 1.0
VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc
Turn-Off Time
µs
t
off 10
VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc
SAFE OPERATING AREA
DC Tests
TC = +250C; 1 Cycle; t = 0.4 s
Test 1
VCE = 10 Vdc, IC = 1.0 Adc
Test 2
VCE = 100 Vdc, IC = 100 mAdc
Test 3
VCE = 200 Vdc, IC = 24 mAdc 2N5415
Test 4
VCE = 300 Vdc, IC = 10 mAdc 2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

6 Lake Street, Lawrence, MA 01841 120101


1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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